MRF5943C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
DESCRIPTION:
Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and
oscillators.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
C)
Symbol
Parameter
Value
Unit
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Collector Current
400
mA
P
D
Total Device Dissipation
1.0
W
T
STG
Storage Temperature
-65 to +150
C
Thermal Data
R
TH
(
J-C)
Thermal Resistance, Junction Case
125
C/W
1. Emitter
2. Base
3. Collector
TO-39
Features
Maximum Available Gain = 17dB @ 300MHz
High f
T
1.2 GHz typical
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF5943C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25
C)
C)
STATIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BV
CEO
I
C
= 5 ma I
B
= 0
30
-
-
V
BV
CBO
I
C
= 0.1 mA, I
E
= 0
40
-
-
V
BV
EBO
I
E
= 0.1 mA, I
C
= 0
3.5
-
-
V
I
CBO
V
CB
= 15 V, V
BE
= 0 V
-
-
50
A
I
CEO
V
CE
= 20 V, V
BE
= 0 V
-
-
10
A
h
FE
I
C
= 50 mA, V
CE
= 15 V
25
-
300
DYNAMIC
Value
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Ftau
Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
-
1.2
-
GHz
NF
I
C
= 35 mA V
CE
= 15 V f = 200 MHz
-
5.5
-
dB
G
U max
I
C
= 10 mA V
CE
= 15 V f = 200 MHz
-
12
-
dB
MRF5943C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATA
PACKAGE MECHANICAL DATA
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