ChipFind - документация

Электронный компонент: APW7065KE-TU

Скачать:  PDF   ZIP
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Synchronous Buck PWM Controller
Single 12V Power Supply Required
Fast Transient Response
- 0~90% Duty Ratio
0.8V Reference with 1% Accuracy
Shutdown Function by Controlling
COMP Pin Voltage
Internal Soft-Start (3.4ms) Function
Voltage Mode PWM Control Design
Under-Voltage Protection
Over-Current Protection
- Sense Low Side MOSFET's R
DS(ON)
300KHz Fixed Switching Frequency
SOP-8 Package
Lead Free Available (RoHS Compliant)
Features
Applications
General Description
The APW7065 uses fixed 300KHz switching frequency,
voltage mode, synchronous PWM controller which
drives dual N-channel MOSFETs. The device integrates
the control, monitoring and protection functions into a
single package, provides one controlled power output
with under-voltage and over-current protections.
The APW7065 provides excellent regulation for output
load variation. The internal 0.8V temperature-
compensated reference voltage is designed to meet
the requirement of low output voltage applications. An
built-in digital soft-start with fixed soft-start interval
prevents the output voltage from overshoot as well as
limiting the input current.
The APW7065 with excellent protection functions:
POR, OCP and UVP. The Power-On Reset (POR)
circuit can monitor VCC supply voltage exceeds its
threshold voltage while the controller is running, and a
built-in digital soft-start provides output with controlled
voltage rise. The Over-Current Protection (OCP)
monitors the output current by using the voltage drop
across the lower MOSFET's R
DS(ON)
, comparing with
internal V
OCP
(0.27V), when the output current reaches
the trip point, the controller will run the soft-start
function until the fault events are removed. The Under-
Voltage Protection (UVP) monitors the voltage of FB
pin for short-circuit protection, when the V
FB
is less
than 50% of V
REF
(0.4V), the controller will shutdown
the IC directly.
Pinouts
SOP-8
Graphics Card
Mother Board
1
2
3
4
8
7
6
5
PHASE
COMP
FB
VCC
BOOT
UGATE
GND
LGATE
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
2
APW 7065
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Ambient Temp. Range
E : -20 to 70 C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APW7065 K :
APW7065
XXXXX
XXXXX - Date Code
Lead Free Code
Ordering and Marking Information
Block Diagram
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
Gate Control
Oscillator
Digital
Soft Start
Power-On
Reset
PHASE
LGATE
FB
GND
VCC
BOOT
UGATE
50%V
REF
Error Amp
PWM
Comparator
U.V.P
Comparator
Sawtooth
Wave
:
2
COMP
0.27V
O.C.P
Comparator
V
REF
F
OSC
300KHz
Sense Low Side
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
3
Application Circuit
Symbol
Parameter
Rating
Unit
VCC
VCC to GND
-0.3 ~ 16
V
BOOT
BOOT to PHASE
-0.3 ~ 16
V
UGATE
UGATE to PHASE
<400nS pulse width
>400nS pulse width
-5 ~ BOOT+5
-0.3 ~ BOOT+0.3
V
LGATE
LGATE to GND
<400nS pulse width
>400nS pulse width
-5 ~ VCC+5
-0.3 ~ VCC+0.3
V
PHASE
PHASE to GND
<400nS pulse width
>400nS pulse width
-5 ~ 21
-0.3 ~ 16
V
COMP, FB
COMP, FB to GND
-0.3 ~ 7
V
T
J
Junction Temperature Range
-20 ~ 150
o
C
T
STG
Storage Temperature
-65 ~ 150
o
C
T
SDR
Maximum Soldering Temperature, 10 Seconds
300
o
C
V
ESD
Minimum ESD Rating (Human Body Mode) (Note 2)
2
kV
Absolute Maximum Ratings
V
OUT
470uFx2
VCC
BOOT
UGATE
PHASE
LGATE
GND
FB
12V
V
IN
COMP
0.1uF
APM2509
APM2506
1uF
1uF
1uH
470uF
1uH
470uFx2
2K
1K
18R
68nF
8.2nF
33nF
2.7K
1
2
3
4
5
6
7
8
2.2R
1N4148
2N7002
(12V)
(1.2V)
ON/OFF
Q1
Q2
Q3
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 2: The device is ESD sensitive. Handling precautions are recommended.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
4
Symbol
Parameter
Range
Unit
VCC
VCC Supply Voltage
10.8 ~ 13.2
V
V
OUT
Converter Output Voltage
0.8 ~ 5
V
V
IN
Converter Input Voltage
2.9 ~ 13.2
V
I
OUT
Converter Output Current
0 ~ 20
A
T
A
Ambient Temperature Range
-20 ~ 70
o
C
T
J
Junction Temperature Range
-20 ~ 125
o
C
Recommended Operating Conditions
Electrical Characteristics
Unless otherswise specified, these specifications apply over VCC=12V, and T
A
=-20~70
o
C. Typlcal values are at
T
A
=25
o
C.
