N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
APM2054ND
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
Switching Regulators
Switching Converters
20V/5A,
R
DS(ON)
=35m
(typ.) @ V
GS
=10V
R
DS(ON)
=45m
(typ.) @ V
GS
=4.5V
R
DS(ON)
=110m
(typ.) @ V
GS
=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
A P M 2 0 5 4 N
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
D : S O T - 8 9
O p e r a tin g J u n c tio n T e m p . R a n g e
C : - 5 5 t o 1 5 0 C
H a n d lin g C o d e
T U : T u b e T R : T a p e & R e e l
L e a d F r e e C o d e
L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e
A P M 2 0 5 4 N D :
A P M 2 0 5 4
X X X X X
X X X X X - D a te C o d e
L e a d F r e e C o d e
N-Channel MOSFET
Top View of SOT-89
G
D
S
G
S
D
(3)
(2)
(1)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
APM2054ND
www.anpec.com.tw
2
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Symbol Parameter Rating
Unit
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
16
V
I
D
*
Continuous Drain Current
5
I
DM
*
Pulsed Drain Current
V
GS
=10V
20
A
I
S
*
Diode Continuous Forward Current
3
A
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
C
T
A
=25C 1.47
P
D
*
Power Dissipation for Single Operation
T
A
=100C
0.58
W
R
JA
*
Thermal Resistance-Junction to Ambient
85
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
10sec.
APM2054ND
Symbol Parameter
Test
Condition
Min. Typ. Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250
A
20 V
V
DS
=16V, V
GS
=0V
1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85C
30
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
0.6 0.9 1.5 V
I
GSS
Gate Leakage Current
V
GS
=16V, V
DS
=0V
100
nA
V
GS
=10V, I
DS
=5A
35
40
V
GS
=4.5V, I
DS
=3.5A
45
54
R
DS(ON)
a
Drain-Source On-state Resistance
V
GS
=2.5V, I
DS
=2.5A
110
130
m
V
SD
a
Diode Forward Voltage
I
SD
=3A, V
GS
=0V
0.7
1.3
V
Dynamic Characteristics
b
t
d(ON)
Turn-on Delay Time
7
10
T
r
Turn-on Rise Time
15
25
t
d(OFF)
Turn-off Delay Time
19
26
T
f
Turn-off Fall Time
V
DD
=10V, R
L
=10
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
6 7
ns
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
APM2054ND
www.anpec.com.tw
3
Electrical Characteristics (Cont.)
(T
A
= 25
C unless otherwise noted)
APM2054ND
Symbol Parameter
Test
Condition
Min. Typ. Max.
Unit
Dynamic Characteristics
b
R
G
Gate
Resistance
V
GS
=0V,V
DS
=0V,F=1MHz 2.5
C
iss
Input
Capacitance
450
C
oss
Output
Capacitance
100
C
rss
Reverse Transfer Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
60
pF
Gate Charge Characteristics
b
Q
g
Total Gate Charge
11.5
15
Q
gs
Gate-Source
Charge
3.8
Q
gd
Gate-Drain
Charge
V
DS
=10V, V
GS
=4.5V,
I
DS
=5A
5.2
nC
Notes:
a : Pulse test ; pulse width
300
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
APM2054ND
www.anpec.com.tw
4
1E-4 1E-3
0.01
0.1
1
10
100
1E-3
0.01
0.1
1
2
Mounted on 1in
2
pad
R
JA
:85
o
C/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Typical Characteristics
Power Dissipation
P
tot
- Power (W)
T
j
- Junction Temperature (C)
Drain Current
T
j
- Junction Temperature
I
D
- Drain Current (A)
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Square Wave Pulse Duration (sec)
Safe Operation Area
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
0
20
40
60
80
100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
A
=25
o
C
0
20
40
60
80
100 120 140 160
0
1
2
3
4
5
6
T
A
=25
o
C,V
G
=10V
0.1
1
10
60
0.01
0.1
1
10
100
100ms
Rd
s(
on
) L
im
it
300
s
T
A
=25
o
C
1s
1ms
10ms
DC
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Apr., 2005
APM2054ND
www.anpec.com.tw
5
-50
-25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
DS
=250
A
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
R
DS(ON)
- On - Resistance (m
)
Drain-Source On Resistance
I
D
- Drain Current (A)
Transfer Characteristics
V
GS
- Gate - Source Voltage (V)
I
D
- Drain Current (A)
T
j
- Junction Temperature (C)
Gate Threshold Voltage
Normalized Threshold V
oltage
Typical Characteristics (Cont.)
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
2V
3V
V
GS
= 4, 5, 6, 7, 8, 9, 10V
0
4
8
12
16
20
0
20
40
60
80
100
120
140
160
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
20
T
j
=125
o
C
T
j
=25
o
C
T
j
=-55
o
C
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