11/2003
Figure 1: Block Diagram
FEATURES
InGaP HBT Technology
Integrated Power Control (CMOS)
Quad Band Applications
+35 dBm GSM Output Power at 3.5 V
+33 dBm DCS/PCS Output Power at 3.5 V
55% GSM850/900 PAE
50% DCS/PCS PAE
Small Footprint 7mm x 7mm
Low Profile 1.3mm
Power Control Range >50 dB
GPRS Capable (class 12)
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
Dual/Tri/Quad Band PDA
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifiers power control range is typically
55 dB, with the output power set by applying an
analog voltage to V
RAMP
. The logical control inputs,
AWT6146
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
ADVANCED PRODUCT INFORMATION - Rev 0.5
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 W. Internal DC blocks are provided at
the RF ports.
18 Pin
7mm x 7mm
Amplifier Module
GSM850/900_IN
V RAMP
VBATT
BS
VREG
TX_EN
DCS/PCS_IN
DCS/PCS_OUT
GSM850/900_OUT
VCC_OUT
V CC2
V CC2
GSM850/900
DCS/PCS
Bias and Power
Control
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
3
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Although protection circuitry has been designed into this device, proper precau-
tions should be taken to avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Human body model HBM employed is resistance = 1500 W,
capacitance = 100 pF.
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
t
l
o
V
y
l
p
p
u
S
T
T
A
B
)
-
7
+
V
F
R
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
1
1
m
B
d
V
(
s
e
g
a
t
l
o
V
l
o
r
t
n
o
C
P
M
A
R
)
3
.
0
-
8
.
1
V
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
5
5
-
0
5
1
C
R
E
T
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M
A
R
A
P
D
O
H
T
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M
S
G
N
I
T
A
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U
)
s
t
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p
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R
(
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g
a
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V
d
l
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h
s
e
r
h
T
D
S
E
M
B
H
0
5
2
>
V
)
s
t
u
p
n
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l
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t
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c
(
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d
l
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s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
4
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
Table 5: Digital Inputs
Table 4: Operating Ranges
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
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T
(
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r
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t
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r
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0
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5
8
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V
(
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3
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.
3
8
.
4
V
V
(
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2
9
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2
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P
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P
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T
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A
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U
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(
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g
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V
h
g
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1
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V
G
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R
V
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(
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g
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V
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t
n
e
r
r
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C
h
g
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A
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
ADVANCED PRODUCT INFORMATION - Rev 0.5
11/2003
AWT6146
5
Table 6: Electrical Characteristics for GSM850
(V
BATT
= 3.5 V, V
REG
= 2.8 V, P
IN
= 3.0 dBm, Pulse Width =1154
m
s, Duty 25%,
Z
IN
= Z
OUT
= 50 W, T
C
= 25 C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
R
E
T
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M
A
R
A
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T
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(
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c
n
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it
a
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4
2
8
-
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4
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z
H
M
r
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o
P
t
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p
n
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0
0
.
3
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m
B
d
P
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w
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P
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p
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M
5
.
4
3
5
3
-
m
B
d
z
H
M
9
4
8
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t
4
2
8
=
q
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r
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d
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m
B
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B
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0
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3
=
C
,
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5
8
=
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7
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2
=
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P
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5
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%
z
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m
B
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T
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z
H
M
9
4
8
=
,
z
H
k
0
0
1
=
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B
R
F
X
R
,
z
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M
4
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t
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