Dual N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM7313K
Features
Applications
Pin Description
Ordering and Marking Information
N-Channel MOSFET
APM7313
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM7313 K :
APM7313
XXXXX
XXXXX - Date Code
Lead Free Code
30V/6A,
R
DS(ON)
=21m
(typ.) @ V
GS
= 10V
R
DS(ON)
=27m
(typ.) @ V
GS
= 4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOP
-
8
G1
S1
D1
D1
(8)
(7)
(2)
(1)
G2
S2
D2
D2
(6)
(5)
(4)
(3)
Note: ANPEC lead-free products contain m olding com pounds/die attach materials and 100% matte in plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
2
APM7313K
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
*
Continuous Drain Current
6
I
DM
*
300
s Pulsed Drain Current
V
GS
=10V
24
A
I
S
*
Diode Continuous Forward Current
3
A
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
T
A
=25C
2
P
D
*
Maximum Power Dissipation
T
A
=100C
0.8
W
R
JA
*
Thermal Resistance-Junction to Ambient
62.5
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
APM7313K
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
A
30
V
V
DS
=20V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
A
=25C
30
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
1.5
2
V
I
GSS
Gate Leakage Current
V
GS
=20V, V
DS
=0V
100
nA
V
GS
=10V, I
D S
=6A
21
28
R
DS(ON)
a
Drain-Source On-state Resistance
V
GS
=4.5V, I
DS
=2A
27
42
m
V
SD
a
Diode Forward Voltage
I
SD
=2A, V
GS
=0V
0.7
1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
19
25
Q
gs
Gate-Source Charge
1.6
Q
gd
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
DS
=6A
3.6
nC
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
3
APM7313K
Electrical Characteristics (Cont.)
(T
A
= 25
C unless otherwise noted)
APM7313K
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
Dynamic Characteristics
b
R
G
Gate Resistance
V
GS
=0V,V
D S
=0V,F=1MHz
2.1
C
iss
Input Capacitance
835
C
oss
Output Capacitance
150
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
105
pF
t
d(ON)
Turn-on Delay Time
7
13
T
r
Turn-on Rise Time
8
15
t
d(OFF)
Turn-off Delay Time
28
40
T
f
Turn-off Fall Time
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
6
9
ns
Notes:
a : Pulse test ; pulse width
300
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
4
APM7313K
Typical Characteristics
I
D
- Drain Current (A)
Drain Curre nt
T
j
- Junction Temperature (C)
Safe Operation Area
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
P
tot
- Power (W)
T
j
- Junction Temperature (C)
I
D
- Drain Current (A)
Normalized Transient Thermal Resistance
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T
A
=25
o
C
0
20
40
60
80 100 120 140 160
0
2
4
6
8
T
A
=25
o
C,V
G
=10V
1E-4
1E-3
0.01
0.1
1
10 30
1E-3
0.01
0.1
1
2
Mounted on 1in
2
pad
R
JA
: 62.5
o
C/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1ms
Rds(on) Limit
1s
T
A
=25
o
C
10ms
100ms
DC
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
5
APM7313K
R
DS(ON)
- On - Resistance (m
)
Drain-Source On Resistance
I
D
- Drain Current (A)
T
j
- Junction Temperature (C)
Gate Threshold Voltage
V
DS
- Drain-Sourc e Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
Transfer Characteristics
V
GS
- Gate - Source Voltage (V)
I
D
- Drain Current (A)
Normalized Threshold Voltage
Typical Characteristics (Cont.)
0
1
2
3
4
5
0
5
10
15
20
25
30
3.5V
2.5V
3V
V
GS
= 4, 5, 6, 7, 8, 9, 10V
0
4
8
12
16
20
24
12
16
20
24
28
32
36
40
V
GS
= 10V
V
GS
= 4.5V
0
1
2
3
4
5
0
5
10
15
20
25
30
T
j
=125
o
C
T
j
=25
o
C
T
j
=-55
o
C
-50 -25
0
25
50
75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
I
DS
= 250
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
6
APM7313K
V
DS
- Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
T
j
- Junction Temperature (C)
C - Capacitance (pF)
V
SD
- Source - Drain Voltage (V)
Source-Drain Diode Forward
I
S
- Source Current (A)
Capacitance
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
- Gate - source Voltage (V)
Typical Characteristics (Cont.)
-50 -25
0
25
50
75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
R
ON
@T
j
=25
o
C: 21m
V
GS
= 10V
I
DS
= 6A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
30
T
j
=125
o
C
T
j
=25
o
C
0
4
8
12
16
20
0
2
4
6
8
10
V
DS
= 15V
I
D
= 6A
0
5
10
15
20
25
30
0
200
400
600
800
1000
1200
1400
Frequency=1MHz
Crss
Coss
Ciss
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
7
APM7313K
Packaging Information
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
1
8
8
H
E
e1
e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
8
APM7313K
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 25 C to Peak
tp
Ramp-up
t
L
Ramp-down
ts
Preheat
Tsmax
Tsmin
T
L
T
P
2 5
Temperature
Time
Critical Zone
T
L
to T
P
Reflow Condition
(IR/Convection or VPR Reflow)
Classification Reflow Profiles
Physical Specifications
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(T
L
to T
P
)
3
C/second max.
3
C/second max.
Preheat
-
Temperature Min (Tsmin)
-
Temperature Max (Tsmax)
-
Time (min to max) (ts)
100
C
150
C
60-120 seconds
150
C
200
C
60-180 seconds
Time maintained above:
-
Temperature (T
L
)
-
Time (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5
C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6
C/second max.
6
C/second max.
Time 25
C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
9
APM7313K
Carrier Tape & Reel Dimensions
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Table 1. SnPb Entectic Process Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350
<2.5 mm
240 +0/-5
C
225 +0/- 5
C
2.5 mm
225 +0/-5
C
225 +0/- 5
C
Table 2. Pb-free Process Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350 -2000
Volume mm
3
>2000
<1.6 mm
260 +0
C *
260 +0
C*
260 +0
C *
1.6 mm 2.5 mm
260 +0
C *
250 +0
C*
245 +0
C *
2.5 mm
250 +0
C *
245 +0
C*
245 +0
C *
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
C.
For example 260
C+0
C) at the rated MSL level.
Classification Reflow Profiles(Cont.)
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Reliability Test Program
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Nov., 2005
www.anpec.com.tw
10
APM7313K
Customer Service
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP- 8
12
9.3
2500
Carrier Tape & Reel Dimensions(Cont.)
A
J
B
T2
T1
C
Application
A
B
C
J
T1
T2
W
P
E
330
1
62
1.5
12.75 +
0.1 5
2 + 0.5 12.4 +0.2
2
0.2
12 + 0.3
- 0.1
8
0.1 1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOP-8
5.5
0.1 1.55
0.1 1.55+ 0.25 4.0
0.1 2.0
0.1 6.4
0.1 5.2
0.1 2.1
0.1 0.3
0.013
(mm)
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
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