A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
A
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CER
I
C
= 5.0 mA R
BE
= 10
55
V
BV
EBO
I
E
= 100
A
3.0
V
I
CES
V
CE
= 50 V
V
CE
= 15 V T
C
= +150
O
C
1.0
10.0
A
mA
I
CEO
V
CE
= 15 V
20
A
f
t
V
CE
= 15 V I
C
= 50 mA f = 200 MHz
1200
MHz
C
OB
V
CB
= 30 V f = 1.0 MHz
3.0
pF
G
PE
C
V
CC
= 28 V P
OUT
= 1.0 W f = 200 MHz
5.0
35
dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N5108
DESCRIPTION:
The
2N5108
is a Designed for
General Purpose Class C Amplifier
Applications Up to 1 GHz.
FEATURES:
G
PE
= 6.0 dB Typ. at 1.0 GHz
F
T
= 1,500 MHz Typ. at 15 V/ 50 mA
Hermetic TO-39 Package
MAXIMUM RATINGS
I
C
400 mA
V
CB
55 V
V
CE
30 V
P
DISS
3.5 W @ T
C
= 25
O
C
T
J
-65 to +200
O
C
T
STG
-65 to +200
O
C
JC
50
O
C/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
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