01/2006
AWT6108R
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
20 Pin 7 mm x 10 mm x 1.4 mm
Surface Mount Module
FEATURES
InGaP HBT Technology
Integrated Power Control (CMOS)
Quad Band Applications
+35 dBm GSM Output Power at 3.5 V
+33 dBm DCS/PCS Output Power at 3.5 V
55% GSM PAE
50% DCS/PCS PAE
Small Footprint: 7 x 10 mm
Low Profile: 1.4 mm
Power Control Range: >50 dB
GPRS Capable (Class 12)
RoHS Compliant Package, 250
o
C MSL-3
APPLICATIONS
GSM850/GSM900/DCS/PCS Handsets
Dual/Tri/Quad Band PDA
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifier's power control range is typically
55dB, with the output power set by applying an
analog voltage to V
RAMP
. The logical control inputs,
Figure 1: Block Diagram
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50
. Internal DC blocks are provided at
the RF ports.
AWT6108R
PRELIMINARY DATA SHEET - Rev 1.0
01/2006
AWT6108R
3
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
R
E
T
E
M
A
R
A
P
N
I
M
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
T
T
A
B
)
0
7
V
F
R
(
r
e
w
o
P
t
u
p
n
I
F
R
N
I
)
0
1
1
m
B
d
V
(
e
g
a
tl
o
V
l
o
rt
n
o
C
)
P
M
A
R
3
.
0
-
8
.
1
V
T
(
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
G
T
S
)
5
5
-
0
5
1
C
Table 3: ESD Ratings
R
E
T
E
M
A
R
A
P
D
O
H
T
E
M
G
N
I
T
A
R
T
I
N
U
)
s
tr
o
P
F
R
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
0
5
2
>
V
)
s
t
u
p
n
I
l
o
rt
n
o
C
(
e
g
a
tl
o
V
d
l
o
h
s
e
r
h
T
D
S
E
M
B
H
5
.
2
>
V
k
Although protection circuitry has been designed into this device, proper precautions
should be taken to avoid exposure to electronic discharge (ESD) during handling
and mounting. Human body model (HBM) employed is resistance = 1500
,
capacitance = 100 pF.
4
PRELIMINARY DATA SHEET - Rev 1.0
01/2006
AWT6108R
Table 4: Digital Inputs
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
V
(
e
g
a
tl
o
V
h
g
i
H
c
i
g
o
L
H
)
2
.
1
-
V
G
E
R
V
V
(
e
g
a
tl
o
V
w
o
L
c
i
g
o
L
L
)
-
-
5
.
0
V
I(
t
n
e
r
r
u
C
h
g
i
H
c
i
g
o
L
H
)
-
-
0
3
A
I(
t
n
e
r
r
u
C
w
o
L
c
i
g
o
L
L
)
-
-
0
3
A
Table 5: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
T
(
e
r
u
t
a
r
e
p
m
e
T
e
s
a
C
C
)
0
2
-
-
5
8
o
C
V
(
e
g
a
tl
o
V
y
l
p
p
u
S
T
T
A
B
)
0
.
3
5
.
3
5
.
5
V
V
(
e
g
a
tl
o
V
d
e
t
a
l
u
g
e
R
G
E
R
)
7
.
2
8
.
2
9
.
2
V
I(
t
n
e
r
r
u
C
d
e
t
a
l
u
g
e
R
G
E
R
)
H
G
I
H
=
N
E
_
X
T
W
O
L
=
N
E
_
X
T
-
-
6
0
1
8
0
3
A
m
A
m
u
m
i
x
a
M
r
o
f
e
g
a
tl
o
V
l
o
rt
n
o
C
V
(
r
e
w
o
P
X
A
M
_
P
M
A
R
)
-
-
6
.
1
V
m
u
m
i
n
i
M
r
o
f
e
g
a
tl
o
V
l
o
rt
n
o
C
V
(
r
e
w
o
P
N
I
M
_
P
M
A
R
)
-
2
.
0
5
2
.
0
V
t
n
e
r
r
u
C
e
g
a
k
a
e
L
y
l
p
p
u
S
r
e
w
o
P
-
1
0
1
A
V
T
T
A
B
V
,
V
5
.
