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Электронный компонент: APTM20DAM04

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APTM20DAM04
A
P
T
M
20D
A
M
04 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
1 6





OUT
0/VBUS
VBUS
G2
S2

Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
200
V
T
c
= 25C
372
I
D
Continuous Drain Current
T
c
= 80C
278
I
DM
Pulsed Drain current
1488
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
4
m
W
P
D
Maximum Power Dissipation
T
c
= 25C
1250
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 200V
R
DSon
= 4m
W max @ Tj = 25C
I
D
= 372A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction

Features
Power MOS 7
MOSFETs
- Low
R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very
rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical
design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Boost chopper
MOSFET Power Module
APTM20DAM04
A
P
T
M
20D
A
M
04 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 500A
200
V
V
GS
= 0V,V
DS
= 200V
T
j
= 25C
200
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 160V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 186A
4
m
W
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 10mA
3
5
V
I
GSS
Gate Source Leakage Current
V
GS
= 30 V, V
DS
= 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
28.9
C
oss
Output
Capacitance
9.32
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.58
nF
Q
g
Total gate Charge
560
Q
gs
Gate Source Charge
212
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
= 372A
268
nC
T
d(on)
Turn-on Delay Time
32
T
r
Rise Time
64
T
d(off)
Turn-off Delay Time
88
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 133V
I
D
= 372A
R
G
= 1.2
W
116
ns
E
on
Turn-on Switching Energy
u
3396
E
off
Turn-off Switching Energy
v
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 133V
I
D
= 372A,
R
G
= 1.2
3716
J
E
on
Turn-on Switching Energy
u
3744
E
off
Turn-off Switching Energy
v
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 133V
I
D
= 372A,
R
G
= 1.2
3944
J

Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(AV)
Maximum Average Forward Current
50% duty cycle
T
c
= 90C
300
A
I
F
= 300A
1
1.1
I
F
= 600A
1.4
V
F
Diode Forward Voltage
I
F
= 300A
T
j
= 125C
0.9
V
T
j
= 25C
60
t
rr
Reverse Recovery Time
I
F
= 300A
V
R
= 133V
di/dt = 600A/s
T
j
= 125C
110
ns
T
j
= 25C
600
Q
rr
Reverse Recovery Charge
I
F
= 300A
V
R
= 133V
di/dt = 600A/s
T
j
= 125C
2520
nC
u E
on
includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APTM20DAM04
A
P
T
M
20D
A
M
04 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.1
R
thJC
Junction
to
Case
Diode
0.22
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage
Temperature
Range
-40 125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For
terminals M5 2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM20DAM04
A
P
T
M
20D
A
M
04 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l
I
m
pe
da
nc
e
(

C
/
W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
V
GS
=15V
9V
0
200
400
600
800
1000
1200
1400
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dra
i
n
Cu
rre
n
t

(A)
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9 10
V
GS
, Gate to Source Voltage (V)
I
D
, Dra
i
n
Cu
rre
n
t

(A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
100
200
300
400
500
600
I
D
, Drain Current (A)
R
D
S
(
on)
D
r
ai
n t
o
S
o
ur
c
e
O
N

R
e
si
st
a
n
c
e
Normalized to
V
GS
=10V @ 186A
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC Dra
i
n
Cu
rre
n
t
(A)
DC Drain Current vs Case Temperature
APTM20DAM04
A
P
T
M
20D
A
M
04 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
5 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
c
e
B
r
ea
kd
ow
n
Vo
lt
a
g
e
(
No
rm
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
D
S
(
o
n)
,
D
r
a
i
n
t
o
S
o
u
r
ce
O
N
r
e
si
st
a
n
c
e
(No
r
m
a
l
i
z
e
d
)
V
GS
=10V
I
D
= 186A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
T
h
r
e
sh
ol
d
Vo
lt
a
g
e
(No
r
m
a
l
i
z
e
d
)
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
10000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dra
i
n
Cu
rre
n
t
(A)
Single pulse
T
J
=150C
limited by
R
DSon
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C, Ca
p
a
c
i
ta
n
c
e
(p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=40V
V
DS
=100V
V
DS
=160V
0
2
4
6
8
10
12
14
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
V
GS
,

G
a
t
e
t
o
S
o
u
r
ce
V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=372A
T
J
=25C
APTM20DAM04
A
P
T
M
20D
A
M
04 R
e
v 1
M
a
y,
2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0
100
200
300
400
500
600
I
D
, Drain Current (A)
t
d(
on)
an
d t
d(
of
f
)
(n
s
)
V
DS
=133V
R
G
=1.2
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
I
D
, Drain Current (A)
t
r
an
d t
f
(n
s
)
V
DS
=133V
R
G
=1.2
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
0
100
200
300
400
500
600
I
D
, Drain Current (A)
E
on
an
d E
of
f
(m
J
)
V
DS
=133V
R
G
=1.2
T
J
=125C
L=100H
E
on
E
off
2
4
6
8
10
12
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=372A
T
J
=125C
L=100H
0
50
100
150
200
250
300
350
50
100
150
200
250
300
350
I
D
, Drain Current (A)
F
r
eq
ue
nc
y (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=133V
D=50%
R
G
=1.2
T
J
=125C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
Re
v
e
rs
e
Dra
i
n
Cu
rre
n
t
(A)
Source to Drain Diode Forward Voltage


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