N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM9926/C
Features
Applications
20V/6A , R
DS(ON)
=28m
(typ.) @ V
GS
=4.5V
R
DS(ON)
=38m
(typ.) @ V
GS
=2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 and TSSOP-8 Packages
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Pin Description
SO-8
TSSOP-8
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D2
D2
D1
D1
1
2
3
4
5
6
7
8
D1
S1
S1
G1
G2
S2
S2
D2
G 1
S 1
D 1
S 1
G 2
S 2
D 2
S 2
G2
S2
D2 D2
G1
S1
D1 D1
SO-8
TSSOP-8
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D
D
D
D
1
2
3
4
5
6
7
8
D
S1
S1
G1
G2
S2
S2
D
G 1
S 1
D
S 1
G 2
S 2
D
S 2
G 1
S1
D
G 2
S2
D
APM9926
APM9926C
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw
2
APM9926/C
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
10
V
I
D
*
Maximum Drain Current Continuous
6
I
DM
Maximum Drain Current Pulsed
20
A
SO-8
1.6
T
A
=25
C
TSSOP-8
1.0
SO-8
0.625
P
D
Maximum Power Dissipation
T
A
=100
C
TSSOP-8
0.4
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
80
C/W
* Surface Mounted on FR4 Board, t
10 sec.
Ordering and Marking Information
APM9926/C
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8 O : TSSOP-8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
APM9926/C K/O :
APM9926/C
XXXXX
XXXXX - Date Code
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw
3
APM9926/C
APM9926/C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
20
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=16V , V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
0.5
0.7
1.5
V
I
GSS
Gate Leakage Current
V
GS
=
8V , V
DS
=0V
100
nA
V
GS
=4.5V , I
DS
=6A
28
32
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , I
DS
=5.2A
38
45
m
V
SD
a
Diode Forward Voltage
I
SD
=1.7A , V
GS
=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
10
Q
gs
Gate-Source Charge
3.6
Q
gd
Gate-Drain Charge
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V ,
2
nC
t
d(ON)
Turn-on Delay Time
17
T
r
Turn-on Rise Time
15
t
d(OFF)
Turn-off Delay Time
45
T
f
Turn-off Fall Time
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
25
ns
C
iss
Input Capacitance
520
C
oss
Output Capacitance
110
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
70
pF
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics Cont.
(T
A
= 25
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw
4
APM9926/C
0
1
2
3
4
5
0
4
8
12
16
20
0
5
10
15
20
0.010
0.015
0.020
0.025
0.030
0.035
0.040
Typical Characteristics
0.5V
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
I
D-
Drain Current (A)
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
V
GS
- Gate-to-Source Voltage (V)
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
I
DS
=250uA
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Drain Current
I
D
- Drain Current (A)
V
GS
=10V
Output Characteristics
I
D
-Drain Current (A)
V
GS
=2,3,4,5,6,7,8,9,10V
1V
V
DS
- Drain-to-Source Voltage (V)
V
GS
=4.5V
Copyright
ANPEC Electronics Corp.
Rev. A.6 - Sep., 2002
www.anpec.com.tw
5
APM9926/C
0
1
2
3
4
5
6
7
8
9
10
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
0
5
10
15
20
0
125
250
375
500
625
750
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Typical Characteristics
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
-On-Resistance (
)
I
D
=6A
On-Resistance vs. Gate-to-Source Voltage
R
DS(ON)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
V
GS
=10V
I
D
=6A
T
J
- Junction Temperature (C)
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
-Gate-Source V
oltage (V)
V
DS
=10V
I
D
=6A
Frequency=1MHz
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