Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
78
110
106
150
R
JL
64
80
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
12
Gate-Source Voltage
Drain-Source Voltage
-30
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-1.8
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.15
0.73
-55 to 150
T
A
=70C
I
D
-2.3
AO6801
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -2.3 A (V
GS
= -10V)
R
DS(ON)
< 135m
(V
GS
= -10V)
R
DS(ON)
< 185m
(V
GS
= -4.5V)
R
DS(ON)
< 265m
(V
GS
= -2.5V)
General Description
The AO6801 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO6801 is Pb-free
(meets ROHS & Sony 259 specifications). AO6801L
is a Green Product ordering option. AO6801 and
AO6801L are electrically identical.
G1
D1
S1
G2
D2
S2
TSOP6
Top View
G2
S2
G1
D2
S1
D1
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.
AO6801
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.6
-1
-1.4
V
I
D(ON)
-20
A
107
135
T
J
=125C
154
190
135
185
m
195
265
m
g
FS
8
S
V
SD
-0.85
-1
V
I
S
-1.35
A
C
iss
409
pF
C
oss
55
pF
C
rss
42
pF
R
g
12
Q
g
4.9
nC
Q
gs
0.6
nC
Q
gd
1.6
nC
t
D(on)
6.9
ns
t
r
3.3
ns
t
D(off)
38.5
ns
t
f
13.2
ns
t
rr
15
ns
Q
rr
8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-2.0A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-2.5V, I
D
=-1A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2.3A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
V
GS
=-4.5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2.3A
I
F
=-2.0A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-15V, I
D
=-2.0A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=7.5
,
R
GEN
=3
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 2 : June 2005
Alpha & Omega Semiconductor, Ltd.
AO6801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3.5V
-2.5V
-2V
-4.5V
-10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
50
75
100
125
150
175
200
225
250
0
1
2
3
4
5
6
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
No
rmal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=-4.5V, V
GS
=-10V
V
GS
=-2.5V
0
50
100
150
200
250
300
350
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-2A
25C
125C
I
D
=-2A
-4V
V
GS
=-2.5V
-5V
-3V
Alpha & Omega Semiconductor, Ltd.
AO6801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Vo
l
ts
)
0
100
200
300
400
500
600
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
aci
t
a
n
ce (
p
F
)
C
iss
0
5
10
15
20
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r
(W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rmal
i
z
ed
T
r
an
si
en
t
T
h
e
rmal
Resi
st
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-2.0A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=110C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
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