Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
MDS800
800 Watts, 50 Volts
Pulsed Avionics at 1090 MHz
GENERAL DESCRIPTION
The MDS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1090 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55ST-1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
C
1
1458
W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
) 60
V
Emitter to Base Voltage (BV
ebo
) 3.5
V
Collector Current (I
c
) 60
A
Maximum Temperatures
Storage Temperature
-65 to +200
C
Operating Junction Temperature
+200
C
ELECTRICAL CHARACTERISTICS @ 25
C
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP MAX UNITS
P
out
Power Output
F = 1090 MHz
800
W
P
in
Power
Input
V
cc
= 50 Volts
110
P
g
Power
Gain
Burst width = 128s
8.6
dB
c
Collector Efficiency
LTDF = 2%
40
%
R
L
Return
Loss
-12
dB
P
d
Power
Droop
0.5
dB
VSWR
Load Mismatch Tolerance
1
F = 1090 MHz
4.0:1
FUNCTIONAL CHARACTERISTICS @ 25
C
BV
ebo
Emitter to Base Breakdown
Ie = 30 mA
3.5
V
BV
ces
Collector to Emitter Breakdown Ic = 50 mA
65
V
h
FE
DC Current Gain
Vce = 5V, Ic = 1A
20
jc
1
Thermal Resistance
0.12
C/W
NOTES: 1. At rated output power and pulse conditions
2. 128 s burst, 0.5 s on/0.5 s off, 6.4 ms period
Rev. B Dec 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
MDS800
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