P-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO
-
8
-30V/-8A, R
DS(ON)
= 16m
(typ.) @ V
GS
= -10V
R
DS(ON)
= 24m
(typ.) @ V
GS
= -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
-30
V
GSS
Gate-Source Voltage
25
V
I
D
*
Maximum Drain Current Continuous T
A
= 25
C
-8
I
DM
Maximum Drain Current Pulsed
-50
A
*Surface Mounted on FR4 Board, t
10 sec.
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
P-Channel MOSFET
G
D
S
S
S
D D D
A P M 483 5
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 4 8 3 5
A P M 4 8 3 5
X X X X X
X X X X X - D a te C o d e
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
A
= 25
C
2.5
P
D
Maximum Power Dissipation
T
A
= 100
C
1
W
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
R
JA
Thermal Resistance - Junction to Ambient
50
C/W
Electrical Characteristics
(T
A
=25C unless otherwise noted)
Absolute Maximum Ratings (Cont.)
(T
A
= 25
C unless otherwise noted)
APM4835
Symbol
Parameter
Test Condition
Min.
Typ
a
. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
= -250
A
-30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -30V, V
GS
=0V
-1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
= -250
A
-1
-1.5
-2
V
I
GSS
Gate Leakage Current
V
GS
=
25V , V
DS
=0V
100
nA
V
GS
= -10V, I
D
= -8A
16
19
R
DS(ON)
Drain-Source On-state Resistance
b
V
GS
= -4.5V, I
D
= -5A
24
30
m
V
SD
Diode Forward Voltage
b
I
SD
= -3A, V
GS
=0V
-0.7
-1.3
V
Dynamic
a
Q
g
Total Gate Charge
48
60
Q
gs
Gate-Source Charge
10
Q
gd
Gate-Drain Charge
V
DS
= -15V, V
GS
= -10V,
I
D
= -4.6A
9
nC
t
d(ON)
Turn-on Delay Time
16
30
t
r
Turn-on Rise Time
17
30
t
d(OFF)
Turn-off Delay Time
75
120
t
f
Turn-off Fall Time
V
DD
= -25V, I
D
= -2A,
V
GEN
= -10V, R
G
=6
R
L
=12.5
31
80
ns
C
iss
Input Capacitance
3800
C
oss
Output Capacitance
590
C
rss
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-25V
Frequency = 1.0MHZ
250
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
500
s, duty cycle
2%
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
3
0
1
2
3
4
5
0
10
20
30
40
50
Typical Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
-I
D-
Drain Current (A)
Transfer Characteristics
-V
GS
- Gate-to-Source Voltage (V)
-50
-25
0
25
50
75
100 125 150
0.50
0.75
1.00
1.25
1.50
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
-V
GS(th)-
Threshold V
oltage (V)
(Normalized)
0
10
20
30
40
50
0.00
0.01
0.02
0.03
0.04
0.05
On-Resistance vs. Drain Current
-V
GS
=4.5V
-I
D
- Drain Current (A)
-V
GS
=10V
R
DS(on)
-On-Resistance (
)
-I
DS
=250
A
0
2
4
6
8
10
0
10
20
30
40
50
Output Characteristics
-I
D
-Drain Current (A)
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
=3V
-V
GS
=4,5,6,7,8,9,10V
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
4
0
2
4
6
8
10
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Typical Characteristics (Cont.)
-V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
-On-Resistance (
)
On-Resistance vs. Gate-to-Source Voltage
-I
D
=8A
-50
-25
0
25
50
75
100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
DS(on)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (C)
-V
GS
=10V
-I
D
=8A
0
6
12
18
24
30
0
900
1800
2700
3600
4500
Ciss
Crss
Coss
-V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
0
10
20
30
40
50
0
2
4
6
8
10
Gate Charge
Q
G
- Gate Charge (nC)
-V
GS
-Gate-Source V
oltage (V)
-V
DS
=15V
-I
D
=4.6A
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
0.01
0.1
1
10
0
20
40
60
80
100
Typical Characteristics (Cont.)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
D= 0.02
Duty Cycle = 0.5
D= 0.2
D= 0.1
D= 0.05
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
Power (W)
Source-Drain Diode Forward Voltage
-V
SD
-Source-to-Drain Voltage (V )
-I
S
-Source Current (
)
T
J
=150C
T
J
=25C
30
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
6
Millimet ers
Inches
Dim
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
1
8
8
H
E
e1
e2
0.015X45
D
A
A1
0.004max.
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Packaging Information
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
7
Reflow Condition
(IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183
C to Peak)
3
C/second max.
10
C /second max.
Preheat temperature 125 25
C)
120 seconds max
Temperature maintained above 183
C
60 150 seconds
Time within 5
C of actual peak temperature 10 20 seconds
60 seconds
Peak temperature range
220 +5/-0
C or 235 +5/-0
C 215-219
C or 235 +5/-0
C
Ramp-down rate
6
C /second max.
10
C /second max.
Time 25
C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume
350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0
C
Convection 235 +5/-0
C
VPR 215-219
C
VPR 235 +5/-0
C
IR/Convection 220 +5/-0
C
IR/Convection 235 +5/-0
C
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
8
Carrier Tape & Reel Dimensions
Application
A
B
C
J
T1
T2
W
P
E
330
1
62 +1.5
12.75+
0.15
2
0.5
12.4
0.2
2
0.2
12
0. 3
8
0.1
1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOP- 8
5.5
1
1.55 +0.1 1.55+ 0.25 4.0
0.1 2.0
0.1 6.4
0.1 5.2
0. 1
2.1
0.1 0.3
0.013
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Reliability test program
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
APM4835
www.anpec.com.tw
9
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP- 8
12
9.3
2500
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