N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Switching Regulators
Switching Converters
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
I
D
*
Maximum Drain Current Continuous
30
I
DM
Maximum Drain Current Pulsed
70
A
* Surface Mounted on FR4 Board, t
10 sec.
30V/30A, R
DS(ON)
=15m
(typ.) @ V
GS
=10V
R
DS(ON)
=22m
(typ.) @ V
GS
=5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252.TO-220 and SOT-223 Packages
P a c k a g e C o d e
U : T O -2 5 2 V : S O T -2 2 3 F : T O -2 2 0
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 C
H a n d lin g C o d e
T R : T a p e & R e e l
A PM 3023N
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
- D a te C o d e
X X X X X
X X X X X - D a te C o d e
A P M 3 0 2 3 N V :
A P M 3 0 2 3 N
X X X X X
A P M 3 0 2 3 N U /F :
:
A P M 3 0 2 3 N
X X X X X
1
2
3
S
D
G
TO-220 Package
G
D
S
1
2
3
Top View of TO-252
S
D
G
1
2
3
Top View of SOT-223
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
2
Absolute Maximum Ratings (Cont.)
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
TO-252/TO-220
62.5
T
A
=25C
SOT-223
3
W
TO-252/TO220
25
P
D
Maximum Power Dissipation
T
A
=100C
SOT-223
1.2
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
APM3023N
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
30
V
V
DS
=24V , V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V, V
GS
=0V, T
j
= 55
C
5
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
1.5
2
V
I
GSS
Gate Leakage Current
V
GS
=
20V , V
DS
=0V
100
nA
V
GS
=10V , I
DS
=20A
15
20
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=5V , I
DSs
=10A
22
28
m
V
SD
a
Diode Forward Voltage
I
SD
=15A , V
GS
=0V
0.7
1.3
V
Dynamic
b
Q
g
Total Gate Charge
15
20
Q
gs
Gate-Source Charge
5.8
Q
gd
Gate-Drain Charge
V
DS
=15V , I
DS
= 10A
V
GS
=5V ,
3.8
nC
t
d(ON)
Turn-on Delay Time
11
18
T
r
Turn-on Rise Time
17
26
t
d(OFF)
Turn-off Delay Time
37
54
T
f
Turn-off Fall Time
V
DD
=15V , I
DS
=2A ,
V
GEN
=10V , R
G
=6
20
30
ns
C
iss
Input Capacitance
1200
C
oss
Output Capacitance
220
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
100
pF
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
3
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
0
5
10
15
20
25
30
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
-50 -25
0
25
50
75
100 125 150
0.
4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
0
5
10
15
20
25
30
V
GS
=5,6,7,8,9,10V
V
GS
=3V
V
GS
=4V
V
DS
=10V
T
J
=125
C
T
J
=25
C
T
J
=-55
C
I
DS
=250
A
V
GS
=10V
V
GS
=5V
Typical Characteristics
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
On-Resistance vs. Drain Current
I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
4
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (
)
Gate Voltage (V)
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On-Resistance (
)
(Normalized)
T
j
-Junction Temperature (
C)
Gate Charge
Q
G
-Total Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
0
5
10
15
20
25
30
0
2
4
6
8
10
100
1000
2000
500
0.1
1
10
30
-50 -25
0
25
50
75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
V
GS
=10V
I
D
=12A
I
DS
=20A
V
DS
=15V
I
DS
=10A
Crss
Coss
Ciss
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
0.0 0.2
0.4
0.6
0.8
1.0
1.2 1.4
0.1
1
10
100
SOT-223
T
J
=-55
C
T
J
=25
C
T
J
=125
C
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage
Time (sec)
Single Pulse Power
TO-252 / TO-220
Power (W)
Time (sec)
Single Pulse Power
Power (W)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
2
Typical Characteristics (Cont.)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=42C/W
3.T
JM
-T
A
=P
DM
Z
thJA
SOT-223
Square Wave Pulse Duration (sec)
Normalized Ef
fective T
ransient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
TO-252 / TO-220
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
7
Package Information
TO-252( Reference JEDEC Registration TO-252)
Millimet ers
Inches
Dim
Min .
Max.
Min .
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
E
6.35
6.73
0.250
0.265
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
0.020
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
L2
D
L1
b
b2
E
C1
A
H
L
C
A1
e1
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
8
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
B1
D
H
E
K
e
e1
A
c
L
A1
a
B
b
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
1.50
1.80
0.06
0.07
A1
0.02
0.08
B
0.60
0.80
0.02
0.03
B1
2.90
3.10
0.11
0.12
c
0.28
0.32
0.01
0.01
D
6.30
6.70
0.25
0.26
E
3.30
3.70
0.13
0.15
e
2.3 BSC
0.09 BSC
e1
4.6 BSC
0.18 BSC
H
6.70
7.30
0.26
0.29
L
0.91
1.10
0.04
0.04
K
1.50
2.00
0.06
0.08
0
10
0
10
13
13
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
9
TO-220 ( Reference JEDEC Registration TO-220)
Q
D
R
E
F
J1
e
e1
b1
L1
A
c
b
H1
L
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
3.56
4.83
0.140
0.190
b1
1.14
1.78
0.045
0.070
b
0.51
1.14
0.020
0.045
c
0.31
1.14
0.012
0.045
D
14.23
16.51
0.560
0.650
e
2.29
2.79
0.090
0.110
e1
4.83
5.33
0.190
0.210
E
9.65
10.67
0.380
0.420
F
0.51
1.40
0.020
0.055
H1
5.84
6.86
0.230
0.270
J1
2.03
2.92
0.080
0.115
L
12.7
14.73
0.500
0.580
L1
3.65
6.35
0.143
0.250
R
3.53
4.09
0.139
0.161
Q
2.54
3.43
0.100
0.135
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
10
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition
(IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
temperature
Classification Reflow Profiles
Convection or IR/
Convection
VPR
Average ramp-up rate(183
C to Peak)
3
C/second max.
10
C /second max.
Preheat temperature 125 25
C)
120 seconds max
Temperature maintained above 183
C
60 150 seconds
Time within 5
C of actual peak temperature 10 20 seconds
60 seconds
Peak temperature range
220 +5/-0
C or 235 +5/-0
C 215-219
C or 235 +5/-0
C
Ramp-down rate
6
C /second max.
10
C /second max.
Time 25
C to peak temperature
6 minutes max.
Package Reflow Conditions
pkg. thickness
2.5mm
and all bgas
pkg. thickness < 2.5mm and
pkg. volume
350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0
C
Convection 235 +5/-0
C
VPR 215-219
C
VPR 235 +5/-0
C
IR/Convection 220 +5/-0
C
IR/Convection 235 +5/-0
C
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
11
Carrier Tape
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Reliability test program
Application
A
B
C
J
T1
T2
W
P
E
330
3
100
2
13
0. 5
2
0.5 16.4 + 0.3
-0.2 2.5
0.5
16+ 0.3
- 0.1
8
0.1 1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
TO-252
7.5
0.1 1.5 +0.1 1.5
0.25 4.0
0.1 2.0
0.1 6.8
0.1 10.4
0.1 2.5
0.1 0.3
0.05
Application
A
B
C
J
T1
T2
W
P
E
330
1
62
1.5
12.75
0.15
2
0.6 12.4 +0.2
2
0.2
12
0.3
8
0.1 1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
SOT-223
5.5
0.05 1.5+ 0.1 1.5+ 0.1 4.0
0.1 2.0
0.05 6.9
0.1 7.5
0.1 2.1
0.1 0.3
0.05
Copyright
ANPEC Electronics Corp.
Rev. A.6 - July., 2003
APM3023N
www.anpec.com.tw
12
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
SOT- 223
12
9.3
2500
Cover Tape Dimensions
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
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