050-4920 Rev C 6-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
g
fs1
/
g
fs2
V
GS
(TH)
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage
1
(I
D
(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Forward Transconductance Match Ratio (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
Gate Threshold Voltage Match (V
DS
= V
GS
, I
D
= 200mA)
MIN
TYP
MAX
500
4
25
250
100
4
6
0.9
1.1
3
5
0.1
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
(each device)
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF473
500
10
30
500
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
C
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
165 V 300 W 150 MHz
The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
Specified 135 Volt, 130 MHz Characteristics:
Output Power = 300 Watts.
Gain = 13dB (Class AB)
Efficiency = 50%
High Performance Push-Pull RF Package.
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Low Thermal Resistance.
ARF473
Common Source
Push-Pull Pair
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
R
JC
R
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.35
0.1
UNIT
C/W
ARF473
G
G
D
S
(Flange)
D
050-4920 Rev C 6-2003
DYNAMIC CHARACTERISTICS (per section)
ARF473
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25C
R
G
= 1.6
MIN
TYP
MAX
1200
1600
140
200
9
12
5.1
10
4.1
8
12.8
20
4.0
8
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
(Push-Pull Configuration)
Symbol
G
PS
Test Conditions
f = 130MHz
I
dq
= 150mA V
DD
= 135V
P
out
= 300W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 5:1
MIN
TYP
MAX
13
14
50
55
UNIT
dB
%
1
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
GAIN (dB)
FREQUENCY (MHz)
Figure 1, Typical Gain vs. Frequency
26
24
22
20
18
16
14
12
10
0
25
50
75
100
125
150
Class AB
V
DD
= 125V
P
out
= 300W
1
5
10
50 100
500
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
TC =+25C
TJ =+200C
SINGLE PULSE
80
10
5
1
1ms
10ms
100us
Per transistor section unless otherwise specified.
DATA FOR BOTH SIDES
IN PARALLEL
OPERATION HERE
LIMITED BY RDS (ON)
DC
100ms
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
3000
1000
500
100
50
10
.1
.5
1
5
10
50
Ciss
Coss
Crss
12
10
8
6
4
2
0
0
1
2
3
4
5
6
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55C
TJ = +125C
TJ = +25C
050-4920 Rev C 6-2003
ARF473
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Z
JC
, THERMAL IMPEDANCE (C/W)
0.4
0.1
0.05
0.01
0.005
0.001
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
9V
T
C
, CASE TEMPERATURE (C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
5.5V
4.5V
4V
5V
VGS=15 & 10V
6V
8V
25
20
15
10
5
0
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
27.12
40.68
63.8
81.36
127.4
4.78 - j 14.3
1.96 - j 9
0.59 - j 4.1
0.31 - j 1.65
0.4 + j 2.66
49 - j 38.8
33.6 - j 39.5
18 - j 33.5
12.3 - j 29
5.5 - j 20.3
Zin - Gate shunted with 100
I
DQ
= 75 mA each side
Z
OL
- Conjugate of optimum load for 300 Watts output at Vdd = 125V
Input and output impedances are measured from gate to gate and
drain to drain respectively
Z
OL
(
)
Zin ()
050-4920 Rev C 6-2003
.435
.225
0.200
0.400
0.390
1.100
1.340
.005
.210
.107
.060
.065 rad 2 PL
Package Dimensions (inches)
1
3
2
4
5
Pin 1. Drain
2. Drain
3. Gate
4. Gate
5. Source
ARF473
HAZARDOUS MATERIAL
WARNING
The ceramic portion of the
device between leads and
mounting flange is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
J1
T1
130V
+
-
L3
DUT
R1
R2
TL3
TL4
TL5
TL6
L1
L2
C1
C2
C3
C4
C5
C10
TL1
TL2
C1 10-80 pF trimmer ARCO 462
C2-4 1000 pF NPO 500V chip
C5-C9 10 nF 500V chip
C10 .47 uF Ceramic 500V
L1 680 nH 12t #24 enam .312" dia
L2 55 nH 3t #18 enam .25" dia
L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2 uH
R1-2 100
0.5 W
T1 4:1 RF transformer on two beads same as L3.
T2 1:1 coax balun. Fair-Rite 2643665902 bead
on 1.5" RG-303 50
teflon coax.
TL1-2 Printed line L=1.2" w=.23"
TL3-4 Printed line L=.25" w=.23"
TL5-6 Printed line L=0.25" w=.23"
0.23" wide stripline on FR-4 board is ~32
Zo
J2
T2
81.36 MHz Test amplifier Po = 500W @130 V
Peak Output Power vs... Vdd
0
100
200
300
400
500
600
700
800
900
80
100
120
140
160
0
0.2
0.4
0.6
0.8
1
1.2
Drain Supply Voltage Vdd
Duty Cycle
Po Watts
Notes:
The value of L2 must be adjusted as the
supply voltage is changed to maintain
resonance in the output circuit. At 81 MHz its
value changes from approximately 50 nH at
100V to 70 nH at 165V.
The duty cycle past 100V must be reduced to
insure power dissipation is within the limits of
the device. Maximum pulse length should be
100mS or less. See figure 7.
Max
Vg1
Vg2
C6
C7
C8
C9
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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