APW7065
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SUPPLY CURRENT
I
VCC
VCC Nominal Supply Current
UGATE and LGATE Open
5
10
mA
VCC Shutdown Supply Current UGATE, LGATE = GND
1
2
mA
POWER-ON RESET
Rising VCC Threshold
9
9.5
10
V
Falling VCC Threshold
7.5
8
8.5
V
COMP Shutdown Threshold
1.2
V
COMP Shutdown Hysteresis
0.1
V
OSCILLATOR
F
OSC
Free Running Frequency
255
300
345
kHz
V
OSC
Ramp Amplitude
1.6
V
P-P
REFERENCE VOLTAGE
V
REF
Reference Voltage
Measured at FB Pin
0.8
V
Accuracy
T
A
=-20~70
C
-1.0
+1.0
%
ERROR AMPLIFIER
Gain Open Loop Gain
R
L
=10k, C
L
=10pF(Note3)
88
dB
GBWP Open Loop Bandwidth
R
L
=10k, C
L
=10pF(Note3)
15
MHz
SR
Slew Rate
R
L
=10k, C
L
=10pF(Note3)
6
V/us
FB Input Current
V
FB
= 0.8V(Note3)
0.1
1
uA
V
COMP
COMP High Voltage
5.5
V
V
COMP
COMP Low Voltage
0
V
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
5
APW7065
Symbol
Parameter
Test Conditions
Min Typ Max
Unit
ERROR AMPLIFIER (Cont.)
I
COMP
COMP Source Current
V
COMP
=2V
5
mA
I
COMP
COMP Sink Current
V
COMP
=2V
5
mA
GATE DRIVERS
I
UGATE
Upper Gate Source Current
BOOT = 12V, V
UGATE
-V
PHASE
= 2V
2.6
A
I
UGATE
Upper Gate Sink Current
BOOT = 12V, V
UGATE
-V
PHASE
= 2V
1.05
A
I
LGATE
Lower Gate Source Current
VCC = 12V, V
LGATE
= 2V
4.9
A
I
LGATE
Lower Gate Sink Current
VCC = 12V, V
LGATE
= 2V
1.4
A
R
UGATE
Upper Gate Source Impedance BOOT = 12V, I
UGATE
= 0.1A
2
3
R
UGATE
Upper Gate Sink Impedance
BOOT = 12V, I
UGATE
= 0.1A
1.6
2.4
R
LGATE
Lower Gate Source Impedance VCC = 12V, I
LGATE
= 0.1A
1.3 1.95
R
LGATE
Lower Gate Sink Impedance
VCC = 12V, I
LGATE
= 0.1A
1.25 1.88
T
D
Dead Time
20
nS
PROTECTIONS
V
OCP
Over-Current Reference Voltage T
A
=-20~70
C
0.23 0.27 0.31
V
V
UVP
Under-Voltage Threshold
Trip Point
Percent of V
REF
45
50
55
%
SOFT-START
T
SS
Soft-Start Interval
2
3.4
5
ms
Electrical Characteristics (Cont.)
Unless otherswise specified, these specifications apply over VCC=12V and T
A
=-20~70
o
C. Typlcal values are
at T
A
=25
o
C.
Functional Pin Description
BOOT (Pin 1)
A bootstrap circuit with a diode connected to VCC is
used to create a voltage suitable to drive a logic-level
N-channel MOSFET.
UGATE (Pin 2)
Connect this pin to the high-side N-channel MOSFET's
gate. This pin provides gate drive for the high-side
MOSFET.
GND (Pin 3)
The GND terminal provides return path for the IC's bias
current and the low-side MOSFET driver's pull-low
current. Connect the pin to the system ground via very
low impedance layout on PCBs.
