Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM7318
Pin Description
Features
Applications
20V/8A , R
DS(ON)
=15m
(typ.) @ V
GS
=4.5V
R
DS(ON)
=30m
(typ.) @ V
GS
=2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D2
D2
D1
D1
SO-8
Top View
APM 7318
Handling Code
Tem p. Range
Package Code
Package Code
K : S O -8
O peration Junction Tem p. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
AP M 7318 K :
AP M 7318
XX XX X
XX XX X - Date Code
Ordering and Marking Information
N-Channel MOSFET N-Channel MOSFET
G1
S1
D1
D1
G2
S2
D2
D2
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
www.anpec.com.tw
2
APM7318
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
APM7318
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
20
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=18V , V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
0.7
0.9
1.5
V
I
GSS
Gate Leakage Current
V
GS
=
16V , V
DS
=0V
100
nA
V
GS
=4.5V , I
DS
=8A
15
20
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , I
DS
=2A
30
40
m
V
SD
a
Diode Forward Voltage
I
SD
=4A , V
GS
=0V
0.7
1.3
V
Dynamic
b
Q
g
Total Gate Charge
14
17
Q
gs
Gate-Source Charge
5
Q
gd
Gate-Drain Charge
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V
2.8
nC
t
d(ON)
Turn-on Delay Time
9
15
T
r
Turn-on Rise Time
14
20
t
d(OFF)
Turn-off Delay Time
30
43
T
f
Turn-off Fall Time
V
DD
=10V , I
DS
=2A ,
V
GEN
=4.5V , R
G
=0.2
16
24
ns
C
iss
Input Capacitance
1220
C
oss
Output Capacitance
335
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
215
pF
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
16
V
I
D
*
Maximum Drain Current Continuous
8
I
DM
Maximum Drain Current Pulsed
24
A
T
A
=25
C
2.5
W
P
D
Maximum Power Dissipation
T
A
=100C
1.0
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
50
C/W
* Surface Mounted on FR4 Board, t
10 sec.
Notes
a
: Pulse test ; pulse width
300s, duty cycle 2%
b
: Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
www.anpec.com.tw
3
APM7318
0
2
4
6
8
10
0.00
0.01
0.02
0.03
0.04
0.05
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Typical Characteristics
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
V
GS(th)
-Threshold V
oltage (V)
(Normalized)
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
I
DS
=250
A
T
J
=125
C
T
J
=25
C
T
J
=-55
C
V
GS
=3,4,5,6,7,8,9,10V
V
GS
=2V
V
GS
=2.5V
V
GS
=2.5V
V
GS
=4.5V
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
www.anpec.com.tw
4
APM7318
1
2
3
4
5
6
7
8
9
10
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
5
10
15
20
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (
)
(Normalized)
R
DS (ON)
- On-Resistance (
)
Gate Voltage (V)
T
j
-Junction Temperature (
C)
Capacitance Characteristics
C-Capacitance (pF)
V
GS
=4.5V
I
DS
=8A
Crss
Coss
Ciss
Frequency=1MHz
V
DS
-Drain-to-Source Voltage (V)
I
DS
=8A
Gate Charge
V
GS
-Gate-to-Source V
oltage (V)
V
DS
=10V
I
DS
=6A
Q
G
-Total Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2003
www.anpec.com.tw
5
APM7318
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
30
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
T
J
=25
C
T
J
=150
C
0.01
0.1
1
10
0
10
20
30
40
50
60
70
80
30
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
30
Typical Characteristics (Cont.)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
D= 0.02
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
SINGLE PULSE
Power (W)
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
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