APTM50SKM17
A
P
T
M
50S
K
M
17 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
1 6
OUT
G1
S1
0/VBUS
VBUS
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
500
V
T
c
= 25C
180
I
D
Continuous Drain Current
T
c
= 80C
135
I
DM
Pulsed Drain current
720
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
17
m
W
P
D
Maximum Power Dissipation
T
c
= 25C
1250
W
I
AR
Avalanche current (repetitive and non repetitive)
51
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 500V
R
DSon
= 17m
W max @ Tj = 25C
I
D
= 180A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7
MOSFETs
- Low
R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very
rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical
design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Buck chopper
MOSFET Power Module
APTM50SKM17
A
P
T
M
50S
K
M
17 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 500A
500
V
V
GS
= 0V,V
DS
= 500V
T
j
= 25C
200
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 400V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 90A
17
m
W
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 10mA
3
5
V
I
GSS
Gate Source Leakage Current
V
GS
= 30 V, V
DS
= 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
28
C
oss
Output
Capacitance
5.6
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.36
nF
Q
g
Total gate Charge
560
Q
gs
Gate Source Charge
160
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 180A
280
nC
T
d(on)
Turn-on Delay Time
21
T
r
Rise Time
38
T
d(off)
Turn-off Delay Time
75
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 333V
I
D
= 180A
R
G
= 0.5
W
93
ns
E
on
Turn-on Switching Energy
u
4140
E
off
Turn-off Switching Energy
v
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 333V
I
D
= 180A,
R
G
= 0.5
3380
J
E
on
Turn-on Switching Energy
u
6224
E
off
Turn-off Switching Energy
v
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 333V
I
D
= 180A,
R
G
= 0.5
4052
J
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(AV)
Maximum Average Forward Current
50% duty cycle
T
c
= 70C
180
A
I
F
= 180A
1.6
1.8
I
F
= 360A
1.9
V
F
Diode Forward Voltage
I
F
= 180A
T
j
= 125C
1.4
V
T
j
= 25C
130
t
rr
Reverse Recovery Time
I
F
= 180A
V
R
= 400V
di/dt = 600A/s
T
j
= 125C
170
ns
T
j
= 25C
660
Q
rr
Reverse Recovery Charge
I
F
= 180A
V
R
= 400V
di/dt = 600A/s
T
j
= 125C
2760
nC
u E
on
includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APTM50SKM17
A
P
T
M
50S
K
M
17 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.1
R
thJC
Junction
to
Case
Diode
0.32
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage
Temperature
Range
-40 125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For
terminals M5 2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM50SKM17
A
P
T
M
50S
K
M
17 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l Im
p
e
d
a
n
c
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
8V
0
200
400
600
800
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
, Dra
i
n
Cu
rre
n
t
(A)
V
GS
=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
100
200
300
400
500
600
0
2
4
6
8
V
GS
, Gate to Source Voltage (V)
I
D
, Dra
i
n
Cu
rre
n
t
(A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
50
100
150
200
250
I
D
, Drain Current (A)
R
DS
(
o
n)
D
r
ai
n t
o
So
ur
c
e
O
N
R
e
si
st
a
n
c
e
Normalized to
V
GS
=10V @ 90A
0
20
40
60
80
100
120
140
160
180
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC Dra
i
n
Cu
rre
n
t (A)
DC Drain Current vs Case Temperature
APTM50SKM17
A
P
T
M
50S
K
M
17 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
5 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
Breakdown Voltage vs Temperature
BV
DS
S
,
D
r
ai
n t
o
S
o
ur
c
e
B
r
ea
kd
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n)
,
D
r
a
i
n
t
o
S
o
u
r
ce
O
N
r
esi
st
a
n
c
e
(No
r
m
a
l
i
z
e
d
)
V
GS
=10V
I
D
=90A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
T
h
r
e
sh
ol
d
Vo
lt
a
g
e
(No
r
m
a
l
i
z
e
d
)
Maximum Safe Operating Area
10 ms
1 ms
100 us
100 ms
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
, Dra
i
n
Cu
rre
n
t (A)
limited by R
DSon
Single pulse
T
J
=150C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C,
Ca
p
a
c
i
ta
n
c
e
(p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=100V
V
DS
=250V
V
DS
=400V
0
2
4
6
8
10
12
14
0
100 200 300 400 500 600 700
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce
V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=180A
T
J
=25C
APTM50SKM17
A
P
T
M
50S
K
M
17 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
40
80
120
160
200
240
280
I
D
, Drain Current (A)
t
d(
on)
an
d t
d(
of
f
)
(n
s
)
V
DS
=333V
R
G
=0.5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
40
80
120
160
200
240
280
I
D
, Drain Current (A)
t
r
an
d t
f
(n
s
)
V
DS
=333V
R
G
=0.5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
10
12
40
80
120
160
200
240
280
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g E
n
er
g
y
(
m
J)
V
DS
=333V
R
G
=0.5
T
J
=125C
L=100H
E
on
E
off
0
4
8
12
16
20
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=180A
T
J
=125C
L=100H
0
50
100
150
200
250
300
350
400
450
20
40
60
80 100 120 140 160
I
D
, Drain Current (A)
F
r
eq
ue
nc
y (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=0.5
T
J
=125C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
, Re
v
e
rs
e
Dra
i
n
Cu
rre
n
t
(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP