Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Device
Typ
Max Units
n-ch
48
62.5 C/W
n-ch
74
110
C/W
R
JL
n-ch
35
40
C/W
p-ch
48
62.5 C/W
p-ch
74
110
C/W
R
JL
p-ch
35
40
C/W
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t 10s
R
JA
Maximum Junction-to-Ambient
A
30
-30
20
Drain-Source Voltage
20
Gate-Source Voltage
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
W
6.9
5.8
30
2
1.44
-4.2
-5
2
1.44
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
R
JA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t 10s
AO4604
Complementary Enhancement Mode Field Effect Transistor
Nov 2002
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A -5A
R
DS(ON)
R
DS(ON)
< 28m
(V
GS
=10V) < 52m
(V
GS
= 10V)
< 42m
(V
GS
=4.5V) < 87m
(V
GS
= 4.5V)
General Description
The AO4604 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in power inverters, and other applications.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
AO4
604
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
1
1.9
3
V
I
D(ON)
20
A
22.5
28
T
J
=125C
31.3
38
34.5
42
m
g
FS
10
15.4
S
V
SD
0.76
1
V
I
S
3
A
C
iss
680
pF
C
oss
102
pF
C
rss
77
pF
R
g
3
Q
g
(10V)
13.84
nC
Q
g
(4.5V)
6.74
nC
Q
gs
1.82
nC
Q
gd
3.2
nC
t
D(on)
4.6
ns
t
r
4.1
ns
t
D(off)
20.6
ns
t
f
5.2
ns
t
rr
16.5
ns
Q
rr
7.8
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=3
V
GS
=10V, V
DS
=15V, I
D
=6.9A
Gate Drain Charge
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=6.9A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6.9A
m
V
GS
=4.5V, I
D
=5.0A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
V
DS
=24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=20V
I
F
=6.9A, dI/dt=100A/
s
I
F
=6.9A, dI/dt=100A/
s
Electrical Characteristics (T
J
=25C unless otherwise noted)
: N-CHANNEL
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO
4604
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.8
-3
V
I
D(ON)
-
10 A
39
52
T
J
=125C
54
70
67
87
m
g
FS
6
8.6
S
V
SD
-0.77
-1
V
I
S
-2.8
A
C
iss
700
pF
C
oss
120
pF
C
rss
75
pF
R
g
10
Q
g
(10V)
14.7
nC
Q
g
(4.5V)
7.6
nC
Q
gs
2
nC
Q
gd
3.8
nC
t
D(on)
8.3
ns
t
r
5
ns
t
D(off)
29
ns
t
f
14
ns
t
rr
23.5
ns
Q
rr
13.4
nC
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-5A
m
V
GS
=-4.5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-5A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
: P-CHANNEL
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=5.0A
Reverse Transfer Capacitance
I
F
=-5A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4
604
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
DS
(
O
N)
(m
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
Am
p
s
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
0
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction Temperature
N
o
r
mal
i
z
ed
O
n
-
R
esi
st
an
ce
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
125C
25C
25C
I
D
=5A
5V
6V
Alpha & Omega Semiconductor, Ltd.
AO
4604
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(Vo
l
ts
)
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
ap
aci
t
an
ce (
p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Pow
e
r
W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
mal
i
z
ed
T
r
an
si
en
t
T
h
er
mal
R
esi
st
an
ce
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
(Volts)
I
D
(Am
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=6.9A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
10
s
Alpha & Omega Semiconductor, Ltd.
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