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Электронный компонент: MS1011

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MS1011
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS1011 is a 50 V epitaxial silicon NPN planar transistor
designed primarily for SSB and VHF communications. This device
utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
110
V
V
CEO
Collector-Emitter Voltage
55
V
V
EBO
Emitter-Base Voltage
4
V
I
C
Device Current
40
A
P
DISS
Power Dissipation
330
W
T
J
Junction Temperature
+200

C
T
STG
Storage Temperature
65 to +150

C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
0.4

C/W
Features
Features
OPTIMIZED FOR SSB
30 MHz
50 VOLTS
IMD -- 30 dB
GOLD METALLIZATION
COMMON EMITTER
P
OUT
= 250 W PEP WITH 14.5 dB GAIN
RF AND MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855









MS1011
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25

C)
C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Units
BV
CES
I
C
= 200 mA V
BE
= 0 V
110
V
BV
CEO
I
C
= 200 mA I
B
= 0 mA
55
V
BV
EBO
I
E
= 20 mA I
C
= 0 mA
4
V
I
CEO
V
CE
= 30 V I
E
= 0 mA
10
mA
I
CES
V
CE
= 60 V I
E
= 0 mA
10
mA
h
FE
V
CE
= 6 V I
C
= 1.4 A
15
45
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Units
P
OUT
f = 30 MHz V
CE
= 50 V I
CQ
= 150 mA
250
W
G
P *
P
OUT
= 250 W PEP V
CE
= 50 V I
CQ
= 150 mA
14.5
dB
IMD
*
P
OUT
= 250 W PEP V
CE
= 50 V I
CQ
= 150 mA
30
dBc
C *
P
OUT
= 250 W PEP V
CE
= 50 V I
CQ
= 150 mA
37
%
C
OB
f = 1 MHz V
CB
= 50 V
360
PF
Note: Two Tone Method: f
1
= 30.00 MHz; f
2
= 30.001 MHz
In Class C: G
P
Min. 13.5 dB. Efficiency 65% @ 30 MHz
G
P
Min. 10 dB. Efficiency 57% @ 70 MHz









MS1011
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MEC
PACKAGE MECHANICAL DATA
HANICAL DATA