LP62E16256E-T Series
Preliminary
256K X 16 BIT LOW VOLTAGE CMOS SRAM
PRELIMINARY (July, 2002, Version 0.0)
AMIC Technology, Inc.
Document Title
256K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No. History
Issue Date
Remark
0.0
Initial issue
July 4, 2002
Preliminary
LP62E16256E-T Series
256K X 16 BIT LOW VOLTAGE CMOS SRAM
PRELIMINARY (July, 2002, Version 0.0)
1
AMIC Technology, Inc.
Features
General Description
n
Operating voltage: 1.65V to 2.2V
n
Access times: 70ns (max.)
n
Current:
Very low power version: Operating: 30mA (max.)
Standby:
10
A (max.)
n
Full static operation, no clock or refreshing required
n
All inputs and outputs are directly TTL-compatible
n
Common I/O using three-state output
n
Data retention voltage: 1.2V (min.)
n
Available in 44-pin TSOP and 48-ball CSP packages
The LP62E16256E-T is a low operating current
4,194,304-bit static random access memory organized as
262,144 words by 16 bits and operates on low power
voltage from 1.65V to 2.2V. It is built using AMIC's high
performance CMOS process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage
as low as 1.2V.
Product Family
Power Dissipation
Product Family
Operating
Temperature
VCC Range
Speed
Data Retention
(I
CCDR
, Typ.)
Standby
(I
SB1
, Typ.)
Operating
(I
CC2
, Typ.)
Package
Type
LP62E16256E
-25
C ~ +85
C
1.65V~2.2V
70ns
0.2
A
1.4
A
2mA
44L TSOP
48B CSP
1. Typical values are measured at VCC = 2.0V, T
A
= 25
C and not 100% tested.
2. Data retention current VCC = 1.2V.
Pin Configurations
n
n
TSOP
n
n
CSP (Chip Size Package)
48-pin Top View
I/O
9
I/O
10
GND
VCC
I/O
15
I/O
16
NC
A8
NC
A9
A12
A10
A11
NC
A13
A14
A15
I/O
8
I/O
7
I/O
3
I/O
1
GND
VCC
A0
A3
A5
A6
A4
A1
A2
NC
6
5
4
3
2
1
A
B
C
D
E
F
G
H
I/O
14
I/O
13
I/O
12
I/O
11
A17
NC
A7
A16
I/O
2
I/O
4
I/O
5
I/O
6
LB
HB
WE
OE
CE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A3
A2
A1
A0
CE
I/O
1
I/O
2
I/O
3
I/O
4
VCC
GND
I/O
5
I/O
6
I/O
7
I/O
8
WE
A17
A16
A15
A14
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A11
A10
A9
A8
NC
I/O
9
I/O
10
I/O
11
I/O
12
VCC
GND
I/O
13
I/O
14
I/O
15
I/O
16
LB
HB
OE
A7
A6
LP62E16256EV-T
A13
A5
A4
A12
LP62E16256E-T Series
PRELIMINARY (July, 2002, Version 0.0)
2
AMIC Technology, Inc.
Block Diagram
DECODER
512 X 8192
MEMORY ARRAY
COLUMN I/O
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
VCC
GND
I/O
8
I/O
1
A17
A16
A0
WE
HB
INPUT
DATA
CIRCUIT
I/O
9
I/O
16
LB
OE
CE
Pin Descriptions -- TSOP
Pin No.
Symbol
Description
1 - 5, 18 - 27,
42 - 44
A0 - A17
Address Inputs
6
CE
Chip Enable Input
7 - 10, 13 - 16,
29 - 32, 35 - 38
I/O
1
- I/O
16
Data Inputs/Outputs
17
WE
Write Enable Input
39
LB
Lower Byte Enable Input (I/O
1
to I/O
8
)
40
HB
Higher Byte Enable Input (I/O
9
to I/O
16
)
41
OE
Output Enable Input
11, 33
VCC
Power
12, 34
GND
Ground
28
NC
No Connection
LP62E16256E-T Series
PRELIMINARY (July, 2002, Version 0.0)
3
AMIC Technology, Inc.
Pin Description - CSP
Symbol
Description
Symbol
Description
A0 - A17
Address Inputs
HB
Higher Byte Enable Input
(I/O
9
- I/O
16
)
CE
Chip Enable
OE
Output Enable
I/O
1
- I/O
16
Data Input/Output
VCC
Power Supply
WE
Write Enable Input
GND
Ground
LB
Byte Enable Input
(I/O
1
- I/O
8
)
NC
No Connection
Recommended DC Operating Conditions
(T
A
= -25
C to + 85
C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
1.65
1.8 / 2.0
2.2
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
1.4
-
VCC + 0.2
V
V
IL
Input Low Voltage
-0.2
-
+0.4
V
C
L
Output Load
-
-
30
pF
TTL
Output Load
-
-
1
-
LP62E16256E-T Series
PRELIMINARY (July, 2002, Version 0.0)
4
AMIC Technology, Inc.
Absolute Maximum Ratings*
VCC to GND ..............................................-0.5V to +3.0V
IN, IN/OUT Volt to GND ................... -0.5V to VCC + 0.5V
Operating Temperature, Topr ...................-25
C to +85
C
Storage Temperature, Tstg.....................-55
C to +125
C
Power Dissipation, P
T ......................................................................
0.7W
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposure to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(T
A
= -25
C to + 85
C, VCC = 1.65V to 2.2V, GND = 0V)
Symbol
Parameter
LP62E16256E-70LLT
Unit
Conditions
Min.
Max.
I
LI
Input Leakage Current
-
1
A
V
IN
= GND to VCC
I
LO
Output Leakage Current
-
1
A
CE = V
IH
HB = V
IH
or OE = V
IH
or
WE = V
IH
V
I/O
= GND to VCC
I
CC
Active Power Supply Current
-
5
mA
CE = V
IL
, I
I/O
= 0mA
I
CC1
-
30
mA
* Min. Cycle, Duty = 100%
Dynamic Operating
CE = V
I
, I
I/O
= 0mA
I
CC2
Current
-
10
mA
CE = V
IL
, V
IH
= VCC,
V
IL
= 0V, f = 1MHz,
I
I/O
= 0 mA
I
SB
-
0.5
mA
CE = V
IH
I
SB1
Standby Current
-
10
A
CE
VCC - 0.2V,
V
IN
0V
V
OL
Output Low Voltage
-
0.2
V
I
OL
= 0.1 mA
V
OH
Output High Voltage
1.4
-
V
I
OH
= -0.1 mA
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