Symbol
Max Q2
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
V
DS
I
FM
T
J
, T
STG
Gate-Source Voltage
12
30
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Drain-Source Voltage
W
-55 to 150
-55 to 150
Junction and Storage Temperature Range
2
1.28
1.28
T
A
=25C
T
A
=70C
2
A
6.4
40
30
7
6.8
T
A
=25C
T
A
=70C
Power Dissipation
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
Maximum Schottky
Max Q1
30
20
8.5
Units
30
V
T
A
=25C
Parameter
Reverse Voltage
A
2.2
20
3
T
A
=70C
Pulsed Diode Forward Current
B
Continuous Forward
Current
A
P
D
I
F
T
A
=25C
T
A
=70C
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
C
2
AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A I
D
=7A (V
GS
= 10V)
R
DS(ON)
< 17m
<26m
(V
GS
= 10V)
R
DS(ON)
< 25m
<31m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4912 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS &
Sony 259 specifications). AO4912L is a Green Product
ordering option. AO4912 and AO4912L are electrically
identical.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
AO4912
Symbol
Units
R
JL
Symbol
Units
R
JL
R
JL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Junction-to-Lead
C
Steady-State
71
32
47.5
R
JA
62.5
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
Steady-State
110
110
Maximum Junction-to-Lead
C
Steady-State
35
Typ
Maximum Junction-to-Ambient
A
Steady-State
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
t 10s
40
Thermal Characteristics Schottky
62.5
40
48
74
62.5
C/W
Maximum Junction-to-Ambient
A
Steady-State
Max
C/W
C/W
Parameter: Thermal Characteristics MOSFET Q2
Typ
Max
Maximum Junction-to-Ambient
A
t 10s
R
JA
48
74
110
Maximum Junction-to-Lead
C
Steady-State
35
40
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 4: Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4912
Symbol
Min
Typ
Max Units
BV
DSS
30
V
0.003
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.5
2
V
I
D(ON)
25
A
20
26
T
J
=125C
31.6
38
24.3
31
m
g
FS
22
S
V
SD
0.78
1
V
I
S
3
A
C
iss
590
710
pF
C
oss
162
pF
C
rss
40
pF
R
g
0.45
0.6
Q
g
6.04
7.3
nC
Q
gs
1.46
nC
Q
gd
2.56
nC
t
D(on)
3.7
5.5
ns
t
r
3.5
5.5
ns
t
D(off)
14.9
22
ns
t
f
2.5
4
ns
t
rr
Body Diode Reverse Recovery time
I
F
=7A, dI/dt=100A/
s
21.2
26
ns
Q
rr
Body Diode Reverse Recovery charge I
F
=7A, dI/dt=100A/
s
14.2
21
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
V
GS
=4.5V, V
DS
=15V, I
D
=7.0A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=7A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=7.0A
m
V
GS
=4.5V, I
D
=6.0A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
A
Gate-Body leakage current
V
DS
=0V, V
GS
= 12V
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=24V, V
GS
=0V
Q2 Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev 4 : Aug 2005
Alpha & Omega Semiconductor, Ltd.
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=2.5V
3.5V
3V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
16
18
20
22
24
26
28
30
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
125C
0.8
1
1.2
1.4
1.6
1.8
0
50
100
150
200
Temperature (C)
Figure 4: On resistance vs. Junction Temperature
No
rm
aliz
ed
O
n
-
R
esist
an
ce
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=7A
25C
I
D
=7A
125C
25C
25C
125C
Alpha & Omega Semiconductor, Ltd.
AO4912
Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(V
ol
ts
)
0
250
500
750
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Cap
acit
a
n
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
No
rm
aliz
ed
T
r
an
sien
t
T
h
e
rm
al Resist
an
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
s
V
DS
=15V
I
D
=7A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
T
J(Max)
=150C, T
A
=25C
Alpha & Omega Semiconductor, Ltd.
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