APTM120U100S-AlN
A
P
T
M
120U
100S
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 6
D
Q1
G
S
CR1
SK
D
S
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1200
V
T
c
= 25C
116
I
D
Continuous
Drain
Current
T
c
= 80C
86
I
DM
Pulsed Drain current
464
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
100
m
P
D
Maximum Power Dissipation
T
c
= 25C
3290
W
I
AR
Avalanche current (repetitive and non repetitive)
24
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3200
mJ
V
DSS
= 1200V
R
DSon
= 100m
max @ Tj = 25C
I
D
= 116A @ Tc = 25C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
Series & parallel diodes
MOSFET Power Module
APTM120U100S-AlN
A
P
T
M
120U
100S
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 1mA
1200
V
V
GS
= 0V,V
DS
= 1200V
T
j
= 25C
1
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 1000V
T
j
= 125C
4
mA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 58A
100
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
20mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
28.9
C
oss
Output
Capacitance
4.4
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.8
nF
Q
g
Total gate Charge
1100
Q
gs
Gate Source Charge
128
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 600V
I
D
= 116A
716
nC
T
d(on)
Turn-on
Delay
Time
20
T
r
Rise Time
17
T
d(off)
Turn-off Delay Time
245
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 800V
I
D
= 116A
R
G
=1.2
62
ns
E
on
Turn-on Switching Energy
5
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 800V
I
D
= 116A,
R
G
= 1.2
4.6
mJ
E
on
Turn-on Switching Energy
9.2
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 800V
I
D
= 116A,
R
G
= 1.2
5.6
mJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(A V)
Maximum Average Forward Current
50% duty cycle
T
c
= 85C
120 A
I
F
= 120A
1.1
1.15
I
F
= 240A
1.4
V
F
Diode Forward Voltage
I
F
= 120A
T
j
= 125C
0.9
V
T
j
= 25C
31
t
rr
Reverse Recovery Time
I
F
= 120A
V
R
= 133V
di/dt = 400A/s
T
j
= 125C
60
ns
T
j
= 25C
120
Q
rr
Reverse Recovery Charge
I
F
= 120A
V
R
= 133V
di/dt = 400A/s
T
j
= 125C
500
nC
APTM120U100S-AlN
A
P
T
M
120U
100S
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(A V)
Maximum Average Forward Current
50% duty cycle
T
c
= 70C
180 A
I
F
= 180A
2
2.5
I
F
= 360A
2.3
V
F
Diode Forward Voltage
I
F
= 180A
T
j
= 125C
1.8
V
T
j
= 25C
400
t
rr
Reverse Recovery Time
I
F
= 180A
V
R
= 800V
di/dt = 600A/s
T
j
= 125C
470
ns
T
j
= 25C
3.6
Q
rr
Reverse Recovery Charge
I
F
= 180A
V
R
= 800V
di/dt = 600A/s
T
j
= 125C
12
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.038
Series diode
0.46
R
thJC
Junction
to
Case
Parallel
diode
0.32
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM120U100S-AlN
A
P
T
M
120U
100S
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4.5V
5V
5.5V
6V
7V
0
40
80
120
160
200
240
280
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
40
80
120
160
200
240
280
320
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
40
80
120
160
200
240
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 58A
0
20
40
60
80
100
120
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM120U100S-AlN
A
P
T
M
120U
100S
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=58A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
1200
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=240V
V
DS
=600V
V
DS
=960V
0
2
4
6
8
10
12
14
0
300
600
900
1200
1500
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=116A
T
J
=25C
APTM120U100S-AlN
A
P
T
M
120U
100S
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
50
100
150
200
250
300
30
60
90
120
150
180
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=800V
R
G
=1.2
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
30
60
90
120
150
180
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=800V
R
G
=1.2
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
4
8
12
16
30
60
90
120
150
180
I
D
, Drain Current (A)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
V
DS
=800V
R
G
=1.2
T
J
=125C
L=100H
E
on
E
off
4
8
12
16
20
24
0
2
4
6
8
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=800V
I
D
=116A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
30
50
70
90
110
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=800V
D=50%
R
G
=1.2
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n
C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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