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Электронный компонент: 1N4387

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
V
BR
I
R
= 10
A
150
V
C
T
V
R
= 6.0 V
f = 1.0 MHz
35
pF
Q
V
R
= 6.0 V
f = 50 MHz
200
---
f
in
150
MHz
P
OUT(x3)
P
IN
= 30 W F
IN
= 150 MHz
15
30
W
SILICON MULTIPLIER VARACTOR DIODE
1N4387
DESCRIPTION:
The
1N4387
is a High Power Silicon
Multiplier Varactor Diode
.
MAXIMUM RATINGS
I
O
200 mA
V
R
150 V
P
DISS
20 W @ T
C
= 25
O
C
T
J
-65
O
C to +150
O
C
T
STG
-65
O
C to +175
O
C



JC
5.0
O
C/W
PACKAGE STYLE DO- 4
1 = Anode
2 = Cathode