High Performance InGaAs p
-
i
-
n Photodiode
13PD150-S
The 13PD150-S, an InGaAs photodiode with a 150
m photosensitive region mounted on a
metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient
coupling to multi-mode fiber in hybrid modules is enabled by the relatively large photosensitive
area. Planar semiconductor design and dielectric passivation provide low noise performance.
Reliability is assured by a 100% purge burn-in (200
o
C, 15 hours, V
r
= 20V). Chips can also be
attached and wire bonded to customer-supplied or other specified submounts.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics
Parameters
Test Conditions
Min
Typ
Max Units
Operating Voltage
-
-
-
-20
Volts
Dark Current
-5V
-
0.5 2.5
nA
Capacitance
-5V
-
1.25 2
pF
Responsivity
1300nm
0.70
0.90 -
A/W
Rise/Fall
-
-
-
2
ns
Absolute Maximum Ratings
Reverse Voltage
20 Volts
Forward Current
5 mA
Reverse Current
1 mA
Operating Temperature
-40
o
C to + 85
o
C
Storage Temperature
-40
o
C to + 85
o
C
Soldering Temperature
250
o
C
829 Flynn Road, Camarillo, CA 93012 tel (805) 445-4500 fax (805) 445-4502.
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