Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
65
90
85
125
R
JL
43
60
W
Maximum Junction-to-Lead
C
Steady-State
C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
C/W
Maximum Junction-to-Ambient
A
Steady-State
C/W
20
Gate-Source Voltage
Drain-Source Voltage
-30
Continuous Drain
Current
A
Maximum
Units
Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V
-3.5
-20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Junction and Storage Temperature Range
A
P
D
C
1.4
1
-55 to 150
T
A
=70C
I
D
-4.1
AO3407
P-Channel Enhancement Mode Field Effect Transistor
Aug 2002
Features
V
DS
(V) = -30V
I
D
= -4.1 A
R
DS(ON)
< 52m
(V
GS
= -10V)
R
DS(ON)
< 87m
(V
GS
= -4.5V)
General Description
The AO3407 uses advanced trench technology to
provide excellent R
DS(ON)
with
low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
S
G
D
TO-236
(SOT-23)
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
AO3407
Symbol
Min
Typ
Max
Units
BV
DSS
-30
V
-1
T
J
=55C
-5
I
GSS
100
nA
V
GS(th)
-1
-1.8
-3
V
I
D(ON)
-10
A
40.5
52
T
J
=125C
57
73
64
87
m
g
FS
5.5
8.2
S
V
SD
-0.77
-1
V
I
S
-2.2
A
C
iss
700
pF
C
oss
120
pF
C
rss
75
pF
R
g
10
Q
g
14.3
nC
Q
g
7
nC
Q
gs
3.1
nC
Q
gd
3
nC
t
D(on)
8.6
ns
t
r
5
ns
t
D(off)
28.2
ns
t
f
13.5
ns
t
rr
27
ns
Q
rr
15
nC
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=3.6
,
R
GEN
=3
Turn-Off Fall Time
Turn-On DelayTime
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
m
V
GS
=-4.5V, I
D
=-3A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-4A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-4A, dI/dt=100A/
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
A, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-4.1A
Reverse Transfer Capacitance
I
F
=-4A, dI/dt=100A/
s
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
0.00
1.00
2.00
3.00
4.00
5.00
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-I
D
(A
)
V
GS
=-3V
-3.5V
-4V
-10V
-4.5V
-5V
0
2
4
6
8
10
0
1
2
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
25C
125C
V
DS
=-5V
20
40
60
80
100
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS
(
O
N)
(m
)
V
GS
=-4.5V
V
GS
=-10V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25C
125C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
liz
ed
On
-R
esistan
ce
V
GS
=-10V
V
GS
=-4.5V
20
40
60
80
100
120
140
160
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS
(
O
N)
(m
)
I
D
=-2A
25C
125C
I
D
=-2A
Alpha and Omega Semiconductor, Ltd.
AO3407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0
4
8
12
16
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(V
ol
ts)
0
200
400
600
800
1000
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
pa
c
i
ta
nc
e
(pF)
C
iss
C
oss
C
rss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Po
w
e
r (
W
)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
JA
N
o
r
m
a
liz
ed
T
r
an
sien
t
T
h
er
m
al R
esistan
ce
0.1
1
10
100
0.1
1
10
100
-V
DS
(Volts)
-I
D
(A
m
p
s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-4A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=90C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10
s
Alpha & Omega Semiconductor, Ltd.
SYMBOLS
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
0.50
0.40
b
0.35
5
8
1
1
0.95 BSC
E1
1.40
---
E
L
e
2.60
0.40
D
C
2.80
0.10
1.80
---
1.60
2.80
---
2.95
0.60
2.90
0.15
3.04
0.25
DIMENSIONS IN MILLIMETERS
MIN
A1
A2
A
0.00
1.00
1.00
MAX
NOM
---
1.10
0.10
1.15
1.25
---
SEATING PLANE
GAUGE PLANE
e1
---
1.90 BSC
---
SOT-23 Package Data
RECOMMENDATION OF LAND PATTERN
P N D L N
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
CODE
AO3407
A7
PART NO.
SOT-23 PART NO. CODE
PACKAGE MARKING DESCRIPTION
Rev. A
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