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Электронный компонент: APTM20TAM16FP

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APTM20TAM16FP
A
P
T
M
20T
A
M
16F
P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
1 6





W
VBUS1
VBUS2
VBUS3
0/VBUS3
V
G5
G6
S5
S6
0/VBUS1
S2
G2
G1
S1
0/VBUS2
U
S3
S4
G3
G4







S5
G5
G6
S6
VBUS 2
0/VBUS 3
VBUS 3
0/VBUS 2
W
V
G4
S4
G3
S3
VBUS 1
0/VBUS 1
S1
G1
S2
G2
U
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
200
V
T
c
= 25C
104
I
D
Continuous
Drain
Current
T
c
= 80C
74
I
DM
Pulsed Drain current
416
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
16
m
P
D
Maximum Power Dissipation
T
c
= 25C
390
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 200V
R
DSon
= 16m
max @ Tj = 25C
I
D
= 104A @ Tc = 25C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control

Features
Power MOS 7
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
Triple phase leg
MOSFET Power Module
APTM20TAM16FP
A
P
T
M
20T
A
M
16F
P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250A
200
V
V
GS
= 0V,V
DS
= 200V
T
j
= 25C
250
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 160V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 52A
16
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2.5mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
7220
C
oss
Output
Capacitance
2330
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
146
pF
Q
g
Total gate Charge
140
Q
gs
Gate Source Charge
53
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
=104A
67
nC
T
d(on)
Turn-on
Delay
Time
32
T
r
Rise Time
64
T
d(off)
Turn-off Delay Time
88
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 133V
I
D
= 104A
R
G
= 5
116
ns
E
on
Turn-on Switching Energy
849
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 133V
I
D
= 104A,
R
G
= 5
929
J
E
on
Turn-on Switching Energy
936
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 133V
I
D
= 104A,
R
G
= 5
986
J

Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
104
I
S
Continuous Source current
(Body diode)
Tc = 80C
74
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 104A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
T
j
= 25C
230
t
rr
Reverse Recovery Time
I
S
= - 104A
V
R
= 133V
di
S
/dt = 100A/s
T
j
= 125C
450
ns
T
j
= 25C
0.9
Q
rr
Reverse Recovery Charge
I
S
= - 104A
V
R
= 133V
di
S
/dt = 100A/s
T
j
= 125C
3.4
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 104A di/dt 700A/s V
R
V
DSS
T
j
150C
APTM20TAM16FP
A
P
T
M
20T
A
M
16F
P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
IGBT
0.32 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
5 places (3:1)
APTM20TAM16FP
A
P
T
M
20T
A
M
16F
P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l
I
m
pe
da
nc
e

(

C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
V
GS
=15V
9V
0
50
100
150
200
250
300
350
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n

Cu
r
r
e
n
t

(
A
)
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9 10
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
25
50
75
100
125
150
I
D
, Drain Current (A)
R
DS
(
o
n
)

D
r
ai
n
t
o
S
o
u
r
ce O
N

R
e
s
i
st
an
ce
Normalized to
V
GS
=10V @ 52A
0
20
40
60
80
100
120
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n

Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM20TAM16FP
A
P
T
M
20T
A
M
16F
P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
5 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
a
i
n
t
o
S
o
u
r
c
e
B
r
e
a
k
dow
n
Vo
l
t
a
g
e
(
No
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
D
S
(
o
n
)
,
D
r
ai
n

t
o
S
o
u
r
ce O
N

r
esi
s
t
an
ce
(N
o
r
ma
l
i
z
e
d
)
V
GS
=10V
I
D
= 52A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Thr
e
s
h
ol
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
, D
r
a
i
n

C
u
r
r
e
n
t
(
A
)
Single pulse
T
J
=150C
limited by
R
DSon
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=40V
V
DS
=100V
V
DS
=160V
0
2
4
6
8
10
12
14
0
20
40
60
80 100 120 140 160
Gate Charge (nC)
V
GS
,
G
a
t
e

t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=104A
T
J
=25C
APTM20TAM16FP
A
P
T
M
20T
A
M
16F
P
R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0
25
50
75
100 125 150 175
I
D
, Drain Current (A)
t
d(
o
n
)
an
d
t
d(o
ff)
(n
s
)
V
DS
=133V
R
G
=5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
25
50
75
100 125 150 175
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=133V
R
G
=5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
0
25
50
75
100 125 150 175
I
D
, Drain Current (A)
E
on
an
d
E
of
f
(mJ
)
V
DS
=133V
R
G
=5
T
J
=125C
L=100H
E
on
E
off
0.5
1
1.5
2
2.5
3
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
En
e
r
g
y

(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=104A
T
J
=125C
L=100H
0
50
100
150
200
250
300
25
38
50
63
75
88
100
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=133V
D=50%
R
G
=5
T
J
=125C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t

(
A
)
Source to Drain Diode Forward Voltage


APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.