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Электронный компонент: APM9930C

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Dual Enhancement Mode MOSFET (N-and P-Channel)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9930/C
N-Channel
20V/15A, R
DS(ON)
=12m
(typ.) @ V
GS
=10V
R
DS(ON)
=17m
(typ.) @ V
GS
=4.5V
R
DS(ON)
=25m
(typ.) @ V
GS
=2.5V
P-Channel
-20V/-5A, R
DS(ON)
=60m
(typ.) @ V
GS
=-10V
R
DS(ON)
=72m
(typ.) @ V
GS
=-4.5V
R
DS(ON)
=98m
(typ.) @ V
GS
=-2.5V


Super High Dense Cell Design for Extremely
Low R
DS(ON)


Reliable and Rugged


SO-8 Package
Pin Description
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
SO-8
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D2
D2
D1
D1
G 1
S 1
D 1
D 1
APM9930/C
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
APM9930/C K :
APM9930/C
XXXXX
XXXXX - Date Code
N-Channel MOSFET
P-Channel MOSFET
G 2
S 2
D 2
D 2
APM9930
SO-8
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D
D
D
D
G 1
S 1
G 2
S 2
D
APM9930C
N- and P-Channel
MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
2
APM9930/C
APM9930/C
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
Static
N-Ch
20
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
P-Ch
-20
V
V
DS
=18V , V
GS
=0V
N-Ch
1
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=-18V , V
GS
=0V
P-Ch
-1
A
V
DS
=V
GS
, I
DS
=250
A
N-Ch
0.6
1.3
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=-250
A
P-Ch
-0.6
-1.3
V
V
GS
=
12V , V
DS
=0V
N-Ch
100
I
GSS
Gate Leakage Current
V
GS
=
10V , V
DS
=0V
P-Ch
100
nA
V
GS
=10V , I
DS
=15A
12
15
V
GS
=4.5V , I
DS
=5A
17
20
V
GS
=2.5V , I
DS
=2A
N-Ch
25
30
V
GS
=-10V , I
DS
=-5A
60
70
V
GS
=-4.5V , I
DS
=-3.2A
72
80
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=-2.5V , I
DS
=-1A
P-Ch
98
105
m
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
N-Channel
P-Channel
Unit
V
DSS
Drain-Source Voltage
20
-20
V
GSS
Gate-Source Voltage
12
12
V
I
D
*
Maximum Drain Current Continuous
15
-5
I
DM
Maximum Drain Current Pulsed
30
-10
A
T
A
=25
C
2.5
2.5
P
D
Maximum Power Dissipation
T
A
=100
C
1.0
1.0
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
50
C/W
* Surface Mounted on FR4 Board, t
10 sec.
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
3
APM9930/C
Notes
a
: Guaranteed by design, not subject to production testing
Electrical Characteristics (Cont.)
(T
A
= 25
C unless otherwise noted)
APM9930/C
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
I
SD
=5A , V
GS
=0V
N-Ch
0.6
1.3
V
SD
a
Diode Forward Voltage
I
SD
=-2A , V
GS
=0V
P-Ch
-0.6
-1.3
V
Dynamic
a
N-Ch
14
22
Q
g
Total Gate Charge
P-Ch
6.8
16
N-Ch
5
Q
gs
Gate-Source Charge
P-Ch
3.6
N-Ch
2.8
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V
P-Channel
V
DS
=-10V , I
DS
=-1A
V
GS
=-4.5V
P-Ch
1.08
nC
N-Ch
6
12
t
d(ON)
Turn-on Delay Time
P-Ch
21
42
N-Ch
5
10
T
r
Turn-on Rise Time
P-Ch
45
85
N-Ch
16
40
t
d(OFF)
Turn-off Delay Time
P-Ch
36
80
N-Ch
5
20
T
f
Turn-off Fall Time
N-Channel
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=10
P-Channel
V
DD
=-10V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=10
P-Ch
20
40
ns
N-Ch
1225
C
iss
Input Capacitance
P-Ch
495
N-Ch
330
C
oss
Output Capacitance
P-Ch
130
N-Ch
220
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
P-Ch
60
pF
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
4
APM9930/C
0
4
8
12
16
20
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0
2
4
6
8
10
0
4
8
12
16
20
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
Typical Characteristics
V
GS
=2.5V
I
D-
Drain Current (A)
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
I
DS
=250uA
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Drain Current
I
D
- Drain Current (A)
V
GS
=4.5V
Output Characteristics
I
D
-Drain Current (A)
V
GS
=3,4,5,6,7,8,9,10V
V
DS
- Drain-to-Source Voltage (V)
V
GS
=10V
V
GS
=2V
N-Channel
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
5
APM9930/C
0
1
2
3
4
5
6
7
8
9
10
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0
5
10
15
20
