N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2505NU
APM2505N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2505N U :
APM2505N
XXXXX
XXXXX - Date Code
Lead Free Code
Pin Description
Ordering and Marking Information
Features
Applications
25V/50A,
R
DS(ON)
=4m
(typ.) @ V
GS
=10V
R
DS(ON)
=7m
(typ.) @ V
GS
=4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Power Management in Desktop Computer or
DC/DC Converters
Top View of TO-252
N-Channel MOSFET
G
D
S
G
S
D
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
2
APM2505NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25C Unless Otherwise Noted)
V
DSS
Drain-Source Voltage
25
V
GSS
Gate-Source Voltage
20
V
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
I
S
Diode Continuous Forward Current
T
C
=25C
5
A
Mounted on Large Heat Sink
T
C
=25C
120
I
DP
300s Pulse Drain Current Tested
T
C
=100C
75
A
T
C
=25C
50
*
I
D
Continuous Drain Current
T
C
=100C
30
A
T
C
=25C
50
P
D
Maximum Power Dissipation
T
C
=100C
20
W
R
JC
Thermal Resistance-Junction to Case
2.5
C/W
Mounted on PCB of 1in
2
Pad
Area
T
A
=25C
120
I
DP
300s Pulse Drain Current Tested
T
A
=100C
75
A
T
A
=25C
17
I
D
Continuous Drain Current
T
A
=100C
10
A
T
A
=25C
2.5
P
D
Maximum Power Dissipation
T
A
=100C
1
W
R
JA
Thermal Resistance-Junction to Ambient
50
C/W
Mounted on PCB of Minimum Footprint
T
A
=25C
120
I
DP
300s Pulse Drain Current Tested
T
A
=100C
75
A
T
A
=25C
14
I
D
Continuous Drain Current
T
A
=100C
9
A
T
A
=25C
1.6
P
D
Maximum Power Dissipation
T
A
=100C
0.6
W
R
JA
Thermal Resistance-Junction to Ambient
75
C/W
Note:
* Current limited by bond wire.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
3
APM2505NU
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
APM2505NU
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
A
25
V
V
DS
=20V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85C
30
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
1
1.5
2
V
I
GSS
Gate Leakage Current
V
GS
=20V, V
DS
=0V
100
nA
V
GS
=10V, I
DS
=40A
4
5.5
R
DS(ON)
a
Drain-Source On-state Resistance
V
GS
=4.5V, I
DS
=20A
7
8
m
Diode Characteristics
V
SD
a
Diode Forward Voltage
I
SD
=5A, V
GS
=0V
0.8
1.3
V
Dynamic
Characteristics
b
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
1.3
C
iss
Input Capacitance
4700
C
oss
Output Capacitance
930
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
280
pF
t
d(ON)
Turn-on Delay Time
22
41
T
r
Turn-on Rise Time
16
29
t
d(OFF)
Turn-off Delay Time
150
210
T
f
Turn-off Fall Time
V
DD
=15V, R
L
=15
,
I
DS
=1A, V
GEN
=10V,
R
G
=6
68
82
ns
Gate Charge
Characteristics
b
Q
g
Total Gate Charge
88
114
Q
gs
Gate-Source Charge
12.8
Q
gd
Gate-Drain Charge
V
DS
=25V, V
GS
=10V,
I
DS
=30A
21.2
nC
Notes:
a : Pulse test ; pulse width
300
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
4
APM2505NU
1E-4 1E-3 0.01
0.1
1
10
100
1E-3
0.01
0.1
1
2
Mounted on 1in
2
pad
R
JA
:50
o
C/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
Power Dissipation
P
tot
- Power (W)
T
j
- Junction Temperature (C)
I
D
- Drain Current (A)
Drain Current
T
j
- Junction Temperature (C)
Safe Operation Area
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
0
20 40 60 80 100 120 140 160 180
0
10
20
30
40
50
60
T
C
=25
o
C
0
20
40
60
80 100 120 140 160
0
10
20
30
40
50
60
T
C
=25
o
C,V
G
=10V
0.01
0.1
1
10
100
0.1
1
10
100
300
Rds(on) Limit
1s
T
C
=25
o
C
10ms
100ms
DC
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
www.anpec.com.tw
5
APM2505NU
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
R
DS(ON)
- On - Resistance (m
)
Drain-Source On Resistance
I
D
- Drain Current (A)
Transfer Characteristics
V
GS
- Gate - Source Voltage (V)
I
D
- Drain Current (A)
T
j
- Junction Temperature (C)
Gate Threshold Voltage
Normalized Threshold Vlotage
Typical Characteristics (Cont.)
0
20
40
60
80
100
120
0
2
4
6
8
10
12
V
GS
=4.5V
V
GS
=10V
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
= 250
A
0.0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
120
3V
V
GS
= 4,5,6,7,8,9,10V
0
1
2
3
4
5
6
0
20
40
60
80
100
120
T
j
=-55
o
C
T
j
=125
o
C
T
j
=25
o
C
PDF 
ZIP