N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2055NU
APM2055N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM2055N U :
APM2055N
XXXXX
XXXXX - Date Code
Lead Free Code
Pin Description
Ordering and Marking Information
Features
Applications
20V/10A ,
R
DS(ON)
=55m
(typ.) @ V
GS
=10V
R
DS(ON)
=75m
(typ.) @ V
GS
=4.5V
R
DS(ON)
=140m
(typ.) @ V
GS
=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Power Management in Desktop Computer or
DC/DC Converters
Top View of TO-252
N-Channel MOSFET
G
D
S
G
S
D
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
2
APM2055NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25C Unless Otherwise Noted)
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
16
V
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
I
S
Diode Continuous Forward Current
T
C
=25C
3.5
A
Mounted on Large Heat Sink
T
C
=25C
30
I
DP
300s Pulse Drain Current Tested
T
C
=100C
15
A
T
C
=25C
10
*
I
D
Continuous Drain Current
T
C
=100C
6
A
T
C
=25C
50
P
D
Maximum Power Dissipation
T
C
=100C
20
W
R
JC
Thermal Resistance-Junction to Case
2.5
C/W
Mounted on PCB of 1in
2
Pad
Area
T
A
=25C
30
I
DP
300s Pulse Drain Current Tested
T
A
=100C
15
A
T
A
=25C
2
I
D
Continuous Drain Current
T
A
=100C
1
A
T
A
=25C
2.5
P
D
Maximum Power Dissipation
T
A
=100C
1
W
R
JA
Thermal Resistance-Junction to Ambient
50
C/W
Mounted on PCB of Minimum Footprint
T
A
=25C
30
I
DP
300s Pulse Drain Current Tested
T
A
=100C
15
A
T
A
=25C
2
I
D
Continuous Drain Current
T
A
=100C
1
A
T
A
=25C
1.6
P
D
Maximum Power Dissipation
T
A
=100C
0.6
W
R
JA
Thermal Resistance-Junction to Ambient
75
C/W
Note:
* Current limited by bond wire.
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
3
APM2055NU
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
APM2055NU
Symbol
Parameter
Test Condition
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
A
20
V
V
DS
=16V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85C
30
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
0.6
0.9
1.5
V
I
GSS
Gate Leakage Current
V
GS
=16V, V
DS
=0V
100
nA
V
GS
=10V, I
DS
=12A
55
70
V
GS
=4.5V, I
DS
=6A
75
90
R
DS(ON)
a
Drain-Source On-state Resistance
V
GS
=2.5V, I
DS
=2A
140
160
m
Diode Characteristics
V
SD
a
Diode Forward Voltage
I
SD
=2A, V
GS
=0V
0.7
1.3
V
Dynamic Characteristics
b
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
2.5
C
iss
Input Capacitance
380
C
oss
Output Capacitance
120
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
75
pF
t
d(ON)
Turn-on Delay Time
5
8
T
r
Turn-on Rise Time
13
23
t
d(OFF)
Turn-off Delay Time
16
24
T
f
Turn-off Fall Time
V
DD
=10V, R
L
=10
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
3
5
ns
Gate Charge Characteristics
b
Q
g
Total Gate Charge
5.4
7
Q
gs
Gate-Source Charge
1.4
Q
gd
Gate-Drain Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=12A
1.7
nC
Notes:
a : Pulse test ; pulse width
300
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
4
APM2055NU
Typical Characteristics
Power Dissipation
P
tot
- Power (W)
T
j
- Junction Temperature (C)
I
D
- Drain Current (A)
Drain Current
T
j
- Junction Temperature (C)
Safe Operation Area
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Normalized Transient Thermal Resistance
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
0
20 40 60 80 100 120 140 160 180
0
10
20
30
40
50
60
T
C
=25
o
C
0
20 40 60 80 100 120 140 160 180
0
2
4
6
8
10
12
T
C
=25
o
C,V
G
=10V
0.1
1
10
60
0.1
1
10
100
T
C
=25
o
C
Rds(on) Limit
100ms
1s
1ms
10ms
DC
1E-4 1E-3 0.01
0.1
1
10
100
0.01
0.1
1
2
Mounted on 1in
2
pad
R
JA
:50
o
C/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
5
APM2055NU
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
R
DS(ON)
- On - Resistance (m
)
Drain-Source On Resistance
I
D
- Drain Current (A)
Transfer Characteristics
V
GS
- Gate - Source Voltage (V)
I
D
- Drain Current (A)
T
j
- Junction Temperature (C)
Gate Threshold Voltage
Normalized Threshold Vlotage
Typical Characteristics (Cont.)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
4V
2V
3V
V
GS
=5,6,7,8,9,10V
0
5
10
15
20
25
30
0
20
40
60
80
100
120
140
160
180
200
V
GS
=2.5V
V
GS
=10V
V
GS
=4.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
T
j
=125
o
C
T
j
=25
o
C
T
j
=-55
o
C
-50 -25
0
25
50
75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
DS
=250
A
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
6
APM2055NU
Drain-Source On Resistance
Normalized On Resistance
T
j
- Junction Temperature (C)
V
SD
- Source - Drain Voltage (V)
Source-Drain Diode Forward
I
S
- Source Current (A)
V
DS
- Drain - Source Voltage (V)
C - Capacitance (pF)
Capacitance
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
- Gate-source Voltage (V)
Typical Characteristics (Cont.)