LGATE (Pin 4)
Connect this pin to the low-side N-channel MOSFET's
gate. This pin provides gate drive for the low-side
MOSFET.
Note 3: Guaranteed by design.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
6
Functional Pin Description (Cont.)
VCC (Pin 5)
Connect this pin to a 12V supply voltage. This pin
provides bias supply for the control circuitry and the
low-side MOSFET driver. The voltage at this pin is
monitored for the Power-On Reset (POR) purpose. It
is recommended that a decoupling capacitor (1 to
10uF) be connected to GND for noise decoupling.
FB (Pin 6)
This pin is the inverting input of the internal error
amplifier. Connect this pin to the output (V
OUT
) of the
converter via an external resistor divider for closed-
loop operation. The output voltage set by the resistor
divider is determined using the following formula :
where R1 is the resistor connected from V
OUT
to FB ,
and R2 is the resistor connected from FB to GND. The
FB pin is also monitored for under voltage events.
COMP (Pin 7)
This pin is the output of PWM error amplifier. It is used
to set the compensation components. In addition, if
the pin is pulled below 1.2V, it will disable the device.
PHASE (Pin 8)
This pin is the return path for the upper gate driver.
Connect this pin to the upper MOSFET source. This
pin is also used to monitor the voltage drop across the
MOSFET for over-current protection.
Typical Characteristics
Power On
Power Off
CH1
CH2
CH3
CH1
CH2
CH3
CH4
CH4
+
=
R2
R1
1
0.8
V
OUT
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
CH1: VCC (5V/div)
CH2: V
FB
(1V/div)
CH3: Vo (1V/div)
CH4: Ug (20/Vdiv)
Time: 10ms/div
CH1: VCC (5V/div)
CH2: V
FB
(1V/div)
CH3: Vo (1V/div)
CH4: Ug (20/Vdiv)
Time: 10ms/div
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
7
Typical Characteristics (Cont.)
EN
Shutdown
UGATE Rising
UGATE Falling
CH1
CH2
CH3
CH1
CH2
CH3
CH1
CH2
CH3
CH1
CH2
CH3
CH4
CH4
CH1: Ug (20V/div)
CH2: Lg (5V/div)
CH3: Phase (10V/div)
Time: 50ns/div
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
Iout=5A
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
Iout=5A
CH1: V
COMP
(2V/div)
CH2: Vo (1V/div)
CH3: Ug (20V/div)
CH4: Lg (10Vdiv)
Time: 5ms/div
CH1: V
COMP
(2V/div)
CH2: Vo (1V/div)
CH3: Ug (20V/div)
CH4: Lg (10Vdiv)
Time: 20us/div
CH1: IL (10A/div)
CH2: Vo (1V/div)
CH3: Ug (20V/div)
CH4: Lg(10V/div)
Time: 100us/div
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
8
0
Typical Characteristics (Cont.)
Load Transient Response
Under Voltage Protection
Over Current Protection
Short Test
CH1
CH2
CH1
CH2
CH3
CH1
CH2
CH3
CH1
CH2
CH3
CH4
VCC=12V, Vin=12V
Vo=1.2V, L=4.7uH
CH4
CH1: IL (10A/div)
CH2: Vo (2V/div)
CH3: Ug (20V/div)
CH4: Lg (10V/div)
Time: 2ms/div
CH4
CH1: IL (10A/div)
CH2: Vo (2V/div)
CH3: Ug (20V/div)
CH4: Lg (10V/div)
Time: 5ms/div
CH1: IL (10A/div)
CH2: Vo (1V/div)
CH3: Ug (20V/div)
CH4: Lg (10V/div)
Time: 100us/div
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
CH1: Vo (500mV/div,AC)
CH2:Io (5A/div)
Time: 1ms/div
1
2
1
2
0A
10A
VCC=12V, Vin=12V,Vo=1.2V, L=1uH,
L_side: APM2023, Rds(on)=17m
VCC=12V, Vin=12V
Vo=1.2V, L=1uH
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
9
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
0.792
0.794
0.796
0.798
0.8
0.802
0.804
-40
-20
0
20
40
60
80
100
120
275
280
285
290
295
300
305
310
-40 -20
0
20
40
60
80 100 120
Typical Characteristics (Cont.)
