N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
APM3054N
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
G
D
S
1
2
3
Pin Description
Ordering and Marking Information
Features
Applications
Switching Regulators
Switching Converters
Top View of TO-252
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current Continuous
15
I
DM
Maximum Drain Current Pulsed
30
A
I
S
Diode Continuous Forward Current
8
A
30V/15A, R
DS(ON)
=48m
(typ.) @ V
GS
=10V
R
DS(ON)
=75m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Package
S
D
G
1
2
3
Top View of SOT-223
G
D
S
1
2
3
Top View of SOT-89
P a c k a g e C o d e
D : S O T -8 9 U : T O -2 5 2 V : S O T -2 2 3
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 C
H a n d lin g C o d e
T R : T a p e & R e e l
A PM 3054N
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
A P M 3 0 5 4 N U :
A P M 3 0 5 4 N
X X X X X
- D a te C o d e
X X X X X
X X X X X - D a te C o d e
A P M 3 0 5 4 N D /V :
A P M 3 0 5 4 N
X X X X X
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
APM3054N
www.anpec.com.tw
2
APM3054N
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
DS
=250
A
30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V, V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
3
V
I
GSS
Gate Leakage Current
V
GS
=
20V, V
DS
=0V
100
nA
V
GS
=10V, I
DS
=12A
48
54
R
DS(ON)
Drain-Source On-state
Resistance
V
GS
=4.5V, I
DS
=6A
75
90
m
V
SD
Diode Forward Voltage
I
SD
=8A, V
GS
=0V
0.6
1.3
V
Dynamic
Q
g
Total Gate Charge
9
Q
gs
Gate-Source Charge
5.4
Q
gd
Gate-Drain Charge
V
DS
=15V, V
GS
=5V,
I
DS
=10A
2.4
nC
t
d(ON)
Turn-on Delay Time
11
t
r
Turn-on Rise Time
17
t
d(OFF)
Turn-off Delay Time
37
t
f
Turn-off Fall Time
V
DD
=15V,I
D
=2A,
V
GS
=10V, R
G
=6
20
ns
C
iss
Input Capacitance
400
C
oss
Output Capacitance
75
C
rss
Reverse Transfer
V
GS
=0V
V
DS
=25V
Frequency=1.0MHz
45
pF
Absolute Maximum Ratings (Cont.)
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
I
SM
Diode Maximum Pulse Current
32
A
TO-252
62.5
T
A
=25C
SOT-223
3
W
TO-252
25
P
D
Maximum Power Dissipation
T
A
=100C
SOT-223
1.2
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
APM3054N
www.anpec.com.tw
3
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
I
D-
Drain Current (A)
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
V
GS
- Gate-to-Source Voltage (V)
0
1
2
3
4
5
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
I
D
-Drain Current (A)
V
GS
=5V
V
GS
=6,7,8,9,10V
V
GS
=3V
V
GS
=4V
-50
-25
0
25
50
75
100 125 150
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Threshold Voltage vs. Temperature
Tj - Junction Temperature (C)
V
GS(th)-
Threshold V
oltage (V)
(Normalzed)
I
DS
=250uA
0
2
4
6
8
10
0.00
0.02
0.04
0.06
0.08
0.10
0.12
R
DS
(on)-On-Resistance (
)
On-Resistance vs. Drain Current
V
GS
=4.5V
I
D
- Drain Current (A)
V
GS
=10V
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
APM3054N
www.anpec.com.tw
4
Typical Characteristics
2
3
4
5
6
7
8
9
10
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
V
GS
- Gate-to-Source Voltage (V)
R
DS
(on)-On-Resistance (
)
I
D
=6A
On-Resistance vs. Gate-to-Source Voltage
-50
-25
0
25
50
75
100
125
150
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
R
DS
(on)-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
V
GS
=10V
I
D
=12A
T
J
- Junction Temperature (C)
-50
-25
0
25
50
75
100 125 150
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
R
DS
(on)-On-Resistance (
)
On-Resistance vs. Junction Temperature
V
GS
=10V
I
DS
=12A
T
J
- Junction Temperature (C)
2.5
5.0
7.5
10.0
12.5
15.0
0
2
4
6
8
10
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
-Gate-Source V
oltage (V)
V
DS
=15V
I
DS
=10A
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
APM3054N
www.anpec.com.tw
5
Typical Characteristics
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1
10
Source-Drain Diode Forward Voltage
I
S
-Source Current (A)
T
J
=150C
T
J
=25C
V
SD
-Source-to-Drain Voltage (V)
30
V
DS
- Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
0
125
250
375
500
625
750
Crss
Coss
Ciss
1E-3
0.01
0.1
1
10
100
1000
0
50
100
150
200
250
Power (W)
Single Pulse Power
Time (sec)
TO-252
Capacitance
Capacitance (pF)
0.01
0.1
1
10
100
1000
0
20
40
60
80
100
120
140
Power (W)
Single Pulse Power
Time (sec)
SOT-223
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