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Электронный компонент: APTM20HM08F

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APTM20HM08F
A
P
T
M
20H
M
08F
R
e
v 1

M
a
y,
2004
APT website http://www.advancedpower.com
1 6







S4
G4
G2
S2
VBUS
0/VBUS
S1
G1
S3
OUT1
OUT2
G3

Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
200
V
T
c
= 25C
208
I
D
Continuous Drain Current
T
c
= 80C
155
I
DM
Pulsed Drain current
832
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
8
m
W
P
D
Maximum Power Dissipation
T
c
= 25C
781
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 200V
R
DSon
= 8m
W max @ Tj = 25C
I
D
= 208A @ Tc = 25C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control

Features
Power MOS 7
FREDFETs
- Low
R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very
rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical
design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Full - Bridge
MOSFET Power Module
APTM20HM08F
A
P
T
M
20H
M
08F
R
e
v 1

M
a
y,
2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 375A
200
V
V
GS
= 0V,V
DS
= 200V
T
j
= 25C
375
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 160V
T
j
= 125C
1500
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 104A
8
m
W
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 5mA
3
5
V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
150
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
14.4
C
oss
Output
Capacitance
4.6
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.3
nF
Q
g
Total gate Charge
280
Q
gs
Gate Source Charge
106
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
= 208A
134
nC
T
d(on)
Turn-on Delay Time
32
T
r
Rise Time
64
T
d(off)
Turn-off Delay Time
88
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 133V
I
D
= 208A
R
G
= 2.5
W
116
ns
E
on
Turn-on Switching Energy
u
1698
E
off
Turn-off Switching Energy
v
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 133V
I
D
= 208A,
R
G
= 2.5
1858
J
E
on
Turn-on Switching Energy
u
1872
E
off
Turn-off Switching Energy
v
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 133V
I
D
= 208A, R
G
= 2.5
1972
J

Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
208
I
S
Continuous Source current
(Body diode)
Tc = 80C
155
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 208A
1.3
V
dv/dt Peak Diode Recovery
w
5
V/ns
T
j
= 25C
230
t
rr
Reverse Recovery Time
I
S
= -208A
V
R
= 133V
di
S
/dt = 200A/s
T
j
= 125C
450
ns
T
j
= 25C
1.8
Q
rr
Reverse Recovery Charge
I
S
= -208A
V
R
= 133V
di
S
/dt = 200A/s
T
j
= 125C
6.8
C
u E
on
includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 208A di/dt 700A/s V
R
V
DSS
T
j
150C
APTM20HM08F
A
P
T
M
20H
M
08F
R
e
v 1

M
a
y,
2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.16
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage
Temperature
Range
-40 125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g

Package outline
APTM20HM08F
A
P
T
M
20H
M
08F
R
e
v 1

M
a
y,
2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l
I
m
pe
da
nc
e
(

C
/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
V
GS
=15V
9V
0
100
200
300
400
500
600
700
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dra
i
n
Cu
rre
n
t

(A)
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9 10
V
GS
, Gate to Source Voltage (V)
I
D
, Dra
i
n
Cu
rre
n
t

(A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
50
100
150
200
250
300
I
D
, Drain Current (A)
R
D
S
(
on)
D
r
ai
n t
o
S
o
ur
c
e
O
N

R
e
si
st
a
n
c
e
Normalized to
V
GS
=10V @ 104A
0
50
100
150
200
250
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC Dra
i
n
Cu
rre
n
t
(A)
DC Drain Current vs Case Temperature
APTM20HM08F
A
P
T
M
20H
M
08F
R
e
v 1

M
a
y,
2004
APT website http://www.advancedpower.com
5 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
c
e
B
r
ea
kd
ow
n
Vo
lt
a
g
e
(
No
rm
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
D
S
(
o
n)
,
D
r
a
i
n
t
o
S
o
u
r
ce
O
N
r
e
si
st
a
n
c
e
(No
r
m
a
l
i
z
e
d
)
V
GS
=10V
I
D
= 104A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
T
h
r
e
sh
ol
d
Vo
lt
a
g
e
(No
r
m
a
l
i
z
e
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dra
i
n
Cu
rre
n
t
(A)
Single pulse
T
J
=150C
limited by
R
DSon
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C, Ca
p
a
c
i
ta
n
c
e
(p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=40V
V
DS
=100V
V
DS
=160V
0
2
4
6
8
10
12
14
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
V
GS
,

G
a
t
e
t
o
S
o
u
r
ce
V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=208A
T
J
=25C
APTM20HM08F
A
P
T
M
20H
M
08F
R
e
v 1

M
a
y,
2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0
50
100 150 200 250 300 350
I
D
, Drain Current (A)
t
d(
on)
an
d t
d(
of
f
)
(n
s
)
V
DS
=133V
R
G
=2.5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
50
100 150 200 250 300 350
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=133V
R
G
=2.5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
0
50
100 150 200 250 300 350
I
D
, Drain Current (A)
E
on
an
d E
of
f
(m
J
)
V
DS
=133V
R
G
=2.5
T
J
=125C
L=100H
E
on
E
off
1
2
3
4
5
6
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=208A
T
J
=125C
L=100H
0
50
100
150
200
250
300
25
50
75
100 125 150 175 200
I
D
, Drain Current (A)
F
r
eq
ue
nc
y (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=133V
D=50%
R
G
=2.5
T
J
=125C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
Re
v
e
rs
e
Dra
i
n
Cu
rre
n
t
(A)
Source to Drain Diode Forward Voltage


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