5
=
G
E
R
,
V
0
=
V
P
M
A
R
,
W
O
L
=
N
E
_
X
T
,
V
0
=
d
e
il
p
p
A
F
R
o
N
V
P
M
A
R
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
-
3
-
F
p
V
P
M
A
R
t
n
e
r
r
u
C
t
u
p
n
I
-
-
0
1
A
V
P
M
A
R
V
=
X
A
M
_
P
M
A
R
e
m
i
T
ff
O
/
n
O
n
r
u
T
-
1
2
s
V
P
M
A
R
V
o
t
V
2
.
0
=
X
A
M
_
P
M
A
R
e
l
c
y
C
y
t
u
D
-
-
0
5
%
PRELIMINARY DATA SHEET - Rev 1.0
01/2006
AWT6108R
5
Table 6: Electrical Characteristics for GSM850/900
(V
BATT
= 3.5 V, V
REG
= 2.8 V, P
IN
= 2.0 dBm, Pulse Width = 1154 s, Duty 25%,
Z
IN
= Z
OUT
= 50
, T
C
= 25
C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
R
E
T
E
M
A
R
A
P
N
I
M
P
Y
T
X
A
M
T
I
N
U
S
T
N
E
M
M
O
C
F
(
y
c
n
e
u
q
e
r
F
g
n
it
a
r
e
p
O
O
)
4
2
8
0
8
8
-
-
9
4
8
5
1
9
z
H
M
r
e
w
o
P
t
u
p
n
I
0
2
5
m
B
d
P
(
r
e
w
o
P
t
u
p
t
u
O
X
A
M
)
5
.
4
3
5
3
-
m
B
d
z
H
M
5
1
9
o
t
4
2
8
=
q
e
r
F
r
e
w
o
P
t
u
p
t
u
O
d
e
d
a
r
g
e
D
0
.
2
3
5
.
2
3
-
m
B
d
V
T
T
A
B
T
,
V
0
.
3
=
C
,
C
5
8
=
P
N
I
m
B
d
0
=
P
@
E
A
P
X
A
M
8
4
5
5
-
%
z
H
M
5
1
9
o
t
4
2
8
=
q
e
r
F
1
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
7
3
-
0
3
-
m
B
d
P
,
W
O
L
=
N
E
_
X
T
N
I
m
B
d
5
=
2
n
o
it
a
l
o
s
I
d
r
a
w
r
o
F
-
5
2
-
0
1
-
m
B
d
V
,
H
G
I
H
=
N
E
_
X
T
P
M
A
R
,
V
2
.
0
=
P
N
I
m
B
d
5
=
n
o
it
a
l
o
s
I
s
s
o
r
C
F
2
(
O
)
t
r
o
p
S
C
P
/
S
C
D
@
-
0
3
-
0
2
-
m
B
d
V
P
M
A
R
V
o
t
V
2
.
0
=
X
A
M
_
P
M
A
R
s
c
i
n
o
m
r
a
H
o
f
2
o
f
3
-
-
7
1
-
0
3
-
5
-
5
1
-
m
B
d
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
y
ti
li
b
a
t
S
-
-
-
-
6
3
-
0
3
-
m
B
d
,
s
e
s
a
h
p
ll
a
1
:
8
=
R
W
S
V
P
T
U
O
<
m
B
d
5
.
4
3
F
T
U
O
z
H
G
1
<
F
T
U
O
z
H
G
1
>
s
s
e
n
d
e
g
g
u
R
-
-
1
:
0
1
P
,
s
e
s
a
h
p
d
a
o
l
ll
A
T
U
O
<
m
B
d
5
.
4
3
r
e
w
o
P
e
s
i
o
N
X
R
-
6
8
-
3
8
-
m
B
d
T
F
X
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
9
4
8
=
F
X
R
,
z
H
M
4
9
8
o
t
9
6
8
=
P
T
U
O
<
m
B
d
5
.
4
3
-
1
8
-
7
7
-
m
B
d
T
F
X
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
1
9
=
F
X
R
,
z
H
M
5
3
9
o
t
5
2
9
=
P
T
U
O
<
m
B
d
5
.
4
3
-
6
8
-
3
8
-
m
B
d
T
F
X
,
z
H
k
0
0
1
=
W
B
R
,
z
H
M
5
1
9
=
F
X
R
,
z
H
M
0
6
9
o
t
5
3
9
=
P
T
U
O
<
m
B
d
5
.
4
3
R
W
S
V
t
u
p
n
I
-
-
1
:
5
.
2
s
l
e
v
e
l
r
e
w
o
p
t
u
p
t
u
o
ll
a
r
e
v
O
PDF 
ZIP