N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM4416
A P M 44 16
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 4 4 1 6 K :
A P M 4 4 1 6
X X X X X
X X X X X - D a te C o d e
Pin Description
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
30V/8A , R
DS(ON)
=15m
(typ.) @ V
GS
=10V
R
DS(ON)
=22m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
*
Maximum Drain Current Continuous
8
I
DM
Maximum Drain Current Pulsed
32
A
* Surface Mounted on FR4 Board, t
10 sec.
SO-8
Top View
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
N-Channel MOSFET
G
S
D
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
2
APM4416
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Absolute Maximum Ratings Cont.
(T
A
= 25
C unless otherwise noted)
APM4416
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
30
V
V
DS
=24V , V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V, V
GS
=0V, T
j
= 55
C
5
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
3
V
I
GSS
Gate Leakage Current
V
GS
=
20V , V
DS
=0V
100
nA
V
GS
=10V , I
DS
=4A
15
18
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=4.5V , I
DS
=2A
22
30
m
V
SD
a
Diode Forward Voltage
I
SD
=2A , V
GS
=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
15
20
Q
gs
Gate-Source Charge
5.8
Q
gd
Gate-Drain Charge
V
DS
=15V , I
DS
= 10A
V
GS
=5V
3.8
nC
t
d(ON)
Turn-on Delay Time
11
18
T
r
Turn-on Rise Time
17
26
t
d(OFF)
Turn-off Delay Time
37
54
T
f
Turn-off Fall Time
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
20
30
ns
C
iss
Input Capacitance
1150
C
oss
Output Capacitance
230
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
100
pF
Symbol
Parameter
Rating
Unit
T
A
=25
C
2.5
P
D
Maximum Power Dissipation
T
A
=100
C
1.0
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
50
C/W
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
3
APM4416
0
5
10
15
20
25
30
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
Typical Characteristics
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
I
DS
=250
A
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
T
J
=125
C
T
J
=25
C
T
J
=-55
C
0
2
4
6
8
10
0
5
10
15
20
25
30
V
DS
-Drain-to-Source Voltage (V)
Output Characteristics
I
DS
-Drain Current (A)
V
GS
=5,6,7,8,9,10V
V
GS
=3V
V
GS
=3.5V
V
GS
=4V
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
V
GS
=10V
V
GS
=4.5V
V
GS(th)
-Threshold V
oltage (V)
(Normalized)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
4
APM4416
Typical Characteristics Cont.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (
) (Normalized)
T
j
-Junction Temperature (
C)
V
GS
=10V
I
DS
=4A
100
1000
2000
500
30
0.1
1
10
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
Frequency=1MHz
3
4
5
6
7
8
9
10
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (
)
Gate Voltage (V)
I
DS
=4A
0
5
10
15
20
25
30
0
2
4
6
8
10
Gate Charge
Q
G
-Total Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
V
DS
=15V
I
DS
=10A
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
5
APM4416
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.01
0.1
1
Typical Characteristics Cont.
10
-2
10
-1
10
0
10
1
10
2
0
10
20
30
40
50
60
Time (sec)
Single Pulse Power
Power (W)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
T
J
=-55
C
T
J
=25
C
T
J
=125
C
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
6
APM4416
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
Millimet ers
Inches
Dim
Min.
Max.
Min.
Max.
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
D
4.80
5.00
0.189
0.197
E
3.80
4.00
0.150
0.157
H
5.80
6.20
0.228
0.244
L
0.40
1.27
0.016
0.050
e1
0.33
0.51
0.013
0.020
e2
1.27BSC
0.50BSC
1
8
8
H
E
e1
e2
0.015X45
D
A
A1
0.004max.
1
L
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
7
APM4416
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition
(IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183
C to Peak)
3
C/second max.
10
C /second max.
Preheat temperature 125 25
C)
120 seconds max
Temperature maintained above 183
C
60 150 seconds
Time within 5
C of actual peak temperature 10 20 seconds
60 seconds
Peak temperature range
220 +5/-0
C or 235 +5/-0
C 215-219
C or 235 +5/-0
C
Ramp-down rate
6
C /second max.
10
C /second max.
Time 25
C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume
350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0
C
Convection 235 +5/-0
C
VPR 215-219
C
VPR 235 +5/-0
C
IR/Convection 220 +5/-0
C
IR/Convection 235 +5/-0
C
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
8
APM4416
8
Carrier Tape & Reel Dimensions
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Application
A
B
C
J
T1
T2
W
P
E
330
1
62 +1.5
12.75+
0.15
2
0.5
12.4
0.2
2
0.2
12
0. 3
8
0.1
1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOP- 8
5.5
1
1.55 +0.1 1.55+ 0.25 4.0
0.1
2.0
0.1
6.4
0.1
5.2
0. 1
2.1
0.1 0.3
0.013
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Reliability test program
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jan., 2002
www.anpec.com.tw
9
APM4416
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOP- 8
12
9.3
2500
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