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Электронный компонент: APM2030N

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N-Channel Enhancement Mode MOSFET
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2030N
Pin Description
Ordering and Marking Information
Features
Applications
20V/6A , R
DS(ON)
=35m
(typ.) @ V
GS
=4.5V
R
DS(ON)
=38m
(typ.) @ V
GS
=2.5V


Super High Dense Cell Design for Extremely
Low R
DS(ON)


Reliable and Rugged


TO-252 Package
Power Management in Computer, Portable
Equipment and Battery Powered Systems.
Top View of TO-252
G
D
S
1
2
3
APM2030N
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150 C
Handling Code
TR : Tape & Reel
APM2030N U :
XXXXX - Date Code
APM2030N
XXXXX
Absolute Maximum Ratings
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
20
V
GSS
Gate-Source Voltage
10
V
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw
2
APM2030N
Symbol
Parameter
Rating
Unit
I
D
*
Maximum Drain Current Continuous
20
I
DM
Maximum Drain Current Pulsed
40
A
T
A
=25
C
50
P
D
Maximum Power Dissipation
T
A
=100
C
10
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
jA
Thermal Resistance Junction to Ambient
50
C/W
* Surface Mounted on FR4 Board, t
10 sec.
APM2030N
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
A
20
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=18V , V
GS
=0V
1
A
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
A
0.5
1.5
V
I
GSS
Gate Leakage Current
V
GS
=
10V , V
DS
=0V
100
nA
V
GS
=4.5V , I
DS
=6A
35
40
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=2.5V , I
DS
=2A
38
50
m
V
SD
a
Diode Forward Voltage
I
SD
=4A , V
GS
=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
9
18
Q
gs
Gate-Source Charge
3.6
Q
gd
Gate-Drain Charge
V
DS
=10V , I
DS
= 5A
V
GS
=4.5V ,
1
nC
t
d(ON)
Turn-on Delay Time
17
T
r
Turn-on Rise Time
15
t
d(OFF)
Turn-off Delay Time
45
T
f
Turn-off Fall Time
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
25
ns
C
iss
Input Capacitance
520
C
oss
Output Capacitance
110
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
70
pF
Electrical Characteristics
(T
A
= 25
C unless otherwise noted)
Absolute Maximum Ratings (Cont.)
(T
A
= 25
C unless otherwise noted)
Notes
a
: Pulse test ; pulse width
300
s, duty cycle
2
%
b
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw
3
APM2030N
0
1
2
3
4
5
6
7
8
9 10
0.0250
0.0275
0.0300
0.0325
0.0350
0.0375
0.0400
0.0425
0.0450
0.0475
0.0500
0
1
2
3
4
5
0
5
10
15
20
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
2
4
6
8
10
12
14
16
18
20
Typical Characteristics
2V
I
D-
Drain Current (A)
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
I
DS
=250uA
R
DS(ON)
-On-Resistance (
)
On-Resistance vs. Drain Current
I
D
- Drain Current (A)
V
GS
=4.5V
Output Characteristics
I
D
-Drain Current (A)
V
GS
=2.5,3,4,5,6,7,8,9,10V
1.5V
V
DS
- Drain-to-Source Voltage (V)
V
GS
=2.5V
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw
4
APM2030N
1
2
3
4
5
6
7
8
9
10
0.000
0.025
0.050
0.075
0.100
0.125
0
5
10
15
20
0
125
250
375
500
625
750
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Typical Characteristics
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
-On-Resistance (
)
I
D
=6A
On-Resistance vs. Gate-to-Source Voltage
R
DS(ON)
-On-Resistance (
)
(Normalized)
On-Resistance vs. Junction Temperature
V
GS
=4.5V
I
D
=6A
T
J
- Junction Temperature (C)
V
DS
- Drain-to-Source Voltage (V)
Capacitance
Capacitance (pF)
Ciss
Coss
Crss
Gate Charge
Q
G
- Gate Charge (nC)
V
GS
-Gate-Source V
oltage (V)
V
DS
=10V
I
D
=5A
Frequency=1MHz
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2002
www.anpec.com.tw
5
APM2030N
1E-4
1E-3
0.01
0.1
1
10
100
1000
0.01
0.1
1
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
20
Source-Drain Diode Forward Voltage
I
S
-Source Current (A)
T
J
=150C
T
J
=25C
V
SD
-Source-to-Drain Voltage (V)
Typical Characteristics
Power (W)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50C/W
3.T
JM
-T
A
=P
DM
Z
thJA
1E-3
0.01
0.1
1
10
100
1000
0
50
100
150
200
250