Switching Frequency vs. Junction Temperature
Reference Voltage vs. Junction Temperature
Junction Temperature (
C )
Switching Frequency(KHz)
Junction Temperature (
C )
Reference Voltage(V)
UGATE Source Current vs. UGATE Voltage
UGATE Sink Current vs. UGATE Voltage
UGATE Voltage (V)
UGATE Source Current (A)
UGATE Voltage (V)
UGATE Sink Current (A)
VBOOT=12V
VBOOT=12V
VCC=12V
VCC=12V
PHASE=2V
PHASE=2V
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
10
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Functional Description
Power On Reset (POR)
The Power-On Reset (POR) function of APW7065
continually monitors the input supply voltage (VCC)
and the COMP pin. The supply voltage (VCC) must
exceed its rising POR threshold voltage. The POR
function initiates soft-start operation after VCC and
COMP voltages exceed their POR thresholds. For
operation with a single +12V power source, V
IN
and
VCC are equivalent and the +12V power source must
exceed the rising VCC threshold. The POR function
inhibits operation at disabled status (V
COMP
is less
than 1.2V). With both input supplies above their POR
thresholds, the device initiates a soft-start interval.
Soft-Start
The APW7065 has a built-in digital soft-start to con-
trol the output voltage rise and limit the current surge
during the start-up. In Figure 1, when VCC exceeds
rising POR threshold voltage, it will delay 2048/Fosc
Typical Characteristics (Cont.)
LGATE Source Current vs. LGATE Voltage
LGATE Sink Current vs. LGATE Voltage
LGATE Voltage (V)
LGATE Source Current (A)
LGATE Sink Current (A)
LGATE Voltage (V)
VCC=12V
VCC=12V
Figure 2. shows more detail of the FB voltage ramp.
The FB voltage soft-start ramp is formed with many
small steps of voltage. The voltage of one step is about
12.5mV in FB, and the period of one step is about 16/
F
OSC
. This method provides a controlled voltage rise
ms
4
.
3
1024/F
t
t
T
OSC
2
3
start
soft
=
=
-
=
-
ms
8
.
6
/F
048
2
t
t
T
OSC
1
2
delay
=
=
-
=
seconds and then begin soft start. During soft-start,
an internal ramp connected to the one of the positive
inputs of the Gm amplifier rises up from 0V to 2V to
replace the reference voltage (0.8V) until the ramp
voltage reaches the reference voltage. The soft-start
interval is decided by the oscillator frequency
(300kHz). The formulation is given by:
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
11
Functional Description (Cont.)
Soft-Start (Cont.)
Figure 2.
Voltage(V)
FB
12.5mV
16/Fosc
Time
Over-Current Protection
The over-current protection monitors the output current
by using the voltage drop across the lower MOSFET's
R
DS(ON)
and this voltage drop will be compared with the
internal 0.27V reference voltage. If the voltage drop
across the lower MOSFET's R
DS(ON)
is larger than
0.27V, an over-current condition is detected. The
threshold of the over current limit is given by:
)
ON
(
DS
Limit
R
27
.
0
I
=
For the over-current is never occurred in the normal
operating load range; the variation of all parameters in
the above equation should be determined.
and prevents the large peak current to charge output
capacitor.
t
1
t
2
Voltage(V)
Time
VCC
V
OUT
t
3
- The MOSFET's R
DS(ON)
is varied by temperature and
gate to source voltage, the user should de-
termine the maximum R
DS(ON)
in manufacturer's
datasheet.
- The minimum Vocset should be used in the above
equation.
Application Information
Output Voltage Selection
The output voltage can be programmed with a resistive
divider. Use 1% or better resistors for the resistive
divider is recommended. The FB pin is the inverter
input of the error amplifier, and the reference voltage
is 0.8V. The output voltage is determined by:
Figure 1.
- Note that the I
LIMIT
is the current flow through the
lower MOSFET; I
LIMIT
must be greater than maxi-
mum output current add the half of inductor ripple
current.
Shutdown and Enable
Pulling the COMP voltage to GND by an open drain
transistor, shown in typical application circuit,
shutdown the APW7065 PWM controller. In shutdown
mode, the UGATE and LGATE turn off and pull to
PHASE and GND respectively.
Under Voltage Protection
The FB pin is monitored during converter operation by
the internal Under Voltage (UV) comparator. If the FB
voltage drops below 50% of the reference voltage (50%
of 0.8V = 0.4V), a fault signal is internally generated,
and the device turns off both high-side and low-side
MOSFET and the converter's output is latched to be
floating.


