05/2002
AWT6114
KPCS CDMA 3.4V/28dBm
Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.0
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
FEATURES
InGaP HBT Technology
High Efficiency: 37%
Low Quiescent Current: 55 mA
Low Leakage Current in Shutdown Mode: <5
A
Optimized for a 50
System
Low Profile Miniature Surface Mount Package
CDMA 1XRTT Compliant
CDMA 1xEV-DO Compliant
APPLICATIONS
Korean Band PCS CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6114 is a high power, high efficiency
amplifier module for Korean Band PCS CDMA
wireless handset applications. The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different
output power levels, and a shutdown mode with low
leakage current, serve to increase handset talk and
standby time. The self-contained 4mm x 4mm
surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50
system.
Figure 1: Block Diagram
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
2
ADVANCED PRODUCT INFORMATION - Rev 0.0
05/2002
AWT6114
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
V
CC
RF
OUT
V
REF
RF
IN
V
MODE
GND
1
GND
10
2
3
4
5
6
9
8
7
V
CC
GND
GND
GND
GND
N
I
P
E
M
A
N
N
O
I
T
P
I
R
C
S
E
D
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
2
F
R
N
I
t
u
p
n
I
F
R
3
D
N
G
d
n
u
o
r
G
4
V
E
D
O
M
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
5
V
F
E
R
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
6
D
N
G
d
n
u
o
r
G
7
D
N
G
d
n
u
o
r
G
8
F
R
T
U
O
t
u
p
t
u
O
F
R
9
D
N
G
d
n
u
o
r
G
0
1
V
C
C
e
g
a
tl
o
V
y
l
p
p
u
S
ADVANCED PRODUCT INFORMATION - Rev 0.0
05/2002
AWT6114
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
0
5
+
V
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
0
5
.
3
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
0
5
.
3
+
V
P
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
-
0
1
+
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
0
4
-
0
5
1
+
C
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
)
f
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
0
5
7
1
-
0
8
7
1
z
H
M
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
C
C
)
0
.
3
+
4
.
3
+
2
.
4
+
V
V
(
e
g
a
tl
o
V
e
c
n
e
r
e
f
e
R
F
E
R
)
5
7
.
2
+
0
5
8
.
2
+
-
1
.
3
+
5
.
0
+
V
"
n
o
"
A
P
"
n
w
o
d
t
u
h
s
"
A
P
V
(
e
g
a
tl
o
V
l
o
r
t
n
o
C
e
d
o
M
E
D
O
M
)
5
.
2
+
0
5
8
.
2
+
-
1
.
3
+
5
.
0
+
V
e
d
o
M
s
a
i
B
w
o
L
e
d
o
M
s
a
i
B
h
g
i
H
P
(
r
e
w
o
P
t
u
p
t
u
O
F
R
T
U
O
)
-
0
.
8
2
+
-
m
B
d
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
3
-
-
0
1
1
+
o
C
4
ADVANCED PRODUCT INFORMATION - Rev 0.0
05/2002
AWT6114
Table 4: Electrical Specifications
(T
C
= +25 C, V
CC
= +3.4 V, V
REF
= +2.85 V, 50
system)
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
n
i
a
G
-
-
9
2
7
2
-
-
B
d
P
=
T
U
O
V
,
m
B
d
8
2
+
E
D
O
M
V
0
=
P
=
T
U
O
V
,
m
B
d
6
1
+
E
D
O
M
V
5
8
.
2
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
t
e
s
ff
o
z
H
M
5
2
.
1
t
a
z
H
M
3
2
.
1
=
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
2
5
-
8
4
-
-
-
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
=
T
U
O
V
,
m
B
d
6
1
+
E
D
O
M
V
5
8
.
2
+
=
r
e
w
o
P
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
t
e
s
ff
o
z
H
M
5
2
.
2
t
a
z
H
M
3
2
.
1
=
W
B
l
e
n
n
a
h
C
y
r
a
m
ir
P
z
H
k
0
3
=
W
B
l
e
n
n
a
h
C
t
n
e
c
a
j
d
A
-
-
9
5
-
2
6
-
-
-
B
d
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
=
T
U
O
V
,
m
B
d
6
1
+
E
D
O
M
V
5
8
.
