P-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
APM 4925
Handling Code
Tem p. Range
Package Code
Package Code
K : SO -8
Operation Junction Tem p. Range
C : -55 to 150C
Handling Code
TU : Tube
TR : Tape & Reel
APM 4925
APM 4925
XXXXX
XXXXX - Date Code
-30V/-6.1A, R
DS(ON)
= 24m
(typ.) @ V
GS
= -10V
R
DS(ON)
= 30m
(typ.) @ V
GS
= -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
-30
V
GSS
Gate-Source Voltage
25
V
I
D
*
Maximum Drain Current Continuous T
A
= 25
C
-6.1
I
DM
Maximum Drain Current Pulsed
-40
A
*Surface Mounted on FR4 Board, t
10 sec.
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Pin Description
P-Channel MOSFET
1
2
3
4
5
6
7
8
S1
G 1
S2
G 2
D2
D2
D1
D1
G 1
S 1
D 1 D 1
G 2
S 2
D 2 D 2
SO
-
8
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
A
= 25
C
2.5
P
D
Maximum Power Dissipation
T
A
= 100
C
1
W
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
R
JA
Thermal Resistance - Junction to Ambient
50
C/W
APM4925
Symbol
Parameter
Test Condition
Min.
Typ
a
. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
= -250
A
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24V, V
GS
=0V
-1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250
A
-1
-1.5
-2
V
I
GSS
Gate Leakage Current
V
GS
=
25V , V
DS
=0V
100
nA
V
GS
= -10V, I
D
= -6.1A
24
27
R
DS(ON)
b
Drain-Source On-state Resistance
V
GS
= -4.5V, I
D
= -5.1A
30
35
m
V
SD
b
Diode Forward Voltage
I
SD
= -1.7A, V
GS
=0V
-0.7
-1.3
V
Dynamic
a
Q
g
Total Gate Charge
48
58
Q
gs
Gate-Source Charge
10
Q
gd
Gate-Drain Charge
V
DS
= -15V, V
GS
= -10V,
I
D
= -4.6A
9
nC
t
d(ON)
Turn-on Delay Time
17
33
t
r
Turn-on Rise Time
18
35
t
d(OFF)
Turn-off Delay Time
70
128
t
f
Turn-off Fall Time
V
DD
= -25V, R
L
=12.5
,
I
D
= -2A , V
GEN
= -10V,
R
G
=6
,
30
56
ns
C
iss
Input Capacitance
3200
C
oss
Output Capacitance
560
C
rss
Reverse Capacitance
V
GS
=0V, V
DS
= -25V
Frequency = 1.0MHZ
250
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
300
s, duty cycle
2%
Electrical Characteristics
(T
A
=25C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
3
-50 -25
0
25
50
75
100 125 150
0.60
0.75
0.90
1.05
1.20
1.35
1.50
0
5
10
15
20
25
30
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0
1
2
3
4
5
0
10
20
30
40
50
Typical Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
-I
D-
Drain Current (A)
Transfer Characteristics
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
-V
GS(th)-
Threshold V
oltage (V)
(Normalzed)
On-Resistance vs. Drain Current
-V
GS
=4.5V
-I
D
- Drain Current (A)
-V
GS
=10V
R
DS(on)
-On-Resistance (
)
-I
DS
=250
A
0
2
4
6
8
10
0
10
20
30
40
50
Output Characteristics
-I
D
-Drain Current (A)
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
=3V
-V
GS
=4,5,6,7,8,9,10V
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
4
2
3
4
5
6
7
8
9
10
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0
10
20
30
40
50
0
2
4
6
8
10
Typical Characteristics
-V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
-On-Resistance (
)
On-Resistance vs. Gate-to-Source Voltage
-I
D
=6.1A
-50
-25
0
25
50
75
100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
DS(on)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (C)
-V
GS
=10V
-I
D
=6.1A
0
6
12
18
24
30
0
900
1800
2700
3600
4500
Ciss
Crss
Coss
-V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Gate Charge
Q
G
- Gate Charge (nC)
-V
GS
-Gate-Source V
oltage (V)
-V
DS
=15V
-I
D
=4.6A
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
0.01
0.1
1
10
0
20
40
60
80
100
Typical Characteristics
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
D= 0.02
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
Power (W)
Source-Drain Diode Forward Voltage
-V
SD
-Source-to-Drain Voltage (V )
-I
S
-Source Current (
)
T
J
=150C
T
J
=25C
30
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
6
Millimet ers
Inches
Dim
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
1
8
8
H
E
e1
e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Package Information
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
7
Physical Specifications
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Packaging
2500 devices per reel for SOP-8
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Classification Reflow Profiles
Convection or IR/ Convection
VPR
Average ramp-up rate(183
C to Peak)
3
C/second max.
10
C /second max.
Preheat temperature 125
25
C)
120 seconds max.
Temperature maintained above 183
C
60 ~ 150 seconds
Time within 5
C of actual peak
temperature
10 ~ 20 seconds
60 seconds
Peak temperature range
220 +5/-0
C or 235 +5/-0
C
215~ 219
C or 235 +5/-0
C
Ramp-down rate
6
C /second max.
10
C /second max.
Time 25
C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bags
pkg. thickness < 2.5mm and
pkg. volume
350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0
C
Convection 235 +5/-0
C
VPR 215-219
C
VPR 235 +5/-0
C
IR/Convection 220 +5/-0
C
IR/Convection 235 +5/-0
C
Pre-heat temperature
183 C
Peak temperature
Time
temperature
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
8
R e lia b ility te s t p ro g ra m
Te s t ite m
M e th o d
D e s c rip tio n
S O L D E R A B IL IT Y
M IL -S T D -8 8 3 D -2 0 0 3
2 4 5
C , 5 S E C
H O LT
M IL -S T D -8 8 3 D -1 0 0 5 .7
1 0 0 0 H rs B ia s @ 1 2 5
C
P C T
J E S D -2 2 -B , A 1 0 2
1 6 8 H rs , 1 0 0 % R H , 1 2 1
C
T S T
M IL -S T D -8 8 3 D -1 0 11 .9
-6 5
C ~ 1 5 0
C , 2 0 0 C y c le s
E S D
M IL -S T D -8 8 3 D -3 0 1 5 .7
V H B M > 2 K V, V M M > 2 0 0 V
L a tc h -U p
J E S D 7 8
1 0 m s , I
tr
> 1 0 0 m A
Carrier Tape
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Application
A
B
C
J
T1
T2
W
P
E
330
1
62 +1.5
12.75+
0.15
2
0.5
12.4
0.2
2
0.2
12
0. 3
8
0.1
1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5
1
1.55 +0.1 1.55+ 0.25 4.0
0.1
2.0
0.1
6.4
0.1
5.2
0. 1
2.1
0.1 0.3
0.013
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOP- 8
11.5
0.1
1.5 +0.1
1.5+ 0.25 4.0
0.1
2.0
0.1
8.2
0.1
13
0.1
2.5
0.1 0.35
0.013
Copyright
ANPEC Electronics Corp.
Rev. A.4 - Dec., 2002
APM4925
www.anpec.com.tw
9
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Carrier Width
12
Cover Tape Width
9.3
(mm)
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