+
=
GND
OUT
OUT
R
R
1
0.8
V
Where R
OUT
is the resistor connected from V
OUT
to FB
and R
GND
is the resistor connected from FB to GND.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
12
Application Information (Cont.)
Output Inductor Selection
The inductor value determines the inductor ripple
current and affects the load transient response. Higher
inductor value reduces the inductor's ripple current and
induces lower output ripple voltage. The ripple current
and ripple voltage can be approximated by:
IN
OUT
S
OUT
IN
RIPPLE
V
V
L
F
V
V
I
-
=
ESR
I
V
RIPPLE
OUT
=
where F
S
is the switching frequency of the regulator.
Although increase of the inductor value reduces the
ripple current and voltage, a tradeoff will exist between
the inductor's ripple current and the regulator load
transient response time.
A smaller inductor will give the regulator a faster load
transient response at the expense of higher ripple
current. The maximum ripple current occurs at the
maximum input voltage. A good starting point is to
choose the ripple current to be approximately 30%
of the maximum output current. Once the inductance
value has been chosen, select an inductor that is ca-
pable of carrying the required peak current without
going into saturation. In some types of inductors, es-
pecially core that is made of ferrite, the ripple current
will increase abruptly when it saturates. This will re-
sult in a larger output ripple voltage.
Output Capacitor Selection
Higher capacitor value and lower ESR reduce the
output ripple and the load transient drop. Therefore,
selecting high performance low ESR capacitors is
intended for switching regulator applications. In some
applications, multiple capacitors have to be parallel to
achieve the desired ESR value. A small decoupling
capacitor in parallel for bypassing the noise is also
recommended, and the voltage rating of the output
capacitors also must be considered. If tantalum
capacitors are used, make sure they are surge tested
by the manufactures. If in doubt, consult the capacitors
manufacturer.
Input Capacitor Selection
The input capacitor is chosen based on the voltage
rating and the RMS current rating. For reliable
operation, select the capacitor voltage rating to be at
least 1.3 times higher than the maximum input voltage.
The maximum RMS current rating requirement is
approximately I
OUT
/2, where I
OUT
is the load current.
During power up, the input capacitors have to handle
large amount of surge current. If tantalum capacitors
are used, make sure they are surge tested by the
manufactures. If in doubt, consult the capacitors
manufacturer. For high frequency decoupling, a ceramic
capacitor 1uF can be connected between the drain of
upper MOSFET and the source of lower MOSFET.
MOSFET Selection
The selection of the N-channel power MOSFETs are
determined by the R
DS(ON)
, reverse transfer capacitance
(C
RSS
) and maximum output current requirement. There
are two components of loss in the MOSFETs:
conduction loss and transition loss. For the upper
and lower MOSFET, the losses are approximately
given by the following:
P
UPPER
= I
OUT
(1+ TC)(R
DS(ON)
)D + (0.5)( I
OUT
)(V
IN
)( t
SW
)F
S
P
LOWER
= I
OUT
(1+ TC)(R
DS(ON)
)(1-D)
Where I
OUT
is the load current
TC is the temperature dependency of R
DS(ON)
F
S
is the switching frequency
t
SW
is the switching interval
D is the duty cycle
Note that both MOSFETs have conduction loss while
the upper MOSFET include an additional transition
loss. The switching internal, t
SW
, is a function of the
reverse transfer capacitance C
RSS
. The (1+TC) term is
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
13
to factor in the temperature dependency of the R
DS(ON)
and can be extracted from the "R
DS(ON)
vs Temperature"
curve of the power MOSFET.
PWM Compensation
The output LC filter of a step down converter introduces
a double pole, which contributes with -40dB/decade
gain slope and 180 degrees phase shift in the control
loop. A compensation network among COMP, FB and
V
OUT
should be added. The compensation network is
shown in Fig. 6. The output LC filter consists of the
output inductor and output capacitors. The transfer
function of the LC filter is given by:
Application Information (Cont.)
MOSFET Selection (Cont.)
The poles and zero of this transfer functions are:
OUT
LC
C
L
2
1
F
=
OUT
ESR
C
ESR
2
1
F
=
The F
LC
is the double poles of the LC filter, and F
ESR
is
the zero introduced by the ESR of the output capacitor.
