N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
SO
-
8
A P M 440 8
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
K : S O -8
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 4 4 0 8 K :
A P M 4 4 0 8
X X X X X
X X X X X - D a te C o d e
20V/21A, R
DS(ON)
= 3.5m
(typ.) @ V
GS
= 10V
R
DS(ON)
= 5m
(typ.) @ V
GS
= 4.5V
R
DS(ON)
= 8m
(typ.) @ V
GS
= 2.5V
High Density Cell Design
Reliable and Rugged
SO-8 Package
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
16
V
I
D
*
Maximum Drain Current Continuous
21
I
DM
Maximum Drain Current Pulsed
60
A
* Surface Mounted on FR4 Board, t
10 sec.
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
N-Channel MOSFET
G
S
D
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw
2
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings Cont.
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
T
A
=25
C
1.6
P
D
Maximum Power Dissipation
T
A
=100
C
0.625
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
JA
Thermal Resistance Junction to Ambient
80
C/W
APM4408
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
20
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=18V , V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
0.8
1.5
V
I
GSS
Gate Leakage Current
V
GS
=
16V , V
DS
=0V
100
nA
V
GS
=10V , I
DS
=21A
3.5
4.5
V
GS
=4.5V , I
DS
=17A
5
6
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , I
DS
=10A
8
10
m
V
SD
a
Diode Forward Voltage
I
SD
=2.9A , V
GS
=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
45
65
Q
gs
Gate-Source Charge
20
Q
gd
Gate-Drain Charge
V
DS
=10V , I
DS
= 21A
V
GS
=4.5V ,
17
nC
t
d(ON)
Turn-on Delay Time
35
50
T
r
Turn-on Rise Time
19
28
t
d(OFF)
Turn-off Delay Time
110
170
T
f
Turn-off Fall Time
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=6
60
75
ns
C
iss
Input Capacitance
5300
C
oss
Output Capacitance
1000
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
300
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
300
s, duty cycle
2%
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw
3
Typical Characteristics
0
1
2
3
4
5
0
10
20
30
40
50
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
V
GS
=4,5,6,7,8,9,10V
V
GS
=3V
0
1
2
3
4
5
6
0
10
20
30
40
50
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
T
J
=125
C
T
J
=25
C
T
J
=-55
C
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
I
DS
=250
A
0
10
20
30
40
50
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
V
GS
=10V
V
GS
=4.5V
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw
4
0
5
10
15
20
0
1000
2000
3000
4000
5000
6000
7000
8000
Typical Characteristics Cont.
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On-Resistance (
)
(Normalized)
T
j
-Junction Temperature (
C)
V
GS
=10V
I
DS
=21A
0
1
2
3
4
5
6
7
8
9
10
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (
)
Gate Voltage (V)
I
DS
=21A
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
0
10
20
30
40
50
60
70
80
90
0
2
4
6
8
10
Gate Charge
Q
G
-Total Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
V
DS
=10V
I
DS
=21A
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Mar., 2002
APM4408
www.anpec.com.tw
5
Typical Characteristics Cont.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
50
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
T
J
=25
C
T
J
=150
C
0.01
0.1
1
10
0
20
40
60
80
100
Time (sec)
Single Pulse Power
Power (W)
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
4. Surface Mounted
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
Normalized Transient Thermal Transient Impedence, Junction to Ambient
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