High Performance InGaAs p
-
i
-
n Photodiode
`ST' Active Device Mount
13PD150-ST
The 13PD150-ST, an InGaAs photodiode with a 150
m-diameter photosensitive region
packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for
high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar
semiconductor design and dielectric passivation provide low noise performance. Reliability is
assured by hermetic sealing and a 100% purge burn-in ( 200
o
C, 15 hours, V
r
= 20V ). The ST
receptacle is suitable for bulkhead and PC board mounting.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Test Conditions
Min
Typ
Max Units
Operating Voltage
-
-
-
-20
Volts
Dark Current
-5V
- 0.5 2.5
nA
Capacitance -5V
- 1.5 2.25 pF
Responsivity 1300nm
0.7
0.8 - A/W
Rise/Fall
-
- -
0.5
ns
Absolute Maximum Ratings
Reverse Voltage
20 Volts
Forward Current
5 mA
Reverse Current
1 mA
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
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