Symbol
Units
V
DS
V
V
GS
V
T
A
=25C
T
A
=70C
I
DM
V
KA
V
T
A
=25C
T
A
=70C
I
FM
T
A
=25C
T
A
=70C
T
J
, T
STG
C
Symbol
Units
R
JL
R
JL
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
MOSFET
Schottky
Drain-Source Voltage
20
Gate-Source Voltage
8
Continuous Drain Current
A
I
D
3.8
A
3
Pulsed Drain Current
B
10
Schottky reverse voltage
20
Continuous Forward Current
A
I
F
2
A
1
Pulsed Forward Current
B
10
W
0.7
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.15
0.92
Parameter: Thermal Characteristics MOSFET
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
80.3
110
C/W
Maximum Junction-to-Ambient
A
Steady-State
117
150
Maximum Junction-to-Lead
C
Steady-State
43
80
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
t 10s
R
JA
109.4
135
C/W
Maximum Junction-to-Ambient
A
Steady-State
136.5
175
Maximum Junction-to-Lead
C
Steady-State
58.5
80
AO6702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 20V
I
D
= 3.8A (V
GS
= 4.5V)
R
DS(ON)
< 50m
(V
GS
= 4.5V)
R
DS(ON)
< 65m
(V
GS
= 2.5V)
R
DS(ON)
< 95m
(V
GS
= 1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO6702 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6702 is Pb-free (meets ROHS & Sony
259 specifications). AO6702L is a Green Product ordering
option. AO6702 and AO6702L are electrically identical.
TSOP6
A
K
G
D
S
G
S
A
D
N/C
K
1
2
3
6
5
4
AO6702
Symbol
Min
Typ
Max
Units
BV
DSS
20
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.4
0.6
1
V
I
D(ON)
10
A
41.6
50
T
J
=125C
63
80
54
65
m
74
95
m
g
FS
10.5
S
V
SD
0.8
1
V
I
S
1.8
A
C
iss
449
pF
C
oss
74
pF
C
rss
51.6
pF
R
g
4.9
Q
g
5.9
nC
Q
gs
0.36
nC
Q
gd
1.3
nC
t
D(on)
4.5
ns
t
r
6
ns
t
D(off)
32.7
ns
t
f
7.1
ns
t
rr
13
ns
Q
rr
3.3
nC
SCHOTTKY PARAMETERS
V
F
0.39
0.5
V
0.02
20
C
T
34
pF
t
rr
5.2
10
ns
Q
rr
0.8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
SchottkyReverse Recovery Time
I
F
=1A, dI/dt=100A/
s
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
s
I
F
=3.8A, dI/dt=100A/
s
I
F
=3.8A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=16V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=8V
R
DS(ON)
Static Drain-Source On-Resistance
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=3.8A
m
V
GS
=2.5V, I
D
=3.3A
V
GS
=1.8V, I
D
=2.8A
Forward Transconductance
V
DS
=5V, I
D
=3.8A
Input Capacitance
V
GS
=5V, V
DS
=10V, R
L
=2.6
,
R
GEN
=0
Gate Drain Charge
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Reverse Transfer Capacitance
Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Turn-On DelayTime
Forward Voltage Drop
I
F
=0.5A
I
rm
Maximum reverse leakage current
V
R
=16V
mA
V
R
=16V, T
J
=125C
Junction Capacitance
V
R
=10V
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
V
GS
=4.5V, V
DS
=10V, I
D
=3.8A
V
GS
=0V, V
DS
=10V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev3: August 2005
Alpha & Omega Semiconductor, Ltd.
AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
4
8
12
16
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
I
D
(A)
V
GS
=1.5V
V
GS
=2.0V
8V
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
25C
125C
V
GS
=5V
30
40
50
60
70
80
90
0
2
4
6
8
10
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS(
O
N)
(m
)
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
m
a
l
i
z
e O
N
-
R
esi
st
an
ce
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
I
D
=3.8A
30
40
50
60
70
80
90
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(
O
N)
(m
)
25C
125C
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25C
125C
V
GS
=1.0V
Alpha & Omega Semiconductor, Ltd.
AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
o
l
t
s)
V
DS
=4.5V
I
D
=3.8A
0
100
200
300
400
500
600
700
800
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
aci
t
a
n
ce (
p
F
)
C
iss
C
rss
C
oss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
I
D
(A)
T
J(Max)
=150C
T
A
=25C
R
DS(ON)
limited
0
2
4
6
8
10
12
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
wer
(
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Z
JA
N
o
r
m
a
l
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
a
l
R
esi
st
an
ce
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=110C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
10
s
100
s
1ms
10ms
0.1s
1s
DC
10s
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
I
F
(Am
p
s
)
0
20
40
60
80
100
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
C
a
p
aci
t
a
n
ce (
p
F
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
0
25
50
75
100
125
150
Temperature (C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
L
eakag
e C
u
r
r
e
n
t
(
A
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
l
i
z
ed
T
r
an
si
en
t
T
h
e
r
m
a
l
R
esi
st
an
ce
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
Temperature (C)
V
F
(V
o
l
ts
)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=135C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
f = 1MHz
I
F
=0.5A
25C
V
R
=16V
125C
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.
PDF 
ZIP