2
+
=
y
c
n
e
i
c
if
f
E
d
e
d
d
A
-
r
e
w
o
P
-
-
7
3
5
.
7
-
-
%
P
T
U
O
V
,
m
B
d
8
2
+
=
E
D
O
M
V
0
=
P
=
T
U
O
V
,
m
B
d
6
1
+
E
D
O
M
V
5
8
.
2
+
=
)
q
c
I
(
t
n
e
r
r
u
C
t
n
e
c
s
e
i
u
Q
-
5
5
-
A
m
V
E
D
O
M
V
5
8
.
2
+
=
t
n
e
r
r
u
C
e
c
n
e
r
e
f
e
R
-
7
0
1
A
m
V
h
g
u
o
r
h
t
F
E
R
n
i
p
t
n
e
r
r
u
C
l
o
r
t
n
o
C
e
d
o
M
-
5
3
.
0
7
.
0
A
m
V
h
g
u
o
r
h
t
E
D
O
M
n
i
p
t
n
e
r
r
u
C
e
g
a
k
a
e
L
-
5
<
-
A
V
C
C
,
V
4
.
3
+
=
V
F
E
R
,
V
0
=
V
E
D
O
M
V
0
=
d
n
a
B
e
v
i
e
c
e
R
n
i
e
s
i
o
N
-
5
3
1
-
-
z
H
/
m
B
d
z
H
M
0
7
8
1
o
t
z
H
M
0
4
8
1
s
c
i
n
o
m
r
a
H
o
f
2
o
f
4
,
o
f
3
-
-
1
4
-
5
6
-
0
3
-
0
3
-
c
B
d
e
c
n
a
d
e
p
m
I
t
u
p
n
I
-
-
1
:
2
R
W
S
V
l
e
v
e
L
t
u
p
t
u
O
s
u
o
ir
u
p
S
)
s
t
u
p
t
u
o
s
u
o
ir
u
p
s
ll
a
(
-
-
0
7
-
c
B
d
P
T
U
O
<
m
B
d
8
2
+
1
:
8
<
R
W
S
V
d
a
o
l
d
n
a
b
-
n
I
1
:
8
<
R
W
S
V
d
a
o
l
d
n
a
b
-
f
o
-
t
u
O
d
n
a
e
g
a
tl
o
v
ll
a
r
e
v
o
s
e
il
p
p
A
s
e
g
n
a
r
g
n
it
a
r
e
p
o
e
r
u
t
a
r
e
p
m
e
t
o
n
h
ti
w
s
s
e
r
t
s
h
c
t
a
m
s
i
m
d
a
o
L
e
r
u
li
a
f
r
o
n
o
it
a
d
a
r
g
e
d
t
n
e
n
a
m
r
e
p
1
:
8
-
-
R
W
S
V
V
C
C
P
,
V
0
.
5
+
=
N
I
m
B
d
5
+
=
g
n
it
a
r
e
p
o
ll
u
f
r
e
v
o
s
e
il
p
p
A
e
g
n
a
r
e
r
u
t
a
r
e
p
m
e
t
ADVANCED PRODUCT INFORMATION - Rev 0.0
05/2002
AWT6114
5
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the V
REF
and V
MODE
voltages.
Table 5: Bias Control
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
N
O
I
T
A
C
I
L
P
P
A
P
T
U
O
S
L
E
V
E
L
S
A
I
B
E
D
O
M
V
F
E
R
V
E
D
O
M
r
e
w
o
p
w
o
l
-
A
M
D
C
<
m
B
d
6
1
+
w
o
L
V
5
8
.
2
+
V
5
8
.
2
+
r
e
w
o
p
h
g
i
h
-
A
M
D
C
m
B
d
6
1
+
>
h
g
i
H
V
5
8
.
2
+
V
0
n
w
o
d
t
u
h
S
-
n
w
o
d
t
u
h
S
V
0
V
0
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