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Typical Characteristics (Cont.)
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Gate-to-Source Voltage
R
DS(ON)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
V
GS
=10V
I
D
=15A
T
J
- Junction Temperature (C)
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
-Gate-Source V
oltage (V)
V
DS
=10V
I
D
=6A
N-Channel
I
D
=15A
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
6
APM9930/C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
20
0.01
0.1
1
10
0
10
20
30
40
50
60
70
80
30
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
30
Source-Drain Diode Forward Voltage
I
S
-Source Current (A)
T
J
=150C
T
J
=25C
V
SD
-Source-to-Drain Voltage (V)
Typical Characteristics (Cont.)
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
SINGLE PULSE
N-Channel
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
7
APM9930/C
0
1
2
3
4
5
6
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0
1
2
3
4
5
0
2
4
6
8
10
0
2
4
6
8
10
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Typical Characteristics
-I
D-
Drain Current (A)
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
-V
GS(th)-
Threshold V
oltage (V)
(Normalized)
-I
DS
=250uA
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Drain Current
-I
D
- Drain Current (A)
-V
GS
=4.5V
Output Characteristics
-I
D
-Drain Current (A)
-V
GS
=4,5,6,7,8,9,10V
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
=10V
-V
GS
=3V
P-Channel
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
8
APM9930/C
2
3
4
5
6
7
8
9
10
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0
5
10
15
20
0
100
200
300
400
500
600
700
-50
-25
0
25
50
75
100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Typical Characteristics (Cont.)
-V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Gate-to-Source Voltage
R
DS(ON)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
-V
GS
=10V
-I
D
=5A
T
J
- Junction Temperature (C)
-V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
Q
G
- Gate Charge (nC)
-V
GS
-Gate-Source V
oltage (V)
-V
DS
=10V
-I
D
=1A
P-Channel
-I
D
=5A
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
9
APM9930/C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
30
0.01
0.1
1
10
0
20
40
60
80
30
Source-Drain Diode Forward Voltage
-I
S
-Source Current (A)
T
J
=150C
T
J
=25C
-V
SD
-Source-to-Drain Voltage (V)
Typical Characteristics (Cont.)
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
D=0.02
SINGLE PULSE
P-Channel
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
10
APM9930/C
Packaging Information
Millimet ers
Inches
Dim
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
1
8
8
H
E
e1
e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
11
APM9930/C
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition
(IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183
C to Peak)
3
C/second max.
10
C /second max.
Preheat temperature 125 25
C)
120 seconds max
Temperature maintained above 183
C
60 150 seconds
Time within 5
C of actual peak temperature 10 20 seconds
60 seconds
Peak temperature range
220 +5/-0
C or 235 +5/-0
C 215-219
C or 235 +5/-0
C
Ramp-down rate
6
C /second max.
10
C /second max.
Time 25
C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness



2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume



350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0
C
Convection 235 +5/-0
C
VPR 215-219
C
VPR 235 +5/-0
C
IR/Convection 220 +5/-0
C
IR/Convection 235 +5/-0
C
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
12
APM9930/C
Carrier Tape & Reel Dimensions
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Reliability test program
Application
A
B
C
J
T1
T2
W
P
E
330
1
62 +1.5
12.75+
0.15
2
0.5
12.4
0.2
2
0.2
12
0. 3
8
0.1
1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOP- 8
5.5
1
1.55 +0.1 1.55+ 0.25 4.0
0.1 2.0
0.1 6.4
0.1 5.2
0. 1
2.1
0.1 0.3
0.013
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Sep., 2002
www.anpec.com.tw
13
APM9930/C
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP- 8
12
9.3
2500