N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2512N
Pin Description
Ordering and Marking Information
Features
Applications
25V/40A , R
DS(ON)
=9m
(typ.) @ V
GS
=10V
R
DS(ON)
=13m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-252 Package
Power Management in Computer, Portable
Equipment and Battery Powered Systems.
Top View of TO-252
APM2512N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150 C
Handling Code
TR : Tape & Reel
L : Lead Free Code
L : Lead Free Device Blank : Original Device
APM2512N U :
XXXXX - Date Code
APM2512N
XXXXX
Lead Free Code
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol Parameter Rating
Unit
V
DSS
Drain-Source
Voltage
25
V
GSS
Gate-Source
Voltage
20
V
G
S
D
N-Channel MOSFET
G
D
S
1
2
3
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw
2
APM2512N
Symbol Parameter Rating
Unit
I
D
Maximum Drain Current Continuous
40
I
DM
Maximum Pulsed Drain Current ( pulse width
300
s)
90
A
T
c
=25
C
50
P
D
Maximum Power Dissipation
T
c
=100
C
20
W
T
J
,T
STG
Maximum Operating and Storage Junction Temperature
-55 to 150
C
R
JA
*
Thermal Resistance Junction to Ambient
50
R
JC
Thermal Resistance Junction to Case
2.5
C/W
* Mounted on 1in
2
pad area of PCB.
APM2512N
Symbol Parameter
Test
Condition
Min.
Typ. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
25 V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=20V , V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1 1.5 2 V
I
GSS
Gate Leakage Current
V
GS
=
20V , V
DS
=0V
100
nA
V
GS
=10V , I
DS
=20A
9 12
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=4.5V , I
DS
=10A
13 20
m
V
SD
a
Diode Forward Voltage
I
SD
=10A , V
GS
=0V
0.9
1.3 V
Dynamic
b
Q
g
Total Gate Charge
28 38
Q
gs
Gate-Source Charge
3.6
Q
gd
Gate-Drain Charge
V
DS
=15V , I
DS
= 10A
V
GS
=10V ,
8.4
nC
t
d(ON)
Turn-on Delay Time
10 20
T
r
Turn-on Rise Time
15 25
t
d(OFF)
Turn-off Delay Time
35 50
T
f
Turn-off Fall Time
V
DD
=10V , I
DS
=10A ,
V
GEN
=10V , R
G
=6
15 20
ns
C
iss
Input Capacitance
1560
C
oss
Output Capacitance
345
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
245
pF
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings (Cont.)
(T
C
= 25
C unless otherwise noted)
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw
3
APM2512N
Typical Characteristics
I
D-
Drain Current (A)
Transfer Characteristics
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
V
GS(th)-
Threshold V
oltage
(Normalized)
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Drain Current
I
D
- Drain Current (A)
Output Characteristics
I
D
-Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
35
40
T
j
=125
o
C
T
j
=25
o
C
T
j
=-55
o
C
-50
-25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
DS
=250
A
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
V
GS
=3V
V
GS
=4V
V
GS
=3.5V
V
GS
=2.5V
V
GS
=5,6,7,8,9,10V
0
5
10
15
20
25
30
35
40
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
0.022
0.024
V
GS
=10V
V
GS
=4.5V
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw
4
APM2512N
Typical Characteristics
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Gate-to-Source Voltage
R
DS(ON)
-On-Resistance
(Normalized)
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (C)
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
-Gate-Source V
oltage (V)
-50
-25
0
25
50
75
100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
ON
@Tj = 25
C: 9m
V
GS
= 10V
I
DS
= 20A
0
5
10
15
20
25
30
0
2
4
6
8
10
V
DS
= 15 V
I
DS
= 10A
0
5
10
15
20
25
0
500
1000
1500
2000
2500
3000
Frequency=1MHz
Crss
Coss
Ciss
3
4
5
6
7
8
9
10
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.015
0.016
I
D
=20A
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw
5
APM2512N
Source-Drain Diode Forward Voltage
I
S
-Source Current (A)
V
SD
-Source-to-Drain Voltage (V)
Typical Characteristics
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
40
T
j
=150
o
C
T
j
=25
o
C
1E-4
1E-3
0.01
0.1
1
10
100
300
1E-3
0.01
0.1
1
2
D=0.01
P
D M
t
1
t
2
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
SINGLE PULSE
1.Duty Cycle, D= t1/t2
2.Per Unit Base=R
thJA
=50
o
C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted on 1in
2
pad
1E-4 1E-3
0.01
0.1
1
10
100300
0
100
200
300
400
500
600
700
T
A
=25
o
C
Mounted on 1in
2
pad
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