SD1420-01
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The SD1420-01 is a gold metallized epitaxial silicon NPN planar
transistor designed for high-linearity Class A operation Cellular Base
Station applications. The SD1420-01 is also available in a stud
package as the SD1420.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
40
V
V
CEO
Collector-Emitter Voltage
28
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
.250
A
P
DISS
Power Dissipation
7
W
T
J
Junction Temperature
+ 200
C
T
STG
Storage Temperature
55 to +150
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
20
C/W
Features
Features
860 960 MHz
24 VOLTS
COMMON EMITTER
GOLD METALLIZATION
CLASS A LINEAR OPERATION
P
OUT
= 0.9 W MIN.
9.5 dB GAIN
RF AND MICROWAVE TRANSISTORS
800-900 MHz BASE STATION APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
SD1420-01
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
C)
C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Units
BV
CBO
I
C
= 1 mA
40
V
BV
CEO
I
C
= 1 mA
28
V
BV
EBO
I
E
= 1 mA
3.5
V
I
CES
V
CB
= 24 V
.5
mA
h
FE
V
CE
= 5 V I
C
= .1 A
20
120
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Units
P
OUT
f = 960 MHz V
CE
= 24 V I
CQ
= 200 mA
2.1
W
G
P
f = 960 MHz V
CE
= 24 V I
CQ
= 125 mA
8.9
9.0
dB
C
OB
f = 1 MHz V
CB
= 28 V
5.0
pF
SD1420-01
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
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