P-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM4431K
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
Ordering and Marking Information
P-Channel MOSFET
APM4431
Handling Code
Tem p. Range
Package Code
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4431 K :
XXXXX - Date Code
Lead Free Code
APM4431
XXXXX
-30V/-5.3A ,
R
DS(ON)
=32m
(typ.) @ V
GS
=-10V
R
DS(ON)
=50m
(typ.) @ V
GS
=-4.5V
Super High Dense Cell Design
Reliable and Rugged
SOP-8 Package
Lead Free Available (RoHS Compliant)
S
S
S
G
D
D
D
D
Top View of SOP
-
8
G
D
S
S
S
D D D
(4)
(1, 2, 3)
(5, 6, 7, 8)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
2
APM4431K
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Symbol Parameter Rating
Unit
V
DSS
Drain-Source Voltage
-30
V
GSS
Gate-Source Voltage
20
V
I
D
*
Continuous Drain Current
-5.3
I
DM
*
Pulsed Drain Current
V
GS
=-10V
-20
A
I
S
*
Diode Continuous Forward Current
-2.3
A
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
T
A
=25C 2
P
D
*
Maximum Power Dissipation
T
A
=100C 0.8
W
R
JA
*
Thermal Resistance-Junction to Ambient
62.5
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
APM4431K
Symbol Parameter
Test
Condition
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=-250
A
-30 V
V
DS
=-24V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain Current
T
A
=25C
-30
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=-250
A
-1 -1.5 -2 V
I
GSS
Gate Leakage Current
V
GS
=20V, V
DS
=0V
100
nA
V
GS
=-10V, I
DS
=-5.3A
32
40
R
DS(ON)
a
Drain-Source On-state Resistance
V
GS
=-4.5V, I
DS
=-2A
50
60
m
V
SD
a
Diode
Forward
Voltage
I
SD
=-2.3A, V
GS
=0V
-0.8
-1.3
V
Dynamic Characteristics
b
R
G
Gate
Resistance
V
GS
=0V,V
DS
=0V,F=1MHz 4
C
iss
Input
Capacitance
1460
C
oss
Output
Capacitance
225
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=-25V,
Frequency=1.0MHz
155
pF
t
d(ON)
Turn-on
Delay
Time
12
22
T
r
Turn-on Rise Time
15
22
t
d(OFF)
Turn-off
Delay
Time
35
58
T
f
Turn-off
Fall
Time
V
DD
=-15V,R
L
=-15
,
I
DS
=-1A,V
GEN
=10V,
R
G
=6
15
30
ns
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
3
APM4431K
Electrical Characteristics (Cont.)
(T
A
= 25
C unless otherwise noted)
APM4431K
Symbol Parameter
Test
Condition
Min. Typ. Max.
Unit
Gate Charge Characteristics
b
Q
g
Total Gate Charge
27.4
35
Q
gs
Gate-Source
Charge
5
Q
gd
Gate-Drain
Charge
V
DS
=-15V, V
GS
=-10V,
I
DS
=-5.3A
4.1
nC
Notes:
a : Pulse test ; pulse width
300
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
4
APM4431K
1E-4
1E-3
0.01
0.1
1
10 30
1E-3
0.01
0.1
1
2
Mounted on 1in
2
pad
R
JA
: 62.5
o
C/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
-I
D
-
Drain Current (A)
Drain Current
T
j
- Junction Temperature (C)
Safe Operation Area
-V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
P
tot
- Power (W)
T
j
- Junction Temperature (C)
-I
D
- Drain Current (A)
0
20
40
60
80
100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T
A
=25
o
C
0
20
40
60
80
100 120 140 160
0
0
1
2
3
4
5
6
7
T
A
=25
o
C,V
G
=-10V
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1ms
R
ds(
on
) Li
mi
t
1s
T
A
=25
o
C
10ms
100ms
DC
Normalized Transient Thermal Resistance
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
5
APM4431K
R
DS(ON)
- On - Resistance (m
)
Drain-Source On Resistance
-I
D
- Drain Current (A)
T
j
- Junction Temperature (C)
Gate Threshold Voltage
Normalized Threshold V
oltage
-V
DS
- Drain - Source Voltage (V)
-I
D
- Drain Current (A)
Output Characteristics
Transfer Characteristics
-V
GS
- Gate - Source Voltage (V)
-I
D
- Drain Current (A)
Typical Characteristics (Cont.)
