050-4921 Rev A 7-2003
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage
1
(I
D
(ON) = 3A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 3A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN
TYP
MAX
1200
7
25
250
100
3
4
3
5
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF465A/B
1200
1200
6
30
250
0.50
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
300V 150W
60MHz
The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz.
Specified 300 Volt, 40.68 MHz Characteristics:
Output Power = 150 Watts.
Gain = 13dB (Class C)
Efficiency = 75%
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
TO-247
ARF465A
ARF465B
G
D
S
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-4921 Rev A 7-2003
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD
= 300V
P
out
= 150W
GAIN (dB)
DYNAMIC CHARACTERISTICS
ARF465A/B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 200V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25C
R
G
= 1.6
MIN
TYP
MAX
1200
1500
80
100
30
50
7
15
5
10
21
34
12
25
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
Test Conditions
f = 40.68 MHz
V
GS
= 0V V
DD
= 300V
P
out
= 150W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 6:1
MIN
TYP
MAX
13
15
70
75
UNIT
dB
%
1
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
10
100
1200
10
8
6
4
2
0
0
1
2
3
4
5
6
7
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10,000
5000
1000
500
100
50
10
0.1
1
10
100
300
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55C
TJ = +125C
TJ = +25C
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
24
10
5
1
.5
.1
1mS
10mS
DC
100uS
25
20
15
10
5
0
10 20
30
40
50 60
70
80 90 100
050-4921 Rev A 7-2003
T
C
, CASE TEMPERATURE (C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
ARF465A/B
5.5V
4.5V
5V
6V
VGS=15V, 10V, 7V
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
6.5V
10
8
6
4
2
0
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin (
)
Z
OL
(
)
2.0
13.5
27
40
65
21.4 -j 8.7
2.6 -j 7.3
.54 -j 2.9
.22 -j .69
.31 +j 1.65
206 -j 45
68 -j 99
22 -j 64
10.5 -j 44
4.4 -j 27
Zin - Gate shunted with 25
I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 150 Watts output at Vdd = 300V
SINGLE PULSE
0.5
0.1
0.3
0.7
0.9
0.05
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
0.60
0.50
0.40
0.30
0.20
0.10
0
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0284
0.165
0.307
0.00155F
0.00934F
0.128F
Power
(Watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
050-4921 Rev A 7-2003
TO-247 Package Outline
ARF465A/B
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Source
2-Plcs.
Top View
ARF - A
Device
ARF - B
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
L1
L2
C1
R2
R1
DUT
L3
L4
C3
C4
C7
C6
C2
C8
C9
L5
300V
+
-
RF
Output
RF
Input
40.68 MHz Test Circuit
+
-
Bias
0 - 6V
C1 - 1000pF 100V chip ATC 700B
C2-C5 - Arco 463 Mica trimmer
C6-C8 - .01
F 500V ceramic chip
C9 - 2200 pF COG 500 V chip
L1 - 4t #20 AWG .25"ID .3"L ~110 nH
L2 - 2t #20 AWG .25"ID .3"L ~ 25 nH
L3-- 4t #16 AWG .4" ID .5"L ~290 nH
L4 -- 25t #24 AWG .35"ID ~2uH
L5-- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF465A/B
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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