MS652.PDF 12-04-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Page 1
MS652/MS652S
RF & MICROWAVE TRANSISTORS
E S C R I P T I O N
E S C R I P T I O N
The MS652/MS652S is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. It withstands severe
mismatch under normal operating conditions.
K E Y F E A T U R E S
K E Y F E A T U R E S
512 MHz
12.5 Volts
Common Emitter
P
OUT
= 5 W Min.
G
P
= 10.0 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
S
UHF Portable/Mobile
Applications
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
36
V
V
CEO
Collector-Emitter Voltage
16
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
2
A
P
DISS
Power Dissipation
25
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-65 to +150
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
7
C/W
MS652
MS652S
MS652.PDF 12-04-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Page 2
MS652/MS652S
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25
C)
MS652S
Symbol
Test Conditions
Min.
Typ.
Max.
Units
BV
CES
I
C
= 25
mA
V
BE
=
0
36
V
BV
CEO
I
C
=
50 mA
I
B
=
0
16
V
BV
CBO
I
C
= 25
mA
I
E
=
0
36
V
BV
EBO
I
E
=
5 mA
I
C
=
0
4.0
V
I
CES
V
CE
=
15 V
V
BE
=
0
1.0
mA
h
FE
V
CE
=
5 V
I
C
=
200 mA
10
150
DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25
C)
MS652S
Symbol
Test Conditions
Min.
Typ.
Max.
Units
P
OUT
f = 512 MHz
V
CC
=
12.5 V
5
W
G
P
f = 512 MHz
V
CC
=
12.5 V
10
dB
f = 512 MHz
V
CC
=
12.5 V P
OUT
= 5 W
60
%
C
OB
f = 1 MHz
V
CB
=
15 V
15
pF
LARGE SIGNAL IMPEDANCE DATA
Frequency
MHz
Z
IN
Z
CL
Units
400
1.2 + j0.6
6.5 + j6.5
440
1.2 + j0.9
7.2 + j6.0
470
1.2 + j1.2
7.7 + j5.3
512
1.2 + j1.5
8.3 + j4.5
Conditions Vcc = 12.5V, Pout = 5W
MS652.PDF 12-04-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Page 3
MS652/MS652S
RF & MICROWAVE TRANSISTORS
TEST CIRCUIT
MS652.PDF 12-04-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Page 4
MS652/MS652S
RF & MICROWAVE TRANSISTORS
PACKAGE OUTLINE
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