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
-3V
V
GS
= -4,-5-6,-7,-8,-9,-10V
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
V
GS
= -10V
V
GS
= -4.5V
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
20
T
j
=-55
o
C
T
j
=125
o
C
T
j
=25
o
C
-50
-25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
DS
= -250
A
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
6
APM4431K
-V
DS
- Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
T
j
- Junction Temperature (C)
C - Capacitance (pF)
-V
SD
- Source - Drain Voltage (V)
Source-Drain Diode Forward
-I
S
- Source Current (A)
Capacitance
Gate Charge
Q
G
- Gate Charge (nC)
-V
GS
- Gate-source V
oltage (V)
Typical Characteristics (Cont.)
-50
-25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
ON
@T
j
=25
o
C: 32m
V
GS
= -10V
I
DS
= -5.3A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
20
T
j
=150
o
C
T
j
=25
o
C
0
5
10
15
20
25
30
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
Frequency=1MHz
Crss
Coss
Ciss
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
V
DS
= -15V
I
D
= -5.3A
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
7
APM4431K
Packaging Information
M i ll i m e t er s
I n c h e s
D i m
M i n .
M a x .
M i n .
M a x .
A
1 . 3 5
1 . 7 5
0 . 0 5 3
0 . 0 6 9
A 1
0 . 1 0
0 . 2 5
0 . 0 0 4
0 . 0 1 0
D
4 . 8 0
5 . 0 0
0 . 1 8 9
0 . 1 9 7
E
3 . 8 0
4 . 0 0
0 . 1 5 0
0 . 1 5 7
H
5 . 8 0
6 . 2 0
0 . 2 2 8
0 . 2 4 4
L
0 . 4 0
1 . 2 7
0 . 0 1 6
0 . 0 5 0
e 1
0 . 3 3
0 . 5 1
0 . 0 1 3
0 . 0 2 0
e 2
1 . 2 7 B S C
0 . 5 0 B S C
1
8
8
H
E
e 1
e 2
0.015X45
D
A
A 1
0 . 0 0 4 m a x .
1
L
SOP-8 pin ( Reference JEDEC Registration MS-012)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
8
APM4431K
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
t 25 C to P e ak
tp
R am p-u p
t
L
R am p-d ow n
ts
P rehea t
T sm ax
T sm in
T
L
T
P
25
Tem
p
er
at
ur
e
T im e
C ritical Z one
T
L
to T
P
Reflow Condition
(IR/Convection or VPR Reflow)
Classification Reflow Profiles
Physical Specifications
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(T
L
to T
P
)
3
C/second max.
3
C/second max.
Preheat
-
Temperature Min (Tsmin)
-
Temperature Max (Tsmax)
-
Time (min to max) (ts)
100
C
150
C
60-120 seconds
150
C
200
C
60-180 seconds
Time maintained above:
-
Temperature (T
L
)
-
Time (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5
C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6
C/second max.
6
C/second max.
Time 25
C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
9
APM4431K
Carrier Tape & Reel Dimensions
t
A o
E
W
P o
P
K o
B o
D 1
D
F
P 1
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Reliability Test Program
Table 1. SnPb Entectic Process Package Peak R eflow Tem peratures
Package Thickness
Volum e m m
3
<350
Volum e m m
3
350
<2.5 m m
240 +0/-5
C 225
+0/-5
C
2.5 m m
225 +0/-5
C 225
+0/-5
C
Table 2. Pb-free Process Package Classification Reflow Tem peratures
Package Thickness
Volum e m m
3
<350
Volum e m m
3
350-2000
Volum e m m
3
>2000
<1.6 m m
260 +0
C* 260
+0
C* 260
+0
C*
1.6 m m 2.5 m m
260 +0
C* 250
+0
C* 245
+0
C*
2.5 m m
250 +0
C* 245
+0
C* 245
+0
C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0
C.
For exam ple 260
C+0
C) at the rated M SL level.
Classification Reflow Profiles(Cont.)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
www.anpec.com.tw
10
APM4431K
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP- 8
12
9.3
2500
Carrier Tape & Reel Dimensions(Cont.)
A
J
B
T 2
T 1
C
Application
A B C J T1 T2 W P E
330
1 62
1.5
12.75 +
0.1 5
2 + 0.5
12.4 +0.2
2
0.2
12 + 0.3
- 0.1
8
0.1
1.75
0.1
F D D1 Po P1 Ao Bo Ko t
SOP-8
5.5
0.1 1.55
0.1 1.55+ 0.25 4.0
0.1 2.0
0.1 6.4
0.1
5.2
0.1
2.1
0.1 0.3
0.013
(mm)
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