N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM3007NU
APM3007N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM3007N U :
APM3007N
XXXXX
XXXXX - Date Code
Lead Free Code
Pin Description
Ordering and Marking Information
Features
Applications
30V/50A,
R
DS(ON)
=5.5m
(typ.) @ V
GS
=10V
R
DS(ON)
=8.5m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Power Management in Desktop Computer or
DC/DC Converters
Top View of TO-252
N-Channel MOSFET
G
D
S
G
S
D
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
2
APM3007NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25C Unless Otherwise Noted)
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
20
V
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
I
S
Diode Continuous Forward Current
T
C
=25C
27
A
Mounted on Large Heat Sink
T
C
=25C
100
I
DP
300s Pulse Drain Current Tested
T
C
=100C
75
A
T
C
=25C
50*
I
D
Continuous Drain Current
T
C
=100C
30
A
T
C
=25C
50
P
D
Maximum Power Dissipation
T
C
=100C
20
W
R
JC
Thermal Resistance-Junction to Case
2.5
C/W
Mounted on PCB of 1in
2
Pad
Area
T
A
=25C
100
I
DP
300s Pulse Drain Current Tested
T
A
=100C
75
A
T
A
=25C
15
I
D
Continuous Drain Current
T
A
=100C
10
A
T
A
=25C
2.5
P
D
Maximum Power Dissipation
T
A
=100C
1
W
R
JA
Thermal Resistance-Junction to Ambient
50
C/W
Mounted on PCB of Minimum Footprint
T
A
=25C
100
I
DP
300s Pulse Drain Current Tested
T
A
=100C
75
A
T
A
=25C
12
I
D
Continuous Drain Current
T
A
=100C
8
A
T
A
=25C
1.6
P
D
Maximum Power Dissipation
T
A
=100C
0.6
W
R
JA
Thermal Resistance-Junction to Ambient
75
C/W
Note:
* Current limited by bond wire.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
3
APM3007NU
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
APM3007NU
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
I
D
=11A, V
DD
=15V
30
mJ
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
A
30
V
V
DS
=24V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85C
30
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
1.5
2
V
I
GSS
Gate Leakage Current
V
GS
=20V, V
DS
=0V
100
nA
V
GS
=10V, I
DS
=40A
5.5
7
R
DS(ON)
a
Drain-Source On-state Resistance
V
GS
=4.5V, I
DS
=20A
8.5
10
m
Diode Characteristics
V
SD
a
Diode Forward Voltage
I
SD
=15A, V
GS
=0V
0.8
1.3
V
Dynamic
Characteristics
b
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
1.1
C
iss
Input Capacitance
2440
C
oss
Output Capacitance
420
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
250
pF
t
d(ON)
Turn-on Delay Time
13
20
T
r
Turn-on Rise Time
9
15
t
d(OFF)
Turn-off Delay Time
43
66
T
f
Turn-off Fall Time
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
14
28
ns
Gate Charge
Characteristics
b
Q
g
Total Gate Charge
53
70
Q
gs
Gate-Source Charge
13
Q
gd
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
DS
=40A
10
nC
Notes:
a : Pulse test ; pulse width
300
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
4
APM3007NU
1E-4 1E-3 0.01
0.1
1
10
100
0.01
0.1
1
2
Mounted on 1in
2
pad
R
JA
:50
o
C/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
Power Dissipation
P
tot
- Power (W)
T
j
- Junction Temperature (C)
I
D
- Drain Current (A)
Drain Current
T
j
- Junction Temperature (C)
Safe Operation Area
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
0
20 40 60 80 100 120 140 160 180
0
10
20
30
40
50
60
T
C
=25
o
C
0
20 40 60 80 100 120 140 160 180
0
10
20
30
40
50
60
T
C
=25
o
C,V
G
=10V
0.1
1
10
100
0.1
1
10
100
300
1s
10ms
100ms
DC
Rds(on) Limit
T
c
=25
o
C
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
5
APM3007NU
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
R
DS(ON)
- On - Resistance (m
)
Drain-Source On Resistance
I
D
- Drain Current (A)
Transfer Characteristics
V
GS
- Gate - Source Voltage (V)
I
D
- Drain Current (A)
T
j
- Junction Temperature (C)
Gate Threshold Voltage
Normalized Threshold Vlotage
Typical Characteristics (Cont.)
0
20
40
60
80
100
0
2
4
6
8
10
12
14
16
V
GS
=4.5V
V
GS
=10V
0
1
2
3
4
5
6
0
10
20
30
40
50
60
70
80
90
100
T
j
=-55
o
C
T
j
=25
o
C
T
j
=125
o
C
-50 -25
0
25
50
75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
DS
=250
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
60
70
80
90
100
3V
V
GS
=4,5,6,7,8,9,10V
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