Symbol
Max p-channel
Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
C
Symbol
Typ
Max
48
62.5
74
110
R
JL
35
40
-30
12
Gate-Source Voltage
A
Continuous Drain
Current
A
T
A
=25C
I
D
T
A
=70C
Pulsed Drain Current
B
W
6.9
5.8
40
2
1.44
-4.2
-5
2
1.44
Absolute Maximum Ratings T
A
=25C unless otherwise noted
Parameter
Max n-channel
30
-30
12
Drain-Source Voltage
T
A
=70C
Power Dissipation
T
A
=25C
P
D
Steady-State
C/W
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Steady-State
C/W
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
AO4600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.9A
(V
GS
= 10V)
-5A
(V
GS
=
-
10V)
R
DS(ON)
< 27m
< 49m (V
GS
=
-
10V)
< 32m
< 64m (V
GS
=
-
4.5V)
< 50m
< 120m (V
GS
=
-
2.5V)
General Description
The AO4600 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO4600 is Pb-free (meets ROHS
& Sony 259 specifications). AO4600L is a Green
Product ordering option. AO4600 and AO4600L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
AO4600
Symbol
Min
Typ
Max
Units
BV
DSS
30
V
1
T
J
=55C
5
I
GSS
100
nA
V
GS(th)
0.7
1
1.4
V
I
D(ON)
25
A
22.6
27
T
J
=125C
33
40
27
32
m
42
50
m
g
FS
12
16
S
V
SD
0.71
1
V
I
S
3
A
C
iss
858
1050
pF
C
oss
110
pF
C
rss
80
pF
R
g
1.24
4
Q
g
9.6
12
nC
Q
gs
1.65
nC
Q
gd
3
nC
t
D(on)
5.7
ns
t
r
13
ns
t
D(off)
37
ns
t
f
4.2
ns
t
rr
Body Diode Reverse Recovery time
15.5
20
ns
Q
rr
Body Diode Reverse Recovery charge
7.9
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=4.5V, V
DS
=15V, I
D
=6.9A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, R
L
=2.2
,
R
GEN
=6
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
V
DS
=5V, I
D
=5A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6.9A
m
V
GS
=4.5V, I
D
=6.0A
V
GS
=2.5V, I
D
=5A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
On state drain current
V
GS
=4.5V, V
DS
=5V
V
DS
=24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
I
F
=5A, dI/dt=100A/
s
I
F
=5A, dI/dt=100A/
s
n-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA curve
provides a single pulse rating.
Rev 4 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A
)
V
GS
=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A
)
10
20
30
40
50
60
0
5
10
15
20
I
D
(Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
SD
(Volts)
Figure 6: Body diode characteristics
I
S
Am
p
s
125C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature ( C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
aliz
ed
On
-R
esistan
ce
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
70
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
25C
125C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=10V
I
D
=5A
125C
25C
25C
I
D
=5A
Alpha & Omega Semiconductor, Ltd.
AO4600
TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge characteristics
V
GS
(V
ol
ts)
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
acitan
ce (p
F
)
C
iss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r W
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=15V
I
D
=6.9A
Single Pulse
D=T
on
/
T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=62.5C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
f=1MHz
V
GS
=0V
Alpha & Omega Semiconductor, Ltd.
AO4600
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-0.7
-1
-1.4
V
I
D(ON)
-25
A
42.5
49
T
J
=125C
74
54
64
m
80
120
m
g
FS
7
11
S
V
SD
-0.75
-1
V
I
S
-3
A
C
iss
952
1200
pF
C
oss
103
pF
C
rss
77
pF
R
g
5.9
30
Q
g
9.5
12
nC
Q
gs
2
nC
Q
gd
3.1
nC
t
D(on)
12
ns
t
r
4
ns
t
D(off)
37
ns
t
f
12
ns
t
rr
21
26
ns
Q
rr
13
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
.
p-channel MOSFET Electrical Characteristics (T
J
=25C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
I
D
=-250
A, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-24V, V
GS
=0V
A
Gate-Body leakage current
V
DS
=0V, V
GS
=12V
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
On state drain current
V
GS
=-4.5V, V
DS
=-5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-5A
m
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
Forward Transconductance
V
DS
=-5V, I
D
=-5A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=-5A, dI/dt=100A/
s
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
Alpha & Omega Semiconductor, Ltd.
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