12-10-2002
SD4012
DESCRIPTION:
DESCRIPTION:
DESCRIPTION:
DESCRIPTION:
The SD4012 is a gold metallized epitaxial silicon NPN planar
transistor using diffused emitter ballast resistors for superior
ruggedness. The SD4012 can withstand a 30:1 VSWR.
Ideal for military communications applications in the 225 400
MHz frequency range, the SD4012 provides typically 13 dB gain
with 60% collector efficiency.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol Parameter
Value Unit
V
CBO
Collector-Base
Voltage
55
V
V
CEO
Collector-Emitter
Voltage
30
V
V
EBO
Emitter-Base
Voltage
3.5
V
I
C
Device
Current
0.7
A
P
DISS
Power
Dissipation
11
W
T
J
Junction
Temperature
+200
C
T
STG
Storage Temperature
-65 to+150
C
Thermal Data
Thermal Data
Thermal Data
Thermal Data
R
TH(J-C)
Thermal Resistance Junction-case
16.0
C/W
Features
Features
Features
Features
400 MHz
28 VOLTS
P
OUT
= 3 WATTS
G
P
= 11.7 dB GAIN MINIMUM
OVERLAY GEOMETRY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
REFRACTORY/GOLD METALIZATION
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
12-10-2002
SD4012
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25C)
C)
C)
C)
STATIC
STATIC
STATIC
STATIC
Symbol
Test Conditions
Value
Min.
Typ. Max. Unit
BV
CBO
I
C
= 20 mA I
E
= 0mA
55
---
---
V
BV
EBO
I
E
= 5 mA I
C
= 0 mA
3.5
---
---
V
BV
CES
I
C
= 20 mA V
BE
= 0 V
55
---
---
V
BV
CEO
I
C
= 50 mA
I
B
= 0 mA
30
---
---
V
I
CBO
V
CB
= 30 V
I
E
= 0 mA
---
---
1
mA
HFE V
CE
= 5 V
I
C
= 1 A
10
---
150
---
DYNAMIC
DYNAMIC
DYNAMIC
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ. Max.
Unit
P
OUT
f = 400 MHz P
IN
= 0.2 W V
CC
= 28 V
3.0
---
---
W
C
f = 400 MHz P
IN
= 0.2 W V
CC
= 28 V
---
---
---
%
%
%
%
G
P
f = 400 MHz P
IN
= 0.2 W V
CC
= 28 V
11.7
---
---
dB
VSWR
f = 400 MHz P
IN
= 0.2 W V
CC
= 28 V
---
---
30:1
W
C
OB
f = 1 MHz
V
CB
= 28V
---
---
6
W
IMPEDANCE DATA
IMPEDANCE DATA
IMPEDANCE DATA
IMPEDANCE DATA
FREQ
Z
IN
(
)
)
)
)
Z
CL
(
)
)
)
)
300 MHz
0.8 j0.5
33.0 + j57.0
325 MHz
0.9 j0.2
31.0 + j52.0
350 MHz
1.1 + j.25
28.0 + j49.0
375 MHz
1.5 + j.75
26.0 + j46.0
400 MHz
1.9 + j1.0
23.0 + j45.0
425 MHz
2.5 + j0.7
20.0 + j42.0
450 MHz
3.3 + j0.1
17.0 + j36.0
P
OUT
= 3 W
V
CE
= 28 V
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