PHASE
L
OUTPUT
C
OUT
ESR
Figure 3. The Output LC Filter
F
LC
F
ESR
-40dB/dec
-20dB/dec
Frequency(Hz)
GAIN (dB)
The PWM modulator is shown in Figure 5. The input
is the output of the error amplifier and the output is the
PHASE node. The transfer function of the PWM
modulator is given by:
Figure 5. The PWM Modulator
Output of
Error Amplifier
V
OSC
PWM
Comparator
Driver
Driver
PHASE
V
IN
OSC
The compensation network is shown in Figure 6. It
provides a close loop transfer function with the highest
zero crossover frequency and sufficient phase margin.
The transfer function of error amplifier is given by:
+
+
=
=
sC3
1
R3
R1//
sC2
1
R2
//
sC1
1
V
V
GAIN
OUT
COMP
AMP
OSC
IN
PWM
V
V
GAIN
=
1
C
ESR
s
C
L
s
C
ESR
s
1
GAIN
OUT
OUT
2
OUT
LC
+
+
+
=
Figure 4. The LC Filter GAIN and Frequency
(
)
+
+
+


+
+
+
+
=
C3
R3
1
s
C2
C1
R2
C2
C1
s
s
C3
R3
R1
1
s
C2
R2
1
s
C1
R3
R1
R3
R1
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
14
The poles and zeros of the transfer function are:
C2
R2
2
1
F
Z1
=
(
)
C3
R3
R1
2
1
F
Z2
+
=
+
=
C2
C1
C2
C1
R2
2
1
F
P1
C3
R3
2
1
F
P2
=
Application Information (Cont.)
PWM Compensation (Cont.)
The closed loop gain of the converter can be written
as:
GAIN
LC
X GAIN
PWM
X GAIN
AMP
Figure 7. shows the asymptotic plot of the closed loop
converter gain, and the following guidelines will help
to design the compensation network. Using the below
guidelines should give a compensation similar to the
curve plotted. A stable closed loop has a -20dB/ decade
slope and a phase margin greater than 45 degree.
1.Choose a value for R1, usually between 1K and 5K.
2.Select the desired zero crossover frequency F
O
:
(1/5 ~ 1/10) X F
S
>F
O
>F
ESR
Use the following equation to calculate R2:
3.Place the first zero F
Z1
before the output LC filter
double pole frequency F
LC
.
F
Z1
= 0.75 X F
LC
0.75
F
R2
2
1
C2
LC
=
4.Set the pole at the ESR zero frequency F
ESR
:
F
P1
= F
ESR
Calculate the C1 by the equation:
1
F
C2
R2
2
C2
C1
ESR
-
=
5.Set the second pole F
P2
at the half of the switching
frequency and also set the second zero F
Z2
at the
output LC filter double pole F
LC
. The compensation
gain should not exceed the error amplifier open loop
gain, check the compensation gain at F
P2
with the
capabilities of the error amplifier.
F
P2
= 0.5 X F
O
F
Z2
= F
LC
Combine the two equations will get the following
component calculations:
R1
F
F
V
V
R2
LC
O
IN
OSC
=
1
F
2
F
R1
R3
LC
S
-
=
S
F
R3
1
C3
=
F
LC
Frequency(Hz)
G
A
I
N

(
d
B
)
20log
(R2/R1)
20log
(V
IN
/
V
OSC
)
F
Z1
F
Z2
F
P1
F
P2
F
ESR
PWM & Filter
Gain
Converter
Gain
Compensation
Gain
Figure 7. Converter Gain and Frequency
V
REF
V
OUT
V
COMP
R1
R3
C3
R2
C2
C1
FB
Figure 6. Compensation Network
Calculate the C2 by the equation:
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
15
Layout Considerations
In any high switching frequency converter, a correct
layout is important to ensure proper operation of the
regulator. With power devices switching at 300KHz,
the resulting current transient will cause voltage spike
across the interconnecting impedance and parasitic
circuit elements. As an example, consider the turn-off
transition of the PWM MOSFET. Before turn-off, the
MOSFET is carrying the full load current. During
turn-off, current stops flowing in the MOSFET and is
free-wheeling by the lower MOSFET and parasitic
diode. Any parasitic inductance of the circuit generates
a large voltage spike during the switching interval. In
general, using short, wide printed circuit traces
should minimize interconnecting impedances and
the magnitude of voltage spike. And signal and power
grounds are to be kept separate till combined using
ground plane construction or single point grounding.
