A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 200 mA
35 V
BV
CES
I
C
= 200 mA
65
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CBO
V
CB
= 30 V
1.0
mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
5.0
---
---
C
OB
V
CB
= 30 V
f = 1.0 MHz
45
65
pF
G
P
C
V
CE
= 28 V
P
OUT
= 40 W f = 175 MHz
V
CE
= 10 V I
C
= 200 mA f = 100 MHz
7.6
8.1
60
---
dB
%
NPN SILICON RF POWER TRANSISTOR
2N5643
DESCRIPTION:
The
ASI 2N5643
is Designed for
wideband large-signal amplifier stages
in the 125 175 MHz range.
FEATURES:
Minimum Gain = 7.6 dB
Output Power = 40 W
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
5.0 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
60 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +200 C
JC
2.9 C/W
PACKAGE STYLE .380 4L STUD
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45
G
H
J
I
A
#8-32 UNC-2A
E
E
C
B
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