Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
31
40
63
75
R
JL
21
30
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
8
Gate-Source Voltage
Drain-Source Voltage
-12
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-9
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
-11
AO4437
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -12V
I
D
= -11 A (V
GS
= -4.5V)
R
DS(ON)
< 16m
(V
GS
= -4.5V)
R
DS(ON)
< 20m
(V
GS
= -2.5V)
R
DS(ON)
< 25m
(V
GS
= -1.8V)
ESD Rating: 4KV HBM
General Description
The AO4437 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product
AO4437 is Pb-free (meets ROHS & Sony
259 specifications). AO4437L is a Green Product ordering
option. AO4437 and AO4437L are electrically identical.
D
S
G
G
S
S
S
D
D
D
D
SOIC-8
Top View
Alpha & Omega Semiconductor, Ltd.
AO4437
Symbol
Min
Typ
Max
Units
BV
DSS
-12
V
-1
T
J
=55C
-5
1
A
10
A
V
GS(th)
-0.3
-0.55
-1
I
D(ON)
-20
A
12.4
16
T
J
=125C
17
21
15.9
20
m
20.4
25
m
g
FS
38
S
V
SD
-0.74
-1
V
I
S
-4.5
A
C
iss
3960
4750
pF
C
oss
910
pF
C
rss
757
pF
R
g
6.9
8.5
Q
g
37
47
nC
Q
gs
4.5
nC
Q
gd
11
nC
t
D(on)
15
ns
t
r
43
ns
t
D(off)
158
ns
t
f
95
ns
t
rr
64
ns
Q
rr
50
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-11A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-1.8V, I
D
=-6A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-11A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-9.6V, V
GS
=0V
V
DS
=0V, V
GS
=8V
Zero Gate Voltage Drain Current
V
DS
=0V, V
GS
=4.5V
I
GSS
m
V
GS
=-2.5V, I
D
=-10A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-11A
I
F
=-11A, dI/dt=100A/
s
V
GS
=0V, V
DS
=-6V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-6V, I
D
=-11A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off Delay Time
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.55
,
R
GEN
=3
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On Delay Time
DYNAMIC PARAMETERS
Gate-Body leakage current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
AO4437
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
10
15
20
25
30
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1.0
1.2
1.4
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
lized
On
-
R
esist
a
n
c
e
I
D
=-6A, V
GS
=-1.8V
I
D
=-10A, V
GS
=-2.5V
I
D
=-11A, V
GS
=-4.5V
0
5
10
15
20
25
30
35
40
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-11A
25C
125C
25C
125C
V
DS
=-5V
V
GS
=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-1.0V
-1.5V
-2.0V
-8.0V
Alpha & Omega Semiconductor, Ltd.
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