APTM50DSKM65T3
A
P
T
M
50D
S
K
M
65T
3 R
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v 0 S
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pt
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2004
APT website http://www.advancedpower.com
1 6
14
13
Q1
Q2
11
18
22
7
31
29
CR2
16
R1
19
10
23
32
CR1
15
8
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
500
V
T
c
= 25C
51
I
D
Continuous
Drain
Current
T
c
= 80C
38
I
DM
Pulsed Drain current
204
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
65
m
P
D
Maximum Power Dissipation
T
c
= 25C
390
W
I
AR
Avalanche current (repetitive and non repetitive)
51
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 500V
R
DSon
= 65m
max @ Tj = 25C
I
D
= 51A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS 7
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
Dual Buck chopper
MOSFET Power Module
APTM50DSKM65T3
A
P
T
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50D
S
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65T
3 R
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2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250A
500
V
V
GS
= 0V,V
DS
= 500V
T
j
= 25C
250
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 400V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 25.5A
65
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2.5mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30 V, V
DS
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
7000
C
oss
Output
Capacitance
1400
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
90
pF
Q
g
Total gate Charge
140
Q
gs
Gate Source Charge
40
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 51A
70
nC
T
d(on)
Turn-on
Delay
Time
21
T
r
Rise Time
38
T
d(off)
Turn-off Delay Time
75
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 333V
I
D
= 51A
R
G
= 3
93
ns
E
on
Turn-on Switching Energy
1035
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 333V
I
D
= 51A,
R
G
= 3
845
J
E
on
Turn-on Switching Energy
1556
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 333V
I
D
= 51A
,
R
G
= 3
1013
J
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 125C
750
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
T
c
= 70C
60
A
I
F
= 60A
2.2
2.7
I
F
= 120A
2.3
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125C
1.4
V
T
j
= 25C
55
t
rr
Reverse Recovery Time
T
j
= 125C
151
ns
T
j
= 25C
121
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 400V
di/dt=200A/s
T
j
= 125C
999
nC
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
APTM50DSKM65T3
A
P
T
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50D
S
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65T
3 R
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v 0 S
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pt
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m
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2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.32
R
thJC
Junction
to
Case
Diode 0.9
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7
N.m
Wt Package
Weight
110 g
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68 k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTM50DSKM65T3
A
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50D
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65T
3 R
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2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
8V
0
40
80
120
160
200
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
25
50
75
100
125
150
0
2
4
6
8
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
ai
n
C
u
r
r
en
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
10
20
30
40
50
60
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
esi
st
an
ce
Normalized to
V
GS
=10V @ 25.5A
0
10
20
30
40
50
60
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM50DSKM65T3
A
P
T
M
50D
S
K
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65T
3 R
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v 0 S
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pt
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m
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2004
APT website http://www.advancedpower.com
5 6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
Breakdown Voltage vs Temperature
BV
DS
S
,
D
r
a
i
n
t
o
S
o
ur
c
e
B
r
e
a
k
dow
n
V
o
lt
a
g
e
(
N
o
r
m
a
li
z
e
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
= 25.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Thr
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
10 ms
1 ms
100 us
100 ms
0.1
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DSon
Single pulse
T
J
=150C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
pa
c
i
t
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
V
DS
=100V
V
DS
=250V
V
DS
=400V
0
2
4
6
8
10
12
14
0
25
50
75
100 125 150 175
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
So
u
r
c
e
Vo
l
t
a
g
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=51A
T
J
=25C
APTM50DSKM65T3
A
P
T
M
50D
S
K
M
65T
3 R
e
v 0 S
e
pt
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m
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,
2004
APT website http://www.advancedpower.com
6 6
T
J
=25C
T
J
=150C
1
10
100
1000
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n
C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
I
D
, Drain Current (A)
t
d(
on)
a
nd t
d(
o
f
f
)
(n
s
)
V
DS
=333V
R
G
=3
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
10
20
30
40
50
60
70
80
I
D
, Drain Current (A)
t
r
a
nd
t
f
(n
s
)
V
DS
=333V
R
G
=3
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
10
20
30
40
50
60
70
80
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
V
DS
=333V
R
G
=3
T
J
=125C
L=100H
E
on
E
off
0
1
2
3
4
5
0
5
10 15 20 25 30 35 40 45
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
V
DS
=333V
I
D
=51A
T
J
=125C
L=100H
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10
15
20
25
30
35
40
45
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=333V
D=50%
R
G
=3
T
J
=125C
T
C
=75C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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