Dual P-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4953
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO
-
8
-30V/-4.9A, R
DS(ON)
= 53m
(typ.) @ V
GS
= -10V
R
DS(ON)
= 80m
(typ.) @ V
GS
= -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
-30
V
GSS
Gate-Source Voltage
25
V
I
D
*
Maximum Drain Current Continuous T
A
= 25
C
-4.9
I
DM
Maximum Drain Current Pulsed
-30
A
* Surface Mounted on FR4 Board, t
10 sec.
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
P-Channel MOSFET
A PM 4953
H a n dling C o d e
T e m p . R a ng e
P a ck age C o d e
P a ck a ge C o d e
K : S O -8
O p e ra tio n J u nc tion T e m p . R a ng e
C : -5 5 to 1 50C
H a n dling C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 49 5 3 K :
A P M 49 5 3
X X X X X
X X X X X - D a te C o de
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5
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5
/
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5
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5
, ,
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4953
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
A
= 25
C
2.5
P
D
Maximum Power Dissipation
T
A
= 100
C
1.0
W
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
R
JA
*
Thermal Resistance - Junction to Ambient
50
C/W
Electrical Characteristics
(T
A
=25C unless otherwise noted)
Absolute Maximum Ratings (Cont.)
(T
A
= 25
C unless otherwise noted)
APM4953
Symbol
Parameter
Test Condition
Min. Typ
=
. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=-250
A
-30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=-24V , V
GS
=0V
-1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=-250
A
-1
-1.5
-2
V
I
GSS
Gate Leakage Current
V
GS
=
25V , V
DS
=0V
100
nA
V
GS
=-10V , I
DS
=-4.9A
53
60
R
DS(ON)
Drain-Source On-state
Resistance
>
V
GS
=-4.5V , I
DS
=-3.6A
80
95
m
V
SD
Diode Forward Voltage
>
I
SD
=-1.7A , V
GS
=0V
-0.7
-1.3
V
Dynamic
=
Q
g
Total Gate Charge
22.3
29
Q
gs
Gate-Source Charge
4.65
Q
gd
Gate-Drain Charge
V
DS
=-15V , I
GS
=-10V
l
D
=-4.6A
2
nC
t
d(ON)
Turn-on Delay Time
10
18
T
r
Turn-on Rise Time
15
20
t
d(OFF)
Turn-off Delay Time
22
38
T
f
Turn-off Fall Time
V
DD
=-15V , I
D
=-2A ,
V
GEN
=-10V , R
G
=6
R
L
=7.5
15
25
ns
C
iss
Input Capacitance
1260
C
oss
Output Capacitance
340
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=-25V
Frequency=1.0MHz
220
pF
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4953
www.anpec.com.tw
3
0
1
2
3
4
5
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Typical Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
-I
D-
Drain
Current
(
A)
Transfer Characteristics
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
-V
GS(th)-
Threshold
V
o
ltage
(V)
(Normalized)
On-Resistance vs. Drain Current
-I
D
- Drain Current (A)
R
DS(on)
-On-Resistance
(
)
-I
DS
=250
A
Output Characteristics
-I
D
-Drain
Current
(A)
-V
DS
- Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
-V
/5
=4V
-V
/5
=2V
-V
/5
=3V
-V
/5
= 5,6,7,8,9,10V
0
3
6
9
12
15
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
V
/5
=-4.5V
V
/5
=-10V
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4953
www.anpec.com.tw
4
-50 -25
0
25
50
75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0
5
10
15
20
25
30
0
400
800
1200
1600
2000
2400
2800
0
5
10
15
20
25
0
2
4
6
8
10
Typical Characteristics (Cont.)
-V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
-On-Resistance
(
)
On-Resistance vs. Gate-to-Source Voltage
R
DS(on)
-On-Resistance
(
)
(Normalized)
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (C)
-V
GS
=10V
-I
D
=4.9A
-V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance
(pF)
Gate Charge
Q
G
- Gate Charge (nC)
-V
GS
-Gate-Source
V
o
ltage
(V)
-V
D
=10V
-I
D
=4.9A
Ciss
Coss
Crss
Frequency=1MHz
1
2
3
4
5
6
7
8
9
10
0.025
0.050
0.075
0.100
0.125
0.150
0.175
0.200
0.225
0.250
-I
,
= 4.9A
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4953
www.anpec.com.tw
5
1E-4
1E-3
0.01
0.1
1
10
100
0.01
0.1
1
2
0.01
0.1
1
10
100
0
10
20
30
40
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
30
Typical Characteristics (Cont.)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized
Effective
Transient
Thermal
I
mpedance
Normalized Thermal Transient Impedence, Junction to Ambient
D= 0.02
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
Power
(
W)
Source-Drain Diode Forward Voltage
-V
SD
-Source-to-Drain Voltage (V )
-I
S
-Source
Current
(
)
T
J
=150C
T
J
=25C
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