Figure 8. illustrates the layout, with bold lines indicating
high current paths; these traces must be short and
wide. Components along the bold lines should be
placed lose together. Below is a checklist for your
layout:
- Keep the switching nodes (UGATE, LGATE and
PHASE) away from sensitive small signal nodes
since these nodes are fast moving signals.
Therefore, keep traces to these nodes as short as
possible.
- The traces from the gate drivers to the MOSFETs
(UG, LG) should be short and wide.
- Place the source of the high-side MOSFET and
the drain of the low-side MOSFET as close
possible. Minimizing the impedance with wide
layout plane between the two pads reduces the
voltage bounce of the node.
- Decoupling capacitor, compensation component,
Application Information (Cont.)
Figure 8.Layout Guidelines
the resistor dividers, and boot capacitors should
be close their pins. (For example, place the
decoupling ceramic capacitor near the drain of the
high-side MOSFET as close as possible. The bulk
capacitors are also placed near the drain).
- The input capacitor should be near the drain of
the upper MOSFET; the output capacitor should
be near the loads. The input capacitor GND should
be close to the output capacitor GND and the lower
MOSFET GND.
- The drain of the MOSFETs (V
IN
and PHASE
nodes) should be a large plane for heat sinking.
VCC
BOOT
PHASE
UGATE
LGATE
V
IN
V
OUT
L
O
A
D
APW7065
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
16
Package Information
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
1
0
8
0
8
SOP-8 pin (Reference JEDEC Registration MS-012)
H
E
e1
e2
0
.
0
1
5
X
4
5
D
A
A1
0.004max.
1
L
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
17
t 25 C to Peak
tp
Ramp-up
t
L
Ramp-down
ts
Preheat
Tsmax
Tsmin
T
L
T
P
25
Temperature
Time
Critical Zone
T
L
to T
P
Physical Specifications
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Classificatin Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(T
L
to T
P
)
3
C/second max.
3
C/second max.
Preheat
-
Temperature Min (Tsmin)
-
Temperature Max (Tsmax)
-
Time (min to max) (ts)
100
C
150
C
60-120 seconds
150
C
200
C
60-180 seconds
Time maintained above:
-
Temperature (T
L
)
-
Time (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5
C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6
C/second max.
6
C/second max.
Time 25
C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
18
Carrier Tape & Reel Dimensions
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245
C, 5 SEC
HOLT
MIL-STD-883D-1005.7
1000 Hrs Bias @125
C
PCT
JESD-22-B,A102
168 Hrs, 100
%
RH, 121
C
TST
MIL-STD-883D-1011.9
-65
C~150
C, 200 Cycles
ESD
MIL-STD-883D-3015.7
VHBM > 2KV, VMM > 200V
Latch-Up
JESD 78
10ms, 1
tr
> 100mA
Reliability Test Program
Table 1. SnPb Entectic Process Package Peak Reflow Temperature s
Package Thickness
Volume mm
3
<350
Volume mm
3
350
<2.5 mm
240 +0/-5
C
225 +0/-5
C
2.5 mm
225 +0/-5
C
225 +0/-5
C
Table 2. Pb-free Process Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350-2000
Volume mm
3
>2000
<1.6 mm
260 +0
C*
260 +0
C *
260 +0
C*
1.6 mm 2.5 mm
260 +0
C*
250 +0
C *
245 +0
C*
2.5 mm
250 +0
C*
245 +0
C *
245 +0
C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
C.
For example 260
C+0
C) at the rated MSL level.
Classification Reflow Profiles (Cont.)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2006
APW7065
www.anpec.com.tw
19
Customer Service
Reel Dimensions
Application
A
B
C
J
T1
T2
W
P
E
330
1 62 +1.5 12.75+ 0.15 2
0.5 12.4
0.2 2
0.2
12
0. 3 8
0.1 1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOP- 8
5.5
1 1.55 +0.1 1.55+ 0.25 4.0
0.1 2.0
0.1 6.4
0.1 5.2
0. 1 2.1
0.1 0.3
0.013
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP- 8
12
9.3
2500
A
J
B
T2
T1
C
Carrier Tape & Reel Dimensions (Cont.)
(mm)
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369