-50 -25
0
25
50
75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
R
ON
@T
j
=25
o
C: 55m
V
GS
= 10V
I
DS
= 12A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
30
T
j
=25
o
C
T
j
=150
o
C
0
4
8
12
16
20
0
100
200
300
400
500
600
700
Frequency=1MHz
Crss
Coss
Ciss
0
2
4
6
8
10
12
0
1
2
3
4
5
6
7
8
9
10
V
DS
=15V
I
D
= 12A
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
7
APM2055NU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
D1
5.2 REF
0.205 REF
E
6.35
6.73
0.250
0.265
E1
5.3 REF
0.209 REF
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
0.020
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
L 2
D
L 1
b
b 2
E
C 1
A
H
L
C
A 1
e 1
D 1
E 1
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
8
APM2055NU
Physical Specifications
t 25 C to Peak
tp
Ramp-up
t
L
Ramp-down
ts
Preheat
Tsmax
Tsmin
T
L
T
P
25
Temperature
Time
Critical Zone
T
L
to T
P
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(T
L
to T
P
)
3
C/second max.
3
C/second max.
Preheat
-
Temperature Min (Tsmin)
-
Temperature Max (Tsmax)
-
Time (min to max) (ts)
100
C
150
C
60-120 seconds
150
C
200
C
60-180 seconds
Time maintained above:
-
Temperature (T
L
)
-
Time (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak/Classificatioon Temperature (Tp)
See table 1
See table 2
Time within 5
C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6
C/second max.
6
C/second max.
Time 25
C to Peak Temperature
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
9
APM2055NU
Test item
Method
Description
SOLDERABILITY
MIL-STD-883D-2003
245C,5 SEC
HOLT
MIL-STD 883D-1005.7
1000 Hrs Bias @ 125C
PCT
JESD-22-B, A102
168 Hrs, 100% RH, 121C
TST
MIL-STD 883D-1011.9
-65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Reliability Test Program
Table 2. Pb-free Process Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350-2000
Volume mm
3
>2000
<1.6 mm
260 +0
C*
260 +0
C*
260 +0
C*
1.6 mm 2.5 mm
260 +0
C*
250 +0
C*
245 +0
C*
2.5 mm
250 +0
C*
245 +0
C*
245 +0
C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
C.
For example 260
C+0
C) at the rated MSL level.
Table 1. SnPb Entectic Process Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350
<2.5 mm
240 +0/-5
C
225 +0/-5
C
2.5 mm
225 +0/-5
C
225 +0/-5
C
Classification Reflow Profiles(Cont.)
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Oct., 2005
www.anpec.com.tw
10
APM2055NU
Application
A
B
C
J
T1
T2
W
P
E
330
3
100
2
13
0. 5
2
0.5
16.4 + 0.3
-0.2
2.5
0.5
16+ 0.3
- 0.1
8
0.1
1.75
0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
TO-252
7.5
0.1
1.5 +0.1 1.5
0.25 4.0
0.1
2.0
0.1
6.8
0.1 10.4
0.1
2.5
0.1
0.3
0.05
Application
Carrier Width
Cover Tape Width
Devices Per Reel
TO- 252
16
13.3
2500
Customer Service
Cover Tape Dimensions
Carrier Tape & Reel Dimensions (Cont.)
A
J
B
T2
T1
C
(mm)
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
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