P-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
-30V/-11A, R
DS(ON)
= 17m
(typ.) @ V
GS
= -10V
R
DS(ON)
= 24m
(typ.) @ V
GS
= -5V
Super High Density Cell Design
Reliable and Rugged
TO-252 Package
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
-30
V
GSS
Gate-Source Voltage
20
V
I
D
*
Maximum Drain Current Continuous
-40
I
DM
Maximum Drain Current Pulsed
-70
A
T
A
=25 C
50
P
D
Maximum Power Dissipation
T
A
=100 C
20
W
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
A P M 302 0P
H a n d lin g C o d e
T e m p. R a n g e
P a c ka g e C o d e
P a c k a g e C o d e
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
A P M 3 0 2 0 P U :
A P M 3 0 2 0 P
X X X X X
X X X X X - D a te C o d e
Top View of TO-252
G
D
S
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
JC
Thermal Resistance Junction to Case
2.5
C/W
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
APM3020P
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V , I
DS
=-250A
-30
V
I
DSS
Zero Gate Voltage Drain Current V
DS
=-24V , V
GS
=0V
-1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=-250
A
-1
-3
V
I
GSS
Gate Leakage Current
V
GS
=20V , V
DS
=0V
100
nA
V
GS
=-10V , I
DS
=-11A
17
20
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=-5V , I
DS
=-7A
24
30
m
V
SD
a
Diode Forward Voltage
I
SD
=-11A, V
GS
=0V
-1.3
-1.3
V
Dynamic
b
Q
g
Total Gate Charge
23
30
Q
gs
Gate-Source Charge
10
Q
gd
Gate-Drain Charge
V
DS
=-15V , V
GS
=-4.5V,
I
DS
=-4.6A
9
nC
t
d(ON)
Turn-on Delay Time
16
30
T
r
Turn-on Rise Time
22
30
t
d(OFF)
Turn-off Delay Time
75
120
T
f
Turn-off Fall Time
V
DD
=-15V , I
DS
=-6A ,
V
GEN
=-10 V , R
G
=1
R
L
=2.5
31
80
ns
C
iss
Input Capacitance
3720
C
oss
Output Capacitance
580
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=-25V
Frequency=1.0MHz
245
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
500s, duty cycle 2%
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
3
0
1
2
3
4
5
0
10
20
30
40
50
0
2
4
6
8
10
0
10
20
30
40
50
0
5
10
15
20
25
30
0.005
0.010
0.015
0.020
0.025
0.030
0.035
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Typical Characteristics
Output Characteristics
-V
DS
-Drain-to-Source Voltage (V)
-I
DS
-Drain Current (A)
V
GS
=4,5,6,7,8,9,10V
V
GS
=3V
Transfer Characteristics
-V
GS
-Gate-to-Source Voltage (V)
-I
DS
-Drain Current (A)
T
J
=125
C
T
J
=25
C
T
J
=-55
C
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
C)
-V
GS(th)
-Threshold V
oltage (V)
(Normalized)
-I
DS
=250
A
On-Resistance vs. Drain Current
-I
DS
-Drain Current (A)
R
DS(ON)
-On-Resistance (
)
-V
GS
=10V
-V
GS
=5V
V
GS
=2.5V
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
4
0
5
10
15
20
25
30
0
500
1000
1500
2000
2500
3000
0
10
20
30
40
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0
2
4
6
8
10
0.00
0.03
0.06
0.09
0.12
0.15
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
R
DS (ON)
-On-Resistance (
)
-V
GS
- Gate-to-Source Voltage (V)
-I
DS
=7A
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On-Resistance (
)
(Normalized)
T
j
-Junction Temperature (
C)
-V
GS
=10V
-I
DS
=11A
Gate Charge
Q
G
-Total Gate Charge (nC)
-V
GS
-Gate-to-Source V
oltage (V)
-V
DS
=15V
-I
DS
=4.6A
Capacitance Characteristics
-V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
Copyright ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
5
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
0 .0 1
0 .1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
50
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
-I
SD
-Source Current (A)
-V
SD
-Source-to-Drain Voltage (V )
T
J
=25
C
T
J
=150
C
Time (sec)
Single Pulse Power
Power (W)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient
D=0.1
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.2
Duty